Mobility of the Two-Dimensional Electron Gas in DA-pHEMT Heterostructures with Various δ–n-Layer Profile Widths › Research Explorer

Novosibirsk State University's Research Portal

Mobility of the Two-Dimensional Electron Gas in DA-pHEMT Heterostructures with Various δ–n-Layer Profile Widths

Research output: Contribution to journal › Article › peer-review

DOI

https://doi.org/10.1134/S1063782618010189
Final published version

D. Yu Protasov
A. K. Bakarov
A. I. Toropov
B. Ya Ber
D. Yu Kazantsev
K. S. Zhuravlev

Original language	English
Pages (from-to)	44-52
Number of pages	9
Journal	Semiconductors
Volume	52
Issue number	1
DOIs	https://doi.org/10.1134/S1063782618010189
Publication status	Published - 1 Jan 2018

Research areas

FIELD-EFFECT TRANSISTORS, MOLECULAR-BEAM EPITAXY, QUANTUM-WELL, TRANSPORT, ALLOYS, GROWTH, POWER, GAAS, SI

OECD FOS+WOS

ID: 10422986