Research output: Contribution to journal › Article › peer-review
Nucleation of two-dimensional islands on Si (111) during high-temperature epitaxial growth. / Sitnikov, S. V.; Kosolobov, S. S.; Latyshev, A. V.
In: Semiconductors, Vol. 51, No. 2, 01.02.2017, p. 203-206.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Nucleation of two-dimensional islands on Si (111) during high-temperature epitaxial growth
AU - Sitnikov, S. V.
AU - Kosolobov, S. S.
AU - Latyshev, A. V.
PY - 2017/2/1
Y1 - 2017/2/1
N2 - The process of two-dimensional island nucleation at the surface of ultra large Si (111) during hightemperature epitaxial growth is studied by in situ ultrahigh-vacuum reflection electron microscopy. The critical terrace size Dcrit, at which a two-dimensional island is nucleated in the center, is measured in the temperature range 900–1180°C at different silicon fluxes onto the surface. It is found that the parameter Dcrit 2 is a power function of the frequency of island nucleation, with the exponent χ = 0.9 ± 0.05 in the entire temperature range under study. It is established that the kinetics of nucleus formation is defined by the diffusion of adsorbed silicon atoms at temperatures of up to 1180°C and the minimum critical nucleus size corresponds to 12 silicon atoms.
AB - The process of two-dimensional island nucleation at the surface of ultra large Si (111) during hightemperature epitaxial growth is studied by in situ ultrahigh-vacuum reflection electron microscopy. The critical terrace size Dcrit, at which a two-dimensional island is nucleated in the center, is measured in the temperature range 900–1180°C at different silicon fluxes onto the surface. It is found that the parameter Dcrit 2 is a power function of the frequency of island nucleation, with the exponent χ = 0.9 ± 0.05 in the entire temperature range under study. It is established that the kinetics of nucleus formation is defined by the diffusion of adsorbed silicon atoms at temperatures of up to 1180°C and the minimum critical nucleus size corresponds to 12 silicon atoms.
KW - PHASE-TRANSITION
KW - SUBLIMATION
KW - SURFACES
KW - REM
UR - http://www.scopus.com/inward/record.url?scp=85011865452&partnerID=8YFLogxK
U2 - 10.1134/S106378261702021X
DO - 10.1134/S106378261702021X
M3 - Article
AN - SCOPUS:85011865452
VL - 51
SP - 203
EP - 206
JO - Semiconductors
JF - Semiconductors
SN - 1063-7826
IS - 2
ER -
ID: 10312175