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Mechanism of stress induced leakage current in Si 3 N 4. / Gritsenko, V. A.; Gismatulin, A. A.; Baraban, A. P. et al.

In: Materials Research Express, Vol. 6, No. 7, 076401, 03.04.2019.

Research output: Contribution to journal › Article › peer-review

Harvard

Gritsenko, VA, Gismatulin, AA, Baraban, AP & Chin, A 2019, 'Mechanism of stress induced leakage current in Si 3 N 4', Materials Research Express, vol. 6, no. 7, 076401. https://doi.org/10.1088/2053-1591/ab1223

APA

Gritsenko, V. A., Gismatulin, A. A., Baraban, A. P., & Chin, A. (2019). Mechanism of stress induced leakage current in Si 3 N 4. Materials Research Express, 6(7), [076401]. https://doi.org/10.1088/2053-1591/ab1223

Vancouver

Gritsenko VA, Gismatulin AA, Baraban AP, Chin A. Mechanism of stress induced leakage current in Si 3 N 4. Materials Research Express. 2019 Apr 3;6(7):076401. doi: 10.1088/2053-1591/ab1223

Author

Gritsenko, V. A. ; Gismatulin, A. A. ; Baraban, A. P. et al. / Mechanism of stress induced leakage current in Si 3 N 4. In: Materials Research Express. 2019 ; Vol. 6, No. 7.

BibTeX

@article{1b40207730834d56a9699a3e4ac461c9,
title = "Mechanism of stress induced leakage current in Si 3 N 4",
abstract = " In this paper, the experimental current density versus electric field characteristics of Si 3 N 4 before and after the electrical field-induced stress were measured. It is shown that, the Frenkel model of Coulomb trap ionization, Hill-Adachi model of overlapping Coulomb traps, Makram-Ebeid and Lannoo multiphonon isolated trap ionization model do not describe the charge transport of Si 3 N 4 before and after the electrical field-induced stress. The Nasyrov-Gritsenko model of phonon assisted tunneling between traps quantitatively describes the hole transport mechanism in Si 3 N 4 before and after the induced stress at traps energies W t =1.6 eV and W opt =3.2 eV. The current leakage at different induced stresses in Si 3 N 4 is explained by the increase of trap concentration via the creation of Si-Si bonds, which are traps in Si 3 N 4 . ",
keywords = "charge transport, SILC, traps, SILICON-NITRIDE, MEMORY, RETENTION, CHARGE-TRANSPORT, CONDUCTION, DEVICES, MODEL",
author = "Gritsenko, {V. A.} and Gismatulin, {A. A.} and Baraban, {A. P.} and A. Chin",
year = "2019",
month = apr,
day = "3",
doi = "10.1088/2053-1591/ab1223",
language = "English",
volume = "6",
journal = "Materials Research Express",
issn = "2053-1591",
publisher = "IOP Publishing Ltd.",
number = "7",

}

RIS

TY - JOUR

T1 - Mechanism of stress induced leakage current in Si 3 N 4

AU - Gritsenko, V. A.

AU - Gismatulin, A. A.

AU - Baraban, A. P.

AU - Chin, A.

PY - 2019/4/3

Y1 - 2019/4/3

N2 - In this paper, the experimental current density versus electric field characteristics of Si 3 N 4 before and after the electrical field-induced stress were measured. It is shown that, the Frenkel model of Coulomb trap ionization, Hill-Adachi model of overlapping Coulomb traps, Makram-Ebeid and Lannoo multiphonon isolated trap ionization model do not describe the charge transport of Si 3 N 4 before and after the electrical field-induced stress. The Nasyrov-Gritsenko model of phonon assisted tunneling between traps quantitatively describes the hole transport mechanism in Si 3 N 4 before and after the induced stress at traps energies W t =1.6 eV and W opt =3.2 eV. The current leakage at different induced stresses in Si 3 N 4 is explained by the increase of trap concentration via the creation of Si-Si bonds, which are traps in Si 3 N 4 .

AB - In this paper, the experimental current density versus electric field characteristics of Si 3 N 4 before and after the electrical field-induced stress were measured. It is shown that, the Frenkel model of Coulomb trap ionization, Hill-Adachi model of overlapping Coulomb traps, Makram-Ebeid and Lannoo multiphonon isolated trap ionization model do not describe the charge transport of Si 3 N 4 before and after the electrical field-induced stress. The Nasyrov-Gritsenko model of phonon assisted tunneling between traps quantitatively describes the hole transport mechanism in Si 3 N 4 before and after the induced stress at traps energies W t =1.6 eV and W opt =3.2 eV. The current leakage at different induced stresses in Si 3 N 4 is explained by the increase of trap concentration via the creation of Si-Si bonds, which are traps in Si 3 N 4 .

KW - charge transport

KW - SILC

KW - traps

KW - SILICON-NITRIDE

KW - MEMORY

KW - RETENTION

KW - CHARGE-TRANSPORT

KW - CONDUCTION

KW - DEVICES

KW - MODEL

UR - http://www.scopus.com/inward/record.url?scp=85066028475&partnerID=8YFLogxK

U2 - 10.1088/2053-1591/ab1223

DO - 10.1088/2053-1591/ab1223

M3 - Article

AN - SCOPUS:85066028475

VL - 6

JO - Materials Research Express

JF - Materials Research Express

SN - 2053-1591

IS - 7

M1 - 076401

ER -

ID: 20040570