TY - JOUR

T1 - Multiphonon trap ionization mechanism in amorphous SiNx

AU - Novikov, Yu N.

AU - Gritsenko, V. A.

N1 - Funding Information: Experiments were carried out under the grant of the Russian Foundation for Basic Research (RFBR) (project № 19-29-03018 ) and, partially, the work was carried out under state contract with the ISP SBRAS program № 0242-2021-0003 (models and numerical calculations). Publisher Copyright: © 2022 Elsevier B.V.

PY - 2022/4/15

Y1 - 2022/4/15

N2 - The charge transport mechanism in amorphous silicon nitride (a-SiNx) is experimentally analyzed in a wide range of electric fields and temperatures. The Frenkel effect with thermally assisted tunneling (TAT) and the multiphonon mechanism were used to describe the trap ionization. It is shown that the widespread Frenkel effect with TAT formally describes the experiment, but the agreement with the experiment is obtained if a small frequency factor (109 s−1) and a large tunneling effective mass (m*=3m0) are used. Thus, the Frenkel effect does not describe the charge transport in a-SiNx. The charge transport in a-SiNx is satisfactorily described by the multiphonon trap ionization mechanism with the following parameters: m* = 0.6m0, thermal and optical energies - WT = 1.6 eV and WOPT = 3.2 eV, respectively.

AB - The charge transport mechanism in amorphous silicon nitride (a-SiNx) is experimentally analyzed in a wide range of electric fields and temperatures. The Frenkel effect with thermally assisted tunneling (TAT) and the multiphonon mechanism were used to describe the trap ionization. It is shown that the widespread Frenkel effect with TAT formally describes the experiment, but the agreement with the experiment is obtained if a small frequency factor (109 s−1) and a large tunneling effective mass (m*=3m0) are used. Thus, the Frenkel effect does not describe the charge transport in a-SiNx. The charge transport in a-SiNx is satisfactorily described by the multiphonon trap ionization mechanism with the following parameters: m* = 0.6m0, thermal and optical energies - WT = 1.6 eV and WOPT = 3.2 eV, respectively.

KW - amorphous silicon nitride

KW - charge transport

KW - multiphonon ionization mechanism

KW - SiN

KW - traps

UR - http://www.scopus.com/inward/record.url?scp=85124223902&partnerID=8YFLogxK

U2 - 10.1016/j.jnoncrysol.2022.121442

DO - 10.1016/j.jnoncrysol.2022.121442

M3 - Article

AN - SCOPUS:85124223902

VL - 582

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

SN - 0022-3093

M1 - 121442

ER -