Результаты исследований: Научные публикации в периодических изданиях › обзорная статья › Рецензирование
Memory Properties of SiO x- and SiN x-Based Memristors. / Gritsenko, V. A.; Gismatulin, A. A.; Orlov, O. M.
в: Nanobiotechnology reports, Том 16, № 6, 11.2021, стр. 722-731.Результаты исследований: Научные публикации в периодических изданиях › обзорная статья › Рецензирование
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TY - JOUR
T1 - Memory Properties of SiO x- and SiN x-Based Memristors
AU - Gritsenko, V. A.
AU - Gismatulin, A. A.
AU - Orlov, O. M.
N1 - Funding Information: This study was supported by the Russian Foundation for Basic Research, project no. 19-29-03018 (SiO-based memristors) and the Russian Science Foundation, project no. 19-19-00286 (SiN-based memristors). x x Publisher Copyright: © 2021, Pleiades Publishing, Ltd.
PY - 2021/11
Y1 - 2021/11
N2 - Silicon oxide and silicon nitride are the two key dielectrics used in modern silicon devices. The memory properties of SiOx- and SiNx-based memristors obtained by plasma-enhanced chemical vapor deposition, pyrolysis, and high-frequency reactive sputtering are reviewed. The nitrides obtained by high-frequency reactive sputtering have the best memory properties: a memory window of 102, a memristor endurance of up to 109 cycles at the same memory window, and a memristor retention of up to 105 s at the same memory window.
AB - Silicon oxide and silicon nitride are the two key dielectrics used in modern silicon devices. The memory properties of SiOx- and SiNx-based memristors obtained by plasma-enhanced chemical vapor deposition, pyrolysis, and high-frequency reactive sputtering are reviewed. The nitrides obtained by high-frequency reactive sputtering have the best memory properties: a memory window of 102, a memristor endurance of up to 109 cycles at the same memory window, and a memristor retention of up to 105 s at the same memory window.
UR - http://www.scopus.com/inward/record.url?scp=85123759547&partnerID=8YFLogxK
UR - https://www.mendeley.com/catalogue/f7ccb207-fcdd-3759-8b40-9c990428c09b/
U2 - 10.1134/S2635167621060070
DO - 10.1134/S2635167621060070
M3 - Review article
AN - SCOPUS:85123759547
VL - 16
SP - 722
EP - 731
JO - Nanobiotechnology reports
JF - Nanobiotechnology reports
SN - 2635-1676
IS - 6
ER -
ID: 35464156