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Nanoscale potential fluctuations and electron percolation in silicon oxide (SiOx, x = 1.4, 1.6). / Gritsenko, V. A.; Novikov, Yu N.; Chin, A.

In: Materials Research Express, Vol. 6, No. 11, 116409, 27.09.2019.

Research output: Contribution to journal › Article › peer-review

Harvard

Gritsenko, VA, Novikov, YN & Chin, A 2019, 'Nanoscale potential fluctuations and electron percolation in silicon oxide (SiOx, x = 1.4, 1.6)', Materials Research Express, vol. 6, no. 11, 116409. https://doi.org/10.1088/2053-1591/ab4487

APA

Gritsenko, V. A., Novikov, Y. N., & Chin, A. (2019). Nanoscale potential fluctuations and electron percolation in silicon oxide (SiOx, x = 1.4, 1.6). Materials Research Express, 6(11), [116409]. https://doi.org/10.1088/2053-1591/ab4487

Vancouver

Gritsenko VA, Novikov YN, Chin A. Nanoscale potential fluctuations and electron percolation in silicon oxide (SiOx, x = 1.4, 1.6). Materials Research Express. 2019 Sept 27;6(11):116409. doi: 10.1088/2053-1591/ab4487

Author

Gritsenko, V. A. ; Novikov, Yu N. ; Chin, A. / Nanoscale potential fluctuations and electron percolation in silicon oxide (SiOx, x = 1.4, 1.6). In: Materials Research Express. 2019 ; Vol. 6, No. 11.

BibTeX

@article{72038870ab604b2990177cb8d192dc6f,
title = "Nanoscale potential fluctuations and electron percolation in silicon oxide (SiOx, x = 1.4, 1.6)",
abstract = "Using the method of high-resolution x-ray photoelectron spectroscopy (XPS), the short order in the SiO1.4 film was studied. The random bonding (RB) and random mixture (RM) models do not describe the experimental spectra of SiO1.4. The intermediate model (IM) structure of SiO1.4, based on the local spatial fluctuations of the chemical composition, which leads to potential fluctuations for electrons and holes, is proposed. In a wide range of electric fields and temperatures, the current-voltage characteristics of SiOx films (x = 1.4, 1.6) were measured. The Efros-Shklovskii percolation theory was used for the description of SiOx conductance. The percolation energy values for electrons: 0.5 eV for SiO1.4 and 0.8 eV for SiO1.6 were obtained. Taking into account that the potential fluctuation amplitude for electrons is 2.6 eV, the spatial potential fluctuation estimates for them are 2.8 and 3.4 nm for x = 1.4 and 1.6, respectively.",
keywords = "electron percolation, nanoscale potential fluctuations, SiOx film, XPS, TRANSPORT, PHOTOLUMINESCENCE",
author = "Gritsenko, {V. A.} and Novikov, {Yu N.} and A. Chin",
year = "2019",
month = sep,
day = "27",
doi = "10.1088/2053-1591/ab4487",
language = "English",
volume = "6",
journal = "Materials Research Express",
issn = "2053-1591",
publisher = "IOP Publishing Ltd.",
number = "11",

}

RIS

TY - JOUR

T1 - Nanoscale potential fluctuations and electron percolation in silicon oxide (SiOx, x = 1.4, 1.6)

AU - Gritsenko, V. A.

AU - Novikov, Yu N.

AU - Chin, A.

PY - 2019/9/27

Y1 - 2019/9/27

N2 - Using the method of high-resolution x-ray photoelectron spectroscopy (XPS), the short order in the SiO1.4 film was studied. The random bonding (RB) and random mixture (RM) models do not describe the experimental spectra of SiO1.4. The intermediate model (IM) structure of SiO1.4, based on the local spatial fluctuations of the chemical composition, which leads to potential fluctuations for electrons and holes, is proposed. In a wide range of electric fields and temperatures, the current-voltage characteristics of SiOx films (x = 1.4, 1.6) were measured. The Efros-Shklovskii percolation theory was used for the description of SiOx conductance. The percolation energy values for electrons: 0.5 eV for SiO1.4 and 0.8 eV for SiO1.6 were obtained. Taking into account that the potential fluctuation amplitude for electrons is 2.6 eV, the spatial potential fluctuation estimates for them are 2.8 and 3.4 nm for x = 1.4 and 1.6, respectively.

AB - Using the method of high-resolution x-ray photoelectron spectroscopy (XPS), the short order in the SiO1.4 film was studied. The random bonding (RB) and random mixture (RM) models do not describe the experimental spectra of SiO1.4. The intermediate model (IM) structure of SiO1.4, based on the local spatial fluctuations of the chemical composition, which leads to potential fluctuations for electrons and holes, is proposed. In a wide range of electric fields and temperatures, the current-voltage characteristics of SiOx films (x = 1.4, 1.6) were measured. The Efros-Shklovskii percolation theory was used for the description of SiOx conductance. The percolation energy values for electrons: 0.5 eV for SiO1.4 and 0.8 eV for SiO1.6 were obtained. Taking into account that the potential fluctuation amplitude for electrons is 2.6 eV, the spatial potential fluctuation estimates for them are 2.8 and 3.4 nm for x = 1.4 and 1.6, respectively.

KW - electron percolation

KW - nanoscale potential fluctuations

KW - SiOx film

KW - XPS

KW - TRANSPORT

KW - PHOTOLUMINESCENCE

UR - http://www.scopus.com/inward/record.url?scp=85073618962&partnerID=8YFLogxK

U2 - 10.1088/2053-1591/ab4487

DO - 10.1088/2053-1591/ab4487

M3 - Article

AN - SCOPUS:85073618962

VL - 6

JO - Materials Research Express

JF - Materials Research Express

SN - 2053-1591

IS - 11

M1 - 116409

ER -

ID: 21937774