TY - JOUR

T1 - Nanosheet High Mobility SnO2-SnO Complementary TFTs for System-on-Display and Monolithic Three-Dimensional Integrated Circuit

AU - Chin, Albert

AU - Yen, Te Jui

AU - Gritsenko, Vladimir

N1 - Funding Information: Albert Chin and Te Jui Yen would like to acknowledge the support from Ministry of Science and Technology of Taiwan (project no. 110-2221-E-A49-137-MY3). Publisher Copyright: © 2022, John Wiley and Sons Inc. All rights reserved.

PY - 2022

Y1 - 2022

N2 - The top-gate 4.5-nm-thick SnO2 nanosheet nTFT has the high 136 cm2/Vs field-effect mobility (uFE), sharp 1.5x108 on-current/ off-current (ION/IOFF), and fast turn-on subthreshold slope (SS) of 108 mV/decade. The top-gate 7-nm-thick nanosheet SnO pTFT has a high μFE of 4.4 cm2/Vs, large ION/IOFF of 1.2×105, and SS of 526 mV/decade. These CTFTs will enable the system-on-panel (SoP) and Monolithic Three-Dimensional (3D) Integrated Circuit (IC).

AB - The top-gate 4.5-nm-thick SnO2 nanosheet nTFT has the high 136 cm2/Vs field-effect mobility (uFE), sharp 1.5x108 on-current/ off-current (ION/IOFF), and fast turn-on subthreshold slope (SS) of 108 mV/decade. The top-gate 7-nm-thick nanosheet SnO pTFT has a high μFE of 4.4 cm2/Vs, large ION/IOFF of 1.2×105, and SS of 526 mV/decade. These CTFTs will enable the system-on-panel (SoP) and Monolithic Three-Dimensional (3D) Integrated Circuit (IC).

KW - complementary TFTs

KW - high mobility

KW - nanosheet transistor

KW - SnO pTFT

KW - SnO2 nTFT

KW - three-dimensional integrated circuit

UR - http://www.scopus.com/inward/record.url?scp=85141896466&partnerID=8YFLogxK

U2 - 10.1002/sdtp.15959

DO - 10.1002/sdtp.15959

M3 - Conference article

AN - SCOPUS:85141896466

VL - 53

SP - 393

EP - 395

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

SN - 0097-966X

IS - S1

T2 - International Conference on Display Technology, ICDT 2022

Y2 - 9 July 2022 through 12 July 2022

ER -