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Mobility of the Two-Dimensional Electron Gas in DA-pHEMT Heterostructures with Various δ–n-Layer Profile Widths. / Protasov, D. Yu; Bakarov, A. K.; Toropov, A. I. et al.

In: Semiconductors, Vol. 52, No. 1, 01.01.2018, p. 44-52.

Research output: Contribution to journal › Article › peer-review

Harvard

Protasov, DY, Bakarov, AK, Toropov, AI, Ber, BY, Kazantsev, DY & Zhuravlev, KS 2018, 'Mobility of the Two-Dimensional Electron Gas in DA-pHEMT Heterostructures with Various δ–n-Layer Profile Widths', Semiconductors, vol. 52, no. 1, pp. 44-52. https://doi.org/10.1134/S1063782618010189

APA

Protasov, D. Y., Bakarov, A. K., Toropov, A. I., Ber, B. Y., Kazantsev, D. Y., & Zhuravlev, K. S. (2018). Mobility of the Two-Dimensional Electron Gas in DA-pHEMT Heterostructures with Various δ–n-Layer Profile Widths. Semiconductors, 52(1), 44-52. https://doi.org/10.1134/S1063782618010189

Vancouver

Protasov DY, Bakarov AK, Toropov AI, Ber BY, Kazantsev DY, Zhuravlev KS. Mobility of the Two-Dimensional Electron Gas in DA-pHEMT Heterostructures with Various δ–n-Layer Profile Widths. Semiconductors. 2018 Jan 1;52(1):44-52. doi: 10.1134/S1063782618010189

Author

Protasov, D. Yu ; Bakarov, A. K. ; Toropov, A. I. et al. / Mobility of the Two-Dimensional Electron Gas in DA-pHEMT Heterostructures with Various δ–n-Layer Profile Widths. In: Semiconductors. 2018 ; Vol. 52, No. 1. pp. 44-52.

BibTeX

@article{f71b2a20a4ca40efad6e611258c69359,
title = "Mobility of the Two-Dimensional Electron Gas in DA-pHEMT Heterostructures with Various δ–n-Layer Profile Widths",
abstract = "The effect of the silicon-atom distribution profile in donor δ-layers of AlGaAs/InGaAs/AlGaAs heterostructures with donor–acceptor doping on the mobility of the two-dimensional electron gas is studied. The parameters of the δ-layer profiles are determined using the normal approximation of the spatial distributions of silicon atoms, measured by secondary-ion mass spectroscopy. It is shown that the standard deviation σ of the δ-layer profile can be reduced from 3.4 to 2.5 nm by the proper selection of growth conditions. Measurements of the magnetic-field dependences of the Hall effect and conductivity show that such a decrease in σ allowed an increase in the mobility of the two-dimensional electron gas in heterostructures by 4000 cm2/(V s) at 77 K and 600 cm2/(V s) at 300 K. The mobility calculation taking into account filling of the first two size-quantization subbands shows that an increase in the mobility is well explained by a reduction in the Coulomb scattering at ionized donors due to an increase in the effective thickness of the spacer layer with decreasing σ of the δ-layer profile.",
keywords = "FIELD-EFFECT TRANSISTORS, MOLECULAR-BEAM EPITAXY, QUANTUM-WELL, TRANSPORT, ALLOYS, GROWTH, POWER, GAAS, SI",
author = "Protasov, {D. Yu} and Bakarov, {A. K.} and Toropov, {A. I.} and Ber, {B. Ya} and Kazantsev, {D. Yu} and Zhuravlev, {K. S.}",
year = "2018",
month = jan,
day = "1",
doi = "10.1134/S1063782618010189",
language = "English",
volume = "52",
pages = "44--52",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "PLEIADES PUBLISHING INC",
number = "1",

}

RIS

TY - JOUR

T1 - Mobility of the Two-Dimensional Electron Gas in DA-pHEMT Heterostructures with Various δ–n-Layer Profile Widths

AU - Protasov, D. Yu

AU - Bakarov, A. K.

AU - Toropov, A. I.

AU - Ber, B. Ya

AU - Kazantsev, D. Yu

AU - Zhuravlev, K. S.

PY - 2018/1/1

Y1 - 2018/1/1

N2 - The effect of the silicon-atom distribution profile in donor δ-layers of AlGaAs/InGaAs/AlGaAs heterostructures with donor–acceptor doping on the mobility of the two-dimensional electron gas is studied. The parameters of the δ-layer profiles are determined using the normal approximation of the spatial distributions of silicon atoms, measured by secondary-ion mass spectroscopy. It is shown that the standard deviation σ of the δ-layer profile can be reduced from 3.4 to 2.5 nm by the proper selection of growth conditions. Measurements of the magnetic-field dependences of the Hall effect and conductivity show that such a decrease in σ allowed an increase in the mobility of the two-dimensional electron gas in heterostructures by 4000 cm2/(V s) at 77 K and 600 cm2/(V s) at 300 K. The mobility calculation taking into account filling of the first two size-quantization subbands shows that an increase in the mobility is well explained by a reduction in the Coulomb scattering at ionized donors due to an increase in the effective thickness of the spacer layer with decreasing σ of the δ-layer profile.

AB - The effect of the silicon-atom distribution profile in donor δ-layers of AlGaAs/InGaAs/AlGaAs heterostructures with donor–acceptor doping on the mobility of the two-dimensional electron gas is studied. The parameters of the δ-layer profiles are determined using the normal approximation of the spatial distributions of silicon atoms, measured by secondary-ion mass spectroscopy. It is shown that the standard deviation σ of the δ-layer profile can be reduced from 3.4 to 2.5 nm by the proper selection of growth conditions. Measurements of the magnetic-field dependences of the Hall effect and conductivity show that such a decrease in σ allowed an increase in the mobility of the two-dimensional electron gas in heterostructures by 4000 cm2/(V s) at 77 K and 600 cm2/(V s) at 300 K. The mobility calculation taking into account filling of the first two size-quantization subbands shows that an increase in the mobility is well explained by a reduction in the Coulomb scattering at ionized donors due to an increase in the effective thickness of the spacer layer with decreasing σ of the δ-layer profile.

KW - FIELD-EFFECT TRANSISTORS

KW - MOLECULAR-BEAM EPITAXY

KW - QUANTUM-WELL

KW - TRANSPORT

KW - ALLOYS

KW - GROWTH

KW - POWER

KW - GAAS

KW - SI

UR - http://www.scopus.com/inward/record.url?scp=85042136923&partnerID=8YFLogxK

U2 - 10.1134/S1063782618010189

DO - 10.1134/S1063782618010189

M3 - Article

AN - SCOPUS:85042136923

VL - 52

SP - 44

EP - 52

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 1

ER -

ID: 10422986