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On the Processes of the Self-Assembly of CdS Nanocrystal Arrays Formed by the Langmuir–Blodgett Technique. / Svit, K. A.; Zhuravlev, K. S.
в: Semiconductors, Том 53, № 11, 01.11.2019, стр. 1540-1544.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - On the Processes of the Self-Assembly of CdS Nanocrystal Arrays Formed by the Langmuir–Blodgett Technique
AU - Svit, K. A.
AU - Zhuravlev, K. S.
PY - 2019/11/1
Y1 - 2019/11/1
N2 - The morphology of CdS nanocrystal arrays self-assembled during the evaporation of a behenic-acid organic matrix on a wetted substrate surface is studied by atomic force microscopy. The dependence of the morphology of nanocrystal arrays on the initial matrix surface is studied. The morphology of nanocrystal arrays noticeably changes from small fractal arrays to a porous submonolayer with an increase in the nanocrystal density. The nature of attractive forces between nanocrystals which prevents their reversible adhesion and ensures their comparatively high mobility in the array composition is proposed.
AB - The morphology of CdS nanocrystal arrays self-assembled during the evaporation of a behenic-acid organic matrix on a wetted substrate surface is studied by atomic force microscopy. The dependence of the morphology of nanocrystal arrays on the initial matrix surface is studied. The morphology of nanocrystal arrays noticeably changes from small fractal arrays to a porous submonolayer with an increase in the nanocrystal density. The nature of attractive forces between nanocrystals which prevents their reversible adhesion and ensures their comparatively high mobility in the array composition is proposed.
KW - cadmium sulfide
KW - Langmuir–Blodgett technique
KW - nanocrystals
KW - self-assembly
UR - http://www.scopus.com/inward/record.url?scp=85074755887&partnerID=8YFLogxK
U2 - 10.1134/S1063782619110198
DO - 10.1134/S1063782619110198
M3 - Article
AN - SCOPUS:85074755887
VL - 53
SP - 1540
EP - 1544
JO - Semiconductors
JF - Semiconductors
SN - 1063-7826
IS - 11
ER -
ID: 22335265