Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Multiphonon trap ionization mechanism in amorphous SiNx. / Novikov, Yu N.; Gritsenko, V. A.
в: Journal of Non-Crystalline Solids, Том 582, 121442, 15.04.2022.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Multiphonon trap ionization mechanism in amorphous SiNx
AU - Novikov, Yu N.
AU - Gritsenko, V. A.
N1 - Funding Information: Experiments were carried out under the grant of the Russian Foundation for Basic Research (RFBR) (project № 19-29-03018 ) and, partially, the work was carried out under state contract with the ISP SBRAS program № 0242-2021-0003 (models and numerical calculations). Publisher Copyright: © 2022 Elsevier B.V.
PY - 2022/4/15
Y1 - 2022/4/15
N2 - The charge transport mechanism in amorphous silicon nitride (a-SiNx) is experimentally analyzed in a wide range of electric fields and temperatures. The Frenkel effect with thermally assisted tunneling (TAT) and the multiphonon mechanism were used to describe the trap ionization. It is shown that the widespread Frenkel effect with TAT formally describes the experiment, but the agreement with the experiment is obtained if a small frequency factor (109 s−1) and a large tunneling effective mass (m*=3m0) are used. Thus, the Frenkel effect does not describe the charge transport in a-SiNx. The charge transport in a-SiNx is satisfactorily described by the multiphonon trap ionization mechanism with the following parameters: m* = 0.6m0, thermal and optical energies - WT = 1.6 eV and WOPT = 3.2 eV, respectively.
AB - The charge transport mechanism in amorphous silicon nitride (a-SiNx) is experimentally analyzed in a wide range of electric fields and temperatures. The Frenkel effect with thermally assisted tunneling (TAT) and the multiphonon mechanism were used to describe the trap ionization. It is shown that the widespread Frenkel effect with TAT formally describes the experiment, but the agreement with the experiment is obtained if a small frequency factor (109 s−1) and a large tunneling effective mass (m*=3m0) are used. Thus, the Frenkel effect does not describe the charge transport in a-SiNx. The charge transport in a-SiNx is satisfactorily described by the multiphonon trap ionization mechanism with the following parameters: m* = 0.6m0, thermal and optical energies - WT = 1.6 eV and WOPT = 3.2 eV, respectively.
KW - amorphous silicon nitride
KW - charge transport
KW - multiphonon ionization mechanism
KW - SiN
KW - traps
UR - http://www.scopus.com/inward/record.url?scp=85124223902&partnerID=8YFLogxK
U2 - 10.1016/j.jnoncrysol.2022.121442
DO - 10.1016/j.jnoncrysol.2022.121442
M3 - Article
AN - SCOPUS:85124223902
VL - 582
JO - Journal of Non-Crystalline Solids
JF - Journal of Non-Crystalline Solids
SN - 0022-3093
M1 - 121442
ER -
ID: 35551030