Nucleation of two-dimensional islands on Si (111) during high-temperature epitaxial growth

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Nucleation of two-dimensional islands on Si (111) during high-temperature epitaxial growth. / Sitnikov, S. V.; Kosolobov, S. S.; Latyshev, A. V.

In: Semiconductors, Vol. 51, No. 2, 01.02.2017, p. 203-206.

Research output: Contribution to journal › Article › peer-review

BibTeX

@article{2f7b1231669f4130a8ce199c138db9c0,

title = "Nucleation of two-dimensional islands on Si (111) during high-temperature epitaxial growth",

abstract = "The process of two-dimensional island nucleation at the surface of ultra large Si (111) during hightemperature epitaxial growth is studied by in situ ultrahigh-vacuum reflection electron microscopy. The critical terrace size Dcrit, at which a two-dimensional island is nucleated in the center, is measured in the temperature range 900–1180°C at different silicon fluxes onto the surface. It is found that the parameter Dcrit 2 is a power function of the frequency of island nucleation, with the exponent χ = 0.9 ± 0.05 in the entire temperature range under study. It is established that the kinetics of nucleus formation is defined by the diffusion of adsorbed silicon atoms at temperatures of up to 1180°C and the minimum critical nucleus size corresponds to 12 silicon atoms.",

keywords = "PHASE-TRANSITION, SUBLIMATION, SURFACES, REM",

author = "Sitnikov, {S. V.} and Kosolobov, {S. S.} and Latyshev, {A. V.}",

year = "2017",

month = feb,

day = "1",

doi = "10.1134/S106378261702021X",

language = "English",

volume = "51",

pages = "203--206",

journal = "Semiconductors",

issn = "1063-7826",

publisher = "PLEIADES PUBLISHING INC",

number = "2",

}

RIS

TY - JOUR

T1 - Nucleation of two-dimensional islands on Si (111) during high-temperature epitaxial growth

AU - Sitnikov, S. V.

AU - Kosolobov, S. S.

AU - Latyshev, A. V.

PY - 2017/2/1

Y1 - 2017/2/1

N2 - The process of two-dimensional island nucleation at the surface of ultra large Si (111) during hightemperature epitaxial growth is studied by in situ ultrahigh-vacuum reflection electron microscopy. The critical terrace size Dcrit, at which a two-dimensional island is nucleated in the center, is measured in the temperature range 900–1180°C at different silicon fluxes onto the surface. It is found that the parameter Dcrit 2 is a power function of the frequency of island nucleation, with the exponent χ = 0.9 ± 0.05 in the entire temperature range under study. It is established that the kinetics of nucleus formation is defined by the diffusion of adsorbed silicon atoms at temperatures of up to 1180°C and the minimum critical nucleus size corresponds to 12 silicon atoms.

AB - The process of two-dimensional island nucleation at the surface of ultra large Si (111) during hightemperature epitaxial growth is studied by in situ ultrahigh-vacuum reflection electron microscopy. The critical terrace size Dcrit, at which a two-dimensional island is nucleated in the center, is measured in the temperature range 900–1180°C at different silicon fluxes onto the surface. It is found that the parameter Dcrit 2 is a power function of the frequency of island nucleation, with the exponent χ = 0.9 ± 0.05 in the entire temperature range under study. It is established that the kinetics of nucleus formation is defined by the diffusion of adsorbed silicon atoms at temperatures of up to 1180°C and the minimum critical nucleus size corresponds to 12 silicon atoms.

KW - PHASE-TRANSITION

KW - SUBLIMATION

KW - SURFACES

KW - REM

UR - http://www.scopus.com/inward/record.url?scp=85011865452&partnerID=8YFLogxK

U2 - 10.1134/S106378261702021X

DO - 10.1134/S106378261702021X

M3 - Article

AN - SCOPUS:85011865452

VL - 51

SP - 203

EP - 206

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 2

ER -

ID: 10312175