Standard

Local anodic oxidation of solid GeO films : The nanopatterning possibilities. / Astankova, K. N.; Gorokhov, E. B.; Azarov, I. A. et al.

In: Surfaces and Interfaces, Vol. 6, 01.03.2017, p. 56-59.

Research output: Contribution to journal › Article › peer-review

Harvard

Astankova, KN, Gorokhov, EB, Azarov, IA, Volodin, VA & Latyshev, AV 2017, 'Local anodic oxidation of solid GeO films: The nanopatterning possibilities', Surfaces and Interfaces, vol. 6, pp. 56-59. https://doi.org/10.1016/j.surfin.2016.11.010

APA

Astankova, K. N., Gorokhov, E. B., Azarov, I. A., Volodin, V. A., & Latyshev, A. V. (2017). Local anodic oxidation of solid GeO films: The nanopatterning possibilities. Surfaces and Interfaces, 6, 56-59. https://doi.org/10.1016/j.surfin.2016.11.010

Vancouver

Astankova KN, Gorokhov EB, Azarov IA, Volodin VA, Latyshev AV. Local anodic oxidation of solid GeO films: The nanopatterning possibilities. Surfaces and Interfaces. 2017 Mar 1;6:56-59. doi: 10.1016/j.surfin.2016.11.010

Author

Astankova, K. N. ; Gorokhov, E. B. ; Azarov, I. A. et al. / Local anodic oxidation of solid GeO films : The nanopatterning possibilities. In: Surfaces and Interfaces. 2017 ; Vol. 6. pp. 56-59.

BibTeX

@article{3540b5e45ce9431e841509abdd6ef5c8,
title = "Local anodic oxidation of solid GeO films: The nanopatterning possibilities",
abstract = "Metastable germanium monoxide (GeO) thin-insulating films have been investigated as a new promising material for oxidation scanning probe lithography. Amorphous GeO films were deposited onto cool Si substrates by thermal evaporation of GeO2<Ge-NCs> heterostructure in vacuum. Properties of GeO films were studied by means of IR spectroscopy, Raman spectroscopy, atomic force microscopy (AFM) and scanning electron microscopy. The nanopatterning of GeO films included three stages. First, AFM-induced local anodic oxidation of GeO layer was used to obtain GeO2 nanowires on Si substrate. After local anodic oxidation in high voltage (≥9 V) regime at 80% relative humidity, the cross-section profile of fabricated GeO2 protrusions contained anomalously high double peaks on a broad base (“two-story shape”). Then, thermal annealing was employed to decompose the GeO film into a GeO2 matrix and Ge nanoclusters. Third, after selective etching of GeO2 from the decomposed GeO film, trenches remained in the porous Ge layer instead of GeO2 nanowires. This may be a potentially useful lithographic approach for fabricating nanoscale structures.",
keywords = "Germanium dioxide, Germanium monoxide, Local anodic oxidation, Nanowires, THIN-FILMS, HUMIDITY, SILICON, SURFACE, SCANNING PROBE LITHOGRAPHY, NANO-OXIDATION, ATOMIC-FORCE MICROSCOPE",
author = "Astankova, {K. N.} and Gorokhov, {E. B.} and Azarov, {I. A.} and Volodin, {V. A.} and Latyshev, {A. V.}",
year = "2017",
month = mar,
day = "1",
doi = "10.1016/j.surfin.2016.11.010",
language = "English",
volume = "6",
pages = "56--59",
journal = "Surfaces and Interfaces",
issn = "2468-0230",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Local anodic oxidation of solid GeO films

T2 - The nanopatterning possibilities

AU - Astankova, K. N.

AU - Gorokhov, E. B.

AU - Azarov, I. A.

AU - Volodin, V. A.

AU - Latyshev, A. V.

PY - 2017/3/1

Y1 - 2017/3/1

N2 - Metastable germanium monoxide (GeO) thin-insulating films have been investigated as a new promising material for oxidation scanning probe lithography. Amorphous GeO films were deposited onto cool Si substrates by thermal evaporation of GeO2<Ge-NCs> heterostructure in vacuum. Properties of GeO films were studied by means of IR spectroscopy, Raman spectroscopy, atomic force microscopy (AFM) and scanning electron microscopy. The nanopatterning of GeO films included three stages. First, AFM-induced local anodic oxidation of GeO layer was used to obtain GeO2 nanowires on Si substrate. After local anodic oxidation in high voltage (≥9 V) regime at 80% relative humidity, the cross-section profile of fabricated GeO2 protrusions contained anomalously high double peaks on a broad base (“two-story shape”). Then, thermal annealing was employed to decompose the GeO film into a GeO2 matrix and Ge nanoclusters. Third, after selective etching of GeO2 from the decomposed GeO film, trenches remained in the porous Ge layer instead of GeO2 nanowires. This may be a potentially useful lithographic approach for fabricating nanoscale structures.

AB - Metastable germanium monoxide (GeO) thin-insulating films have been investigated as a new promising material for oxidation scanning probe lithography. Amorphous GeO films were deposited onto cool Si substrates by thermal evaporation of GeO2<Ge-NCs> heterostructure in vacuum. Properties of GeO films were studied by means of IR spectroscopy, Raman spectroscopy, atomic force microscopy (AFM) and scanning electron microscopy. The nanopatterning of GeO films included three stages. First, AFM-induced local anodic oxidation of GeO layer was used to obtain GeO2 nanowires on Si substrate. After local anodic oxidation in high voltage (≥9 V) regime at 80% relative humidity, the cross-section profile of fabricated GeO2 protrusions contained anomalously high double peaks on a broad base (“two-story shape”). Then, thermal annealing was employed to decompose the GeO film into a GeO2 matrix and Ge nanoclusters. Third, after selective etching of GeO2 from the decomposed GeO film, trenches remained in the porous Ge layer instead of GeO2 nanowires. This may be a potentially useful lithographic approach for fabricating nanoscale structures.

KW - Germanium dioxide

KW - Germanium monoxide

KW - Local anodic oxidation

KW - Nanowires

KW - THIN-FILMS

KW - HUMIDITY

KW - SILICON

KW - SURFACE

KW - SCANNING PROBE LITHOGRAPHY

KW - NANO-OXIDATION

KW - ATOMIC-FORCE MICROSCOPE

UR - http://www.scopus.com/inward/record.url?scp=85014259440&partnerID=8YFLogxK

U2 - 10.1016/j.surfin.2016.11.010

DO - 10.1016/j.surfin.2016.11.010

M3 - Article

AN - SCOPUS:85014259440

VL - 6

SP - 56

EP - 59

JO - Surfaces and Interfaces

JF - Surfaces and Interfaces

SN - 2468-0230

ER -

ID: 10277252