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On Raman scattering cross section ratio of crystalline and microcrystalline to amorphous silicon. / Zhigunov, D. M.; Kamaev, G. N.; Kashkarov, P. K. et al.

In: Applied Physics Letters, Vol. 113, No. 2, 023101, 09.07.2018.

Research output: Contribution to journal › Article › peer-review

Harvard

Zhigunov, DM, Kamaev, GN, Kashkarov, PK & Volodin, VA 2018, 'On Raman scattering cross section ratio of crystalline and microcrystalline to amorphous silicon', Applied Physics Letters, vol. 113, no. 2, 023101. https://doi.org/10.1063/1.5037008

APA

Zhigunov, D. M., Kamaev, G. N., Kashkarov, P. K., & Volodin, V. A. (2018). On Raman scattering cross section ratio of crystalline and microcrystalline to amorphous silicon. Applied Physics Letters, 113(2), [023101]. https://doi.org/10.1063/1.5037008

Vancouver

Zhigunov DM, Kamaev GN, Kashkarov PK, Volodin VA. On Raman scattering cross section ratio of crystalline and microcrystalline to amorphous silicon. Applied Physics Letters. 2018 Jul 9;113(2):023101. doi: 10.1063/1.5037008

Author

Zhigunov, D. M. ; Kamaev, G. N. ; Kashkarov, P. K. et al. / On Raman scattering cross section ratio of crystalline and microcrystalline to amorphous silicon. In: Applied Physics Letters. 2018 ; Vol. 113, No. 2.

BibTeX

@article{9ad9fcf905914fa58be9ff65548ea9f2,
title = "On Raman scattering cross section ratio of crystalline and microcrystalline to amorphous silicon",
abstract = "In this letter, we report on accurate comparative measurements of Raman scattering from bulk crystalline Si and from hydrogenated amorphous Si thin films before and after their pulse laser annealing, performed for the purpose of Si crystalline grain formation. Being accompanied by the respective optical transmittance/reflectance measurements, these data allowed us to estimate the integrated Raman scattering cross section ratios of crystalline and microcrystalline Si to hydrogenated amorphous Si and to compare the results with those known from the literature. For crystalline Si, the obtained ratio is equal to 0.75, while for microcrystalline Si, it is equal to at least 2. Our results are found to contradict the proposed earlier exponential decay dependence of the integrated Raman scattering cross section ratio of microcrystalline to amorphous Si on the crystalline grain size. The physical reasons, which support our findings, are discussed.",
keywords = "OPTICAL-PROPERTIES, POLYCRYSTALLINE SILICON, VOLUME FRACTION, EXCIMER-LASER, THIN-FILMS, SPECTROSCOPY, TEMPERATURE, SI, THICKNESS, HYDROGEN",
author = "Zhigunov, {D. M.} and Kamaev, {G. N.} and Kashkarov, {P. K.} and Volodin, {V. A.}",
note = "Publisher Copyright: {\textcopyright} 2018 Author(s).",
year = "2018",
month = jul,
day = "9",
doi = "10.1063/1.5037008",
language = "English",
volume = "113",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "2",

}

RIS

TY - JOUR

T1 - On Raman scattering cross section ratio of crystalline and microcrystalline to amorphous silicon

AU - Zhigunov, D. M.

AU - Kamaev, G. N.

AU - Kashkarov, P. K.

AU - Volodin, V. A.

N1 - Publisher Copyright: © 2018 Author(s).

PY - 2018/7/9

Y1 - 2018/7/9

N2 - In this letter, we report on accurate comparative measurements of Raman scattering from bulk crystalline Si and from hydrogenated amorphous Si thin films before and after their pulse laser annealing, performed for the purpose of Si crystalline grain formation. Being accompanied by the respective optical transmittance/reflectance measurements, these data allowed us to estimate the integrated Raman scattering cross section ratios of crystalline and microcrystalline Si to hydrogenated amorphous Si and to compare the results with those known from the literature. For crystalline Si, the obtained ratio is equal to 0.75, while for microcrystalline Si, it is equal to at least 2. Our results are found to contradict the proposed earlier exponential decay dependence of the integrated Raman scattering cross section ratio of microcrystalline to amorphous Si on the crystalline grain size. The physical reasons, which support our findings, are discussed.

AB - In this letter, we report on accurate comparative measurements of Raman scattering from bulk crystalline Si and from hydrogenated amorphous Si thin films before and after their pulse laser annealing, performed for the purpose of Si crystalline grain formation. Being accompanied by the respective optical transmittance/reflectance measurements, these data allowed us to estimate the integrated Raman scattering cross section ratios of crystalline and microcrystalline Si to hydrogenated amorphous Si and to compare the results with those known from the literature. For crystalline Si, the obtained ratio is equal to 0.75, while for microcrystalline Si, it is equal to at least 2. Our results are found to contradict the proposed earlier exponential decay dependence of the integrated Raman scattering cross section ratio of microcrystalline to amorphous Si on the crystalline grain size. The physical reasons, which support our findings, are discussed.

KW - OPTICAL-PROPERTIES

KW - POLYCRYSTALLINE SILICON

KW - VOLUME FRACTION

KW - EXCIMER-LASER

KW - THIN-FILMS

KW - SPECTROSCOPY

KW - TEMPERATURE

KW - SI

KW - THICKNESS

KW - HYDROGEN

UR - http://www.scopus.com/inward/record.url?scp=85049845504&partnerID=8YFLogxK

U2 - 10.1063/1.5037008

DO - 10.1063/1.5037008

M3 - Article

AN - SCOPUS:85049845504

VL - 113

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 2

M1 - 023101

ER -

ID: 14727146