Research output: Contribution to journal › Article › peer-review
Multiphonon trap ionization transport in nonstoichiometric SiNx. / Gritsenko, V. A.; Gismatulin, A. A.; Chin, A.
In: Materials Research Express, Vol. 6, No. 3, 036304, 01.03.2019.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Multiphonon trap ionization transport in nonstoichiometric SiNx
AU - Gritsenko, V. A.
AU - Gismatulin, A. A.
AU - Chin, A.
PY - 2019/3/1
Y1 - 2019/3/1
N2 - It is generally accepted that the charge transport in dielectrics is governed by coulombic trap ionization due to a barrier lowering in high electric fields (Frenkel effect). In this paper, the charge transport mechanism in Si3N4 and nonstoichiometric silicon rich SiNx is experimentally studied and quantitatively analyzed with five theoretical models: Frenkel model of Coulomb traps ionization, Hill-Adachi model of overlapping Coulomb traps, Shklovskii-Efros percolation model, Makram-Ebeid and Lannoo model of multiphonon isolated traps ionization and Nasyrov-Gritsenko model of phonon-assisted electron tunneling between nearby traps. It is shown that the charge transport in Si3N4 and SiNx is qualitatively described by Frenkel effect, but Frenkel effect predicts an enormously low attempt to escape factor value. The charge transport at traps energies W t = 1.6 eV and W opt = 3.2 eV in Si3N4 and SiNx can be described by an increase in traps concentration in the framework of Makram-Ebeid and Lannoo model and Nasyrov-Gritsenko model. The Makram-Ebeid and Lannoo model quantitatively describes the charge transport in Si3N4 and SiNx with low silicon enrichment. The charge transport in nonstoichiometric SiNx with high silicon enrichment is well explained by Nasyrov-Gritsenko model.
AB - It is generally accepted that the charge transport in dielectrics is governed by coulombic trap ionization due to a barrier lowering in high electric fields (Frenkel effect). In this paper, the charge transport mechanism in Si3N4 and nonstoichiometric silicon rich SiNx is experimentally studied and quantitatively analyzed with five theoretical models: Frenkel model of Coulomb traps ionization, Hill-Adachi model of overlapping Coulomb traps, Shklovskii-Efros percolation model, Makram-Ebeid and Lannoo model of multiphonon isolated traps ionization and Nasyrov-Gritsenko model of phonon-assisted electron tunneling between nearby traps. It is shown that the charge transport in Si3N4 and SiNx is qualitatively described by Frenkel effect, but Frenkel effect predicts an enormously low attempt to escape factor value. The charge transport at traps energies W t = 1.6 eV and W opt = 3.2 eV in Si3N4 and SiNx can be described by an increase in traps concentration in the framework of Makram-Ebeid and Lannoo model and Nasyrov-Gritsenko model. The Makram-Ebeid and Lannoo model quantitatively describes the charge transport in Si3N4 and SiNx with low silicon enrichment. The charge transport in nonstoichiometric SiNx with high silicon enrichment is well explained by Nasyrov-Gritsenko model.
KW - Charge transport
KW - percolation
KW - traps
KW - traps ionization
KW - RETENTION
KW - CHARGE-TRANSPORT
KW - MECHANISMS
KW - NITRIDE
KW - charge transport
KW - ELECTRICAL-CONDUCTION
KW - MEMORY
KW - INTERFACE
KW - DEVICES
KW - AL2O3
UR - http://www.scopus.com/inward/record.url?scp=85059240890&partnerID=8YFLogxK
U2 - 10.1088/2053-1591/aaf61e
DO - 10.1088/2053-1591/aaf61e
M3 - Article
AN - SCOPUS:85059240890
VL - 6
JO - Materials Research Express
JF - Materials Research Express
SN - 2053-1591
IS - 3
M1 - 036304
ER -
ID: 18068974