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On the Processes of the Self-Assembly of CdS Nanocrystal Arrays Formed by the Langmuir–Blodgett Technique. / Svit, K. A.; Zhuravlev, K. S.

In: Semiconductors, Vol. 53, No. 11, 01.11.2019, p. 1540-1544.

Research output: Contribution to journal › Article › peer-review

Harvard

Svit, KA & Zhuravlev, KS 2019, 'On the Processes of the Self-Assembly of CdS Nanocrystal Arrays Formed by the Langmuir–Blodgett Technique', Semiconductors, vol. 53, no. 11, pp. 1540-1544. https://doi.org/10.1134/S1063782619110198

APA

Svit, K. A., & Zhuravlev, K. S. (2019). On the Processes of the Self-Assembly of CdS Nanocrystal Arrays Formed by the Langmuir–Blodgett Technique. Semiconductors, 53(11), 1540-1544. https://doi.org/10.1134/S1063782619110198

Vancouver

Svit KA, Zhuravlev KS. On the Processes of the Self-Assembly of CdS Nanocrystal Arrays Formed by the Langmuir–Blodgett Technique. Semiconductors. 2019 Nov 1;53(11):1540-1544. doi: 10.1134/S1063782619110198

Author

Svit, K. A. ; Zhuravlev, K. S. / On the Processes of the Self-Assembly of CdS Nanocrystal Arrays Formed by the Langmuir–Blodgett Technique. In: Semiconductors. 2019 ; Vol. 53, No. 11. pp. 1540-1544.

BibTeX

@article{ef5f27f56116469cb2ed5b90984cec2e,
title = "On the Processes of the Self-Assembly of CdS Nanocrystal Arrays Formed by the Langmuir–Blodgett Technique",
abstract = "The morphology of CdS nanocrystal arrays self-assembled during the evaporation of a behenic-acid organic matrix on a wetted substrate surface is studied by atomic force microscopy. The dependence of the morphology of nanocrystal arrays on the initial matrix surface is studied. The morphology of nanocrystal arrays noticeably changes from small fractal arrays to a porous submonolayer with an increase in the nanocrystal density. The nature of attractive forces between nanocrystals which prevents their reversible adhesion and ensures their comparatively high mobility in the array composition is proposed.",
keywords = "cadmium sulfide, Langmuir–Blodgett technique, nanocrystals, self-assembly",
author = "Svit, {K. A.} and Zhuravlev, {K. S.}",
year = "2019",
month = nov,
day = "1",
doi = "10.1134/S1063782619110198",
language = "English",
volume = "53",
pages = "1540--1544",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "PLEIADES PUBLISHING INC",
number = "11",

}

RIS

TY - JOUR

T1 - On the Processes of the Self-Assembly of CdS Nanocrystal Arrays Formed by the Langmuir–Blodgett Technique

AU - Svit, K. A.

AU - Zhuravlev, K. S.

PY - 2019/11/1

Y1 - 2019/11/1

N2 - The morphology of CdS nanocrystal arrays self-assembled during the evaporation of a behenic-acid organic matrix on a wetted substrate surface is studied by atomic force microscopy. The dependence of the morphology of nanocrystal arrays on the initial matrix surface is studied. The morphology of nanocrystal arrays noticeably changes from small fractal arrays to a porous submonolayer with an increase in the nanocrystal density. The nature of attractive forces between nanocrystals which prevents their reversible adhesion and ensures their comparatively high mobility in the array composition is proposed.

AB - The morphology of CdS nanocrystal arrays self-assembled during the evaporation of a behenic-acid organic matrix on a wetted substrate surface is studied by atomic force microscopy. The dependence of the morphology of nanocrystal arrays on the initial matrix surface is studied. The morphology of nanocrystal arrays noticeably changes from small fractal arrays to a porous submonolayer with an increase in the nanocrystal density. The nature of attractive forces between nanocrystals which prevents their reversible adhesion and ensures their comparatively high mobility in the array composition is proposed.

KW - cadmium sulfide

KW - Langmuir–Blodgett technique

KW - nanocrystals

KW - self-assembly

UR - http://www.scopus.com/inward/record.url?scp=85074755887&partnerID=8YFLogxK

U2 - 10.1134/S1063782619110198

DO - 10.1134/S1063782619110198

M3 - Article

AN - SCOPUS:85074755887

VL - 53

SP - 1540

EP - 1544

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 11

ER -

ID: 22335265