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Low-temperature dissipation and its persistent photoinduced change in AlGaAs/GaAs-based nanomechanical resonators. / Shevyrin, A. A.; Pogosov, A. G.; Bakarov, A. K. et al.

In: Applied Physics Letters, Vol. 116, No. 5, 053104, 03.02.2020.

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@article{17ea2fd21f714e6e81723dd4a20c2e68,
title = "Low-temperature dissipation and its persistent photoinduced change in AlGaAs/GaAs-based nanomechanical resonators",
abstract = "Low-temperature dissipation of mechanical energy is studied in AlGaAs/GaAs-based nanomechanical resonators with a two-dimensional electron gas. It is experimentally shown that the temperature dependence of dissipation demonstrates a peak near 30 K. A short illumination leads to a persistent change in the quality factor, which can be compared with the persistent photoconductivity effect. In particular, the illumination persistently suppresses the dissipation peak. This suppression shows that the nature of the peak is not related to the thermoelastic and Akhiezer damping. A hypothesis associating the peak with DX-centers or similar low-symmetry and light-sensitive centers is proposed. The observed effects should be taken into account when studying the low-temperature dissipation using optical methods.",
keywords = "DX-CENTER, UNIAXIAL-STRESS, DONOR LEVELS, GAAS, SYMMETRY, CENTERS, QUANTUM",
author = "Shevyrin, {A. A.} and Pogosov, {A. G.} and Bakarov, {A. K.} and Shklyaev, {A. A.}",
note = "Publisher Copyright: {\textcopyright} 2020 Author(s). Copyright: Copyright 2020 Elsevier B.V., All rights reserved.",
year = "2020",
month = feb,
day = "3",
doi = "10.1063/1.5143636",
language = "English",
volume = "116",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "5",

}

RIS

TY - JOUR

T1 - Low-temperature dissipation and its persistent photoinduced change in AlGaAs/GaAs-based nanomechanical resonators

AU - Shevyrin, A. A.

AU - Pogosov, A. G.

AU - Bakarov, A. K.

AU - Shklyaev, A. A.

N1 - Publisher Copyright: © 2020 Author(s). Copyright: Copyright 2020 Elsevier B.V., All rights reserved.

PY - 2020/2/3

Y1 - 2020/2/3

N2 - Low-temperature dissipation of mechanical energy is studied in AlGaAs/GaAs-based nanomechanical resonators with a two-dimensional electron gas. It is experimentally shown that the temperature dependence of dissipation demonstrates a peak near 30 K. A short illumination leads to a persistent change in the quality factor, which can be compared with the persistent photoconductivity effect. In particular, the illumination persistently suppresses the dissipation peak. This suppression shows that the nature of the peak is not related to the thermoelastic and Akhiezer damping. A hypothesis associating the peak with DX-centers or similar low-symmetry and light-sensitive centers is proposed. The observed effects should be taken into account when studying the low-temperature dissipation using optical methods.

AB - Low-temperature dissipation of mechanical energy is studied in AlGaAs/GaAs-based nanomechanical resonators with a two-dimensional electron gas. It is experimentally shown that the temperature dependence of dissipation demonstrates a peak near 30 K. A short illumination leads to a persistent change in the quality factor, which can be compared with the persistent photoconductivity effect. In particular, the illumination persistently suppresses the dissipation peak. This suppression shows that the nature of the peak is not related to the thermoelastic and Akhiezer damping. A hypothesis associating the peak with DX-centers or similar low-symmetry and light-sensitive centers is proposed. The observed effects should be taken into account when studying the low-temperature dissipation using optical methods.

KW - DX-CENTER

KW - UNIAXIAL-STRESS

KW - DONOR LEVELS

KW - GAAS

KW - SYMMETRY

KW - CENTERS

KW - QUANTUM

UR - http://www.scopus.com/inward/record.url?scp=85079331939&partnerID=8YFLogxK

U2 - 10.1063/1.5143636

DO - 10.1063/1.5143636

M3 - Article

AN - SCOPUS:85079331939

VL - 116

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 5

M1 - 053104

ER -

ID: 23426976