Mechanism of stress induced leakage current in Si 3 N 4 › Research Explorer

DOI

https://doi.org/10.1088/2053-1591/ab1223
Final published version

V. A. Gritsenko
A. A. Gismatulin
A. P. Baraban
A. Chin

Original language	English
Article number	076401
Number of pages	6
Journal	Materials Research Express
Volume	6
Issue number	7
DOIs	https://doi.org/10.1088/2053-1591/ab1223
Publication status	Published - 3 Apr 2019

OECD FOS+WOS

Research areas

charge transport, SILC, traps, SILICON-NITRIDE, MEMORY, RETENTION, CHARGE-TRANSPORT, CONDUCTION, DEVICES, MODEL

ID: 20040570