TY - JOUR

T1 - Nucleation of two-dimensional islands on Si (111) during high-temperature epitaxial growth

AU - Sitnikov, S. V.

AU - Kosolobov, S. S.

AU - Latyshev, A. V.

PY - 2017/2/1

Y1 - 2017/2/1

N2 - The process of two-dimensional island nucleation at the surface of ultra large Si (111) during hightemperature epitaxial growth is studied by in situ ultrahigh-vacuum reflection electron microscopy. The critical terrace size Dcrit, at which a two-dimensional island is nucleated in the center, is measured in the temperature range 900–1180°C at different silicon fluxes onto the surface. It is found that the parameter Dcrit 2 is a power function of the frequency of island nucleation, with the exponent χ = 0.9 ± 0.05 in the entire temperature range under study. It is established that the kinetics of nucleus formation is defined by the diffusion of adsorbed silicon atoms at temperatures of up to 1180°C and the minimum critical nucleus size corresponds to 12 silicon atoms.

AB - The process of two-dimensional island nucleation at the surface of ultra large Si (111) during hightemperature epitaxial growth is studied by in situ ultrahigh-vacuum reflection electron microscopy. The critical terrace size Dcrit, at which a two-dimensional island is nucleated in the center, is measured in the temperature range 900–1180°C at different silicon fluxes onto the surface. It is found that the parameter Dcrit 2 is a power function of the frequency of island nucleation, with the exponent χ = 0.9 ± 0.05 in the entire temperature range under study. It is established that the kinetics of nucleus formation is defined by the diffusion of adsorbed silicon atoms at temperatures of up to 1180°C and the minimum critical nucleus size corresponds to 12 silicon atoms.

KW - PHASE-TRANSITION

KW - SUBLIMATION

KW - SURFACES

KW - REM

UR - http://www.scopus.com/inward/record.url?scp=85011865452&partnerID=8YFLogxK

U2 - 10.1134/S106378261702021X

DO - 10.1134/S106378261702021X

M3 - Article

AN - SCOPUS:85011865452

VL - 51

SP - 203

EP - 206

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 2

ER -