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Mechanisms of Optical Gain in Heavily Doped AlxGa1 –xN:Si Structures (x = 0.56–1). / Bokhan, P. A.; Zhuravlev, K. S.; Zakrevsky, D. E. et al.

In: Semiconductors, Vol. 58, No. 5, 05.2024, p. 386-392.

Research output: Contribution to journal › Article › peer-review

Harvard

Bokhan, PA, Zhuravlev, KS, Zakrevsky, DE, Malin, TV & Fateev, NV 2024, 'Mechanisms of Optical Gain in Heavily Doped AlxGa1 –xN:Si Structures (x = 0.56–1)', Semiconductors, vol. 58, no. 5, pp. 386-392. https://doi.org/10.1134/S1063782624050026

APA

Bokhan, P. A., Zhuravlev, K. S., Zakrevsky, D. E., Malin, T. V., & Fateev, N. V. (2024). Mechanisms of Optical Gain in Heavily Doped AlxGa1 –xN:Si Structures (x = 0.56–1). Semiconductors, 58(5), 386-392. https://doi.org/10.1134/S1063782624050026

Vancouver

Bokhan PA, Zhuravlev KS, Zakrevsky DE, Malin TV, Fateev NV. Mechanisms of Optical Gain in Heavily Doped AlxGa1 –xN:Si Structures (x = 0.56–1). Semiconductors. 2024 May;58(5): 386-392. doi: 10.1134/S1063782624050026

Author

Bokhan, P. A. ; Zhuravlev, K. S. ; Zakrevsky, D. E. et al. / Mechanisms of Optical Gain in Heavily Doped AlxGa1 –xN:Si Structures (x = 0.56–1). In: Semiconductors. 2024 ; Vol. 58, No. 5. pp. 386-392.

BibTeX

@article{cac7382f2e2e4ae3baf60a87912f6a27,
title = "Mechanisms of Optical Gain in Heavily Doped AlxGa1 –xN:Si Structures (x = 0.56–1)",
abstract = "The optical gain parameters in the six heavily doped AlxGa1 – xN:Si structures with x = 0.56, 0.62, 0.65, 0.68, 0.74, were experimentally studied at room temperature. Under optical excitation by pulsed radiation with λ = 266 nm, the mechanisms of stimulated emission of radiative recombination of nonequilibrium charge carriers, leading to the appearance of broadband radiation in the wide range (350–650 nm) of the spectrum with a high luminescence quantum yield are studied. High optical gain (>103 cm–1) are realized due to the good optical quality of the structures, large donor-acceptor recombination cross sections (~10–15 cm2) and the high density (up to 1020 cm–3) of radiative recombination centers. ",
author = "Bokhan, {P. A.} and Zhuravlev, {K. S.} and Zakrevsky, {D. E.} and Malin, {T. V.} and Fateev, {N. V.}",
note = "This study was carried out under state assignment FWGW-2022-0012.",
year = "2024",
month = may,
doi = "10.1134/S1063782624050026",
language = "English",
volume = "58",
pages = " 386--392",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "PLEIADES PUBLISHING INC",
number = "5",

}

RIS

TY - JOUR

T1 - Mechanisms of Optical Gain in Heavily Doped AlxGa1 –xN:Si Structures (x = 0.56–1)

AU - Bokhan, P. A.

AU - Zhuravlev, K. S.

AU - Zakrevsky, D. E.

AU - Malin, T. V.

AU - Fateev, N. V.

N1 - This study was carried out under state assignment FWGW-2022-0012.

PY - 2024/5

Y1 - 2024/5

N2 - The optical gain parameters in the six heavily doped AlxGa1 – xN:Si structures with x = 0.56, 0.62, 0.65, 0.68, 0.74, were experimentally studied at room temperature. Under optical excitation by pulsed radiation with λ = 266 nm, the mechanisms of stimulated emission of radiative recombination of nonequilibrium charge carriers, leading to the appearance of broadband radiation in the wide range (350–650 nm) of the spectrum with a high luminescence quantum yield are studied. High optical gain (>103 cm–1) are realized due to the good optical quality of the structures, large donor-acceptor recombination cross sections (~10–15 cm2) and the high density (up to 1020 cm–3) of radiative recombination centers.

AB - The optical gain parameters in the six heavily doped AlxGa1 – xN:Si structures with x = 0.56, 0.62, 0.65, 0.68, 0.74, were experimentally studied at room temperature. Under optical excitation by pulsed radiation with λ = 266 nm, the mechanisms of stimulated emission of radiative recombination of nonequilibrium charge carriers, leading to the appearance of broadband radiation in the wide range (350–650 nm) of the spectrum with a high luminescence quantum yield are studied. High optical gain (>103 cm–1) are realized due to the good optical quality of the structures, large donor-acceptor recombination cross sections (~10–15 cm2) and the high density (up to 1020 cm–3) of radiative recombination centers.

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85204284095&origin=inward&txGid=59f57c3005c0ea9438a610bd73fa0b0b

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:001316323700010

U2 - 10.1134/S1063782624050026

DO - 10.1134/S1063782624050026

M3 - Article

VL - 58

SP - 386

EP - 392

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 5

ER -

ID: 61123219