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Memory Properties of SiO x- and SiN x-Based Memristors. / Gritsenko, V. A.; Gismatulin, A. A.; Orlov, O. M.

In: Nanobiotechnology reports, Vol. 16, No. 6, 11.2021, p. 722-731.

Research output: Contribution to journal › Review article › peer-review

Harvard

Gritsenko, VA, Gismatulin, AA & Orlov, OM 2021, 'Memory Properties of SiO x- and SiN x-Based Memristors', Nanobiotechnology reports, vol. 16, no. 6, pp. 722-731. https://doi.org/10.1134/S2635167621060070

APA

Gritsenko, V. A., Gismatulin, A. A., & Orlov, O. M. (2021). Memory Properties of SiO x- and SiN x-Based Memristors. Nanobiotechnology reports, 16(6), 722-731. https://doi.org/10.1134/S2635167621060070

Vancouver

Gritsenko VA, Gismatulin AA, Orlov OM. Memory Properties of SiO x- and SiN x-Based Memristors. Nanobiotechnology reports. 2021 Nov;16(6):722-731. doi: 10.1134/S2635167621060070

Author

Gritsenko, V. A. ; Gismatulin, A. A. ; Orlov, O. M. / Memory Properties of SiO x- and SiN x-Based Memristors. In: Nanobiotechnology reports. 2021 ; Vol. 16, No. 6. pp. 722-731.

BibTeX

@article{cfcc8a5fdf354d879632e696abb4b9c8,
title = "Memory Properties of SiO x- and SiN x-Based Memristors",
abstract = "Silicon oxide and silicon nitride are the two key dielectrics used in modern silicon devices. The memory properties of SiOx- and SiNx-based memristors obtained by plasma-enhanced chemical vapor deposition, pyrolysis, and high-frequency reactive sputtering are reviewed. The nitrides obtained by high-frequency reactive sputtering have the best memory properties: a memory window of 102, a memristor endurance of up to 109 cycles at the same memory window, and a memristor retention of up to 105 s at the same memory window.",
author = "Gritsenko, {V. A.} and Gismatulin, {A. A.} and Orlov, {O. M.}",
note = "Funding Information: This study was supported by the Russian Foundation for Basic Research, project no. 19-29-03018 (SiO-based memristors) and the Russian Science Foundation, project no. 19-19-00286 (SiN-based memristors). x x Publisher Copyright: {\textcopyright} 2021, Pleiades Publishing, Ltd.",
year = "2021",
month = nov,
doi = "10.1134/S2635167621060070",
language = "English",
volume = "16",
pages = "722--731",
journal = "Nanobiotechnology reports",
issn = "2635-1676",
publisher = "PLEIADES PUBLISHING INC",
number = "6",

}

RIS

TY - JOUR

T1 - Memory Properties of SiO x- and SiN x-Based Memristors

AU - Gritsenko, V. A.

AU - Gismatulin, A. A.

AU - Orlov, O. M.

N1 - Funding Information: This study was supported by the Russian Foundation for Basic Research, project no. 19-29-03018 (SiO-based memristors) and the Russian Science Foundation, project no. 19-19-00286 (SiN-based memristors). x x Publisher Copyright: © 2021, Pleiades Publishing, Ltd.

PY - 2021/11

Y1 - 2021/11

N2 - Silicon oxide and silicon nitride are the two key dielectrics used in modern silicon devices. The memory properties of SiOx- and SiNx-based memristors obtained by plasma-enhanced chemical vapor deposition, pyrolysis, and high-frequency reactive sputtering are reviewed. The nitrides obtained by high-frequency reactive sputtering have the best memory properties: a memory window of 102, a memristor endurance of up to 109 cycles at the same memory window, and a memristor retention of up to 105 s at the same memory window.

AB - Silicon oxide and silicon nitride are the two key dielectrics used in modern silicon devices. The memory properties of SiOx- and SiNx-based memristors obtained by plasma-enhanced chemical vapor deposition, pyrolysis, and high-frequency reactive sputtering are reviewed. The nitrides obtained by high-frequency reactive sputtering have the best memory properties: a memory window of 102, a memristor endurance of up to 109 cycles at the same memory window, and a memristor retention of up to 105 s at the same memory window.

UR - http://www.scopus.com/inward/record.url?scp=85123759547&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/f7ccb207-fcdd-3759-8b40-9c990428c09b/

U2 - 10.1134/S2635167621060070

DO - 10.1134/S2635167621060070

M3 - Review article

AN - SCOPUS:85123759547

VL - 16

SP - 722

EP - 731

JO - Nanobiotechnology reports

JF - Nanobiotechnology reports

SN - 2635-1676

IS - 6

ER -

ID: 35464156