Результаты исследований: Научные публикации в периодических изданиях › статья по материалам конференции › Рецензирование
Nanosheet High Mobility SnO2-SnO Complementary TFTs for System-on-Display and Monolithic Three-Dimensional Integrated Circuit. / Chin, Albert; Yen, Te Jui; Gritsenko, Vladimir.
в: Digest of Technical Papers - SID International Symposium, Том 53, № S1, 2022, стр. 393-395.Результаты исследований: Научные публикации в периодических изданиях › статья по материалам конференции › Рецензирование
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TY - JOUR
T1 - Nanosheet High Mobility SnO2-SnO Complementary TFTs for System-on-Display and Monolithic Three-Dimensional Integrated Circuit
AU - Chin, Albert
AU - Yen, Te Jui
AU - Gritsenko, Vladimir
N1 - Funding Information: Albert Chin and Te Jui Yen would like to acknowledge the support from Ministry of Science and Technology of Taiwan (project no. 110-2221-E-A49-137-MY3). Publisher Copyright: © 2022, John Wiley and Sons Inc. All rights reserved.
PY - 2022
Y1 - 2022
N2 - The top-gate 4.5-nm-thick SnO2 nanosheet nTFT has the high 136 cm2/Vs field-effect mobility (uFE), sharp 1.5x108 on-current/ off-current (ION/IOFF), and fast turn-on subthreshold slope (SS) of 108 mV/decade. The top-gate 7-nm-thick nanosheet SnO pTFT has a high μFE of 4.4 cm2/Vs, large ION/IOFF of 1.2×105, and SS of 526 mV/decade. These CTFTs will enable the system-on-panel (SoP) and Monolithic Three-Dimensional (3D) Integrated Circuit (IC).
AB - The top-gate 4.5-nm-thick SnO2 nanosheet nTFT has the high 136 cm2/Vs field-effect mobility (uFE), sharp 1.5x108 on-current/ off-current (ION/IOFF), and fast turn-on subthreshold slope (SS) of 108 mV/decade. The top-gate 7-nm-thick nanosheet SnO pTFT has a high μFE of 4.4 cm2/Vs, large ION/IOFF of 1.2×105, and SS of 526 mV/decade. These CTFTs will enable the system-on-panel (SoP) and Monolithic Three-Dimensional (3D) Integrated Circuit (IC).
KW - complementary TFTs
KW - high mobility
KW - nanosheet transistor
KW - SnO pTFT
KW - SnO2 nTFT
KW - three-dimensional integrated circuit
UR - http://www.scopus.com/inward/record.url?scp=85141896466&partnerID=8YFLogxK
U2 - 10.1002/sdtp.15959
DO - 10.1002/sdtp.15959
M3 - Conference article
AN - SCOPUS:85141896466
VL - 53
SP - 393
EP - 395
JO - Digest of Technical Papers - SID International Symposium
JF - Digest of Technical Papers - SID International Symposium
SN - 0097-966X
IS - S1
T2 - International Conference on Display Technology, ICDT 2022
Y2 - 9 July 2022 through 12 July 2022
ER -
ID: 39467158