Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Mechanisms of Optical Gain in Heavily Doped AlxGa1 –xN:Si Structures (x = 0.56–1). / Bokhan, P. A.; Zhuravlev, K. S.; Zakrevsky, D. E. и др.
в: Semiconductors, Том 58, № 5, 05.2024, стр. 386-392.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Mechanisms of Optical Gain in Heavily Doped AlxGa1 –xN:Si Structures (x = 0.56–1)
AU - Bokhan, P. A.
AU - Zhuravlev, K. S.
AU - Zakrevsky, D. E.
AU - Malin, T. V.
AU - Fateev, N. V.
N1 - This study was carried out under state assignment FWGW-2022-0012.
PY - 2024/5
Y1 - 2024/5
N2 - The optical gain parameters in the six heavily doped AlxGa1 – xN:Si structures with x = 0.56, 0.62, 0.65, 0.68, 0.74, were experimentally studied at room temperature. Under optical excitation by pulsed radiation with λ = 266 nm, the mechanisms of stimulated emission of radiative recombination of nonequilibrium charge carriers, leading to the appearance of broadband radiation in the wide range (350–650 nm) of the spectrum with a high luminescence quantum yield are studied. High optical gain (>103 cm–1) are realized due to the good optical quality of the structures, large donor-acceptor recombination cross sections (~10–15 cm2) and the high density (up to 1020 cm–3) of radiative recombination centers.
AB - The optical gain parameters in the six heavily doped AlxGa1 – xN:Si structures with x = 0.56, 0.62, 0.65, 0.68, 0.74, were experimentally studied at room temperature. Under optical excitation by pulsed radiation with λ = 266 nm, the mechanisms of stimulated emission of radiative recombination of nonequilibrium charge carriers, leading to the appearance of broadband radiation in the wide range (350–650 nm) of the spectrum with a high luminescence quantum yield are studied. High optical gain (>103 cm–1) are realized due to the good optical quality of the structures, large donor-acceptor recombination cross sections (~10–15 cm2) and the high density (up to 1020 cm–3) of radiative recombination centers.
UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85204284095&origin=inward&txGid=59f57c3005c0ea9438a610bd73fa0b0b
UR - https://www.webofscience.com/wos/woscc/full-record/WOS:001316323700010
U2 - 10.1134/S1063782624050026
DO - 10.1134/S1063782624050026
M3 - Article
VL - 58
SP - 386
EP - 392
JO - Semiconductors
JF - Semiconductors
SN - 1063-7826
IS - 5
ER -
ID: 61123219