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Light-emitting defects formed in GeO/SiO2 heterostructures with assistance of swift heavy ions. / Cherkova, S. G.; Volodin, V. A.; Skuratov, V. A. et al.

In: Journal of Luminescence, Vol. 207, 01.03.2019, p. 209-212.

Research output: Contribution to journal › Article › peer-review

Harvard

Cherkova, SG, Volodin, VA, Skuratov, VA, Stoffel, M, Rinnert, H & Vergnat, M 2019, 'Light-emitting defects formed in GeO/SiO2 heterostructures with assistance of swift heavy ions', Journal of Luminescence, vol. 207, pp. 209-212. https://doi.org/10.1016/j.jlumin.2018.11.028

APA

Cherkova, S. G., Volodin, V. A., Skuratov, V. A., Stoffel, M., Rinnert, H., & Vergnat, M. (2019). Light-emitting defects formed in GeO/SiO2 heterostructures with assistance of swift heavy ions. Journal of Luminescence, 207, 209-212. https://doi.org/10.1016/j.jlumin.2018.11.028

Vancouver

Cherkova SG, Volodin VA, Skuratov VA, Stoffel M, Rinnert H, Vergnat M. Light-emitting defects formed in GeO/SiO2 heterostructures with assistance of swift heavy ions. Journal of Luminescence. 2019 Mar 1;207:209-212. doi: 10.1016/j.jlumin.2018.11.028

Author

Cherkova, S. G. ; Volodin, V. A. ; Skuratov, V. A. et al. / Light-emitting defects formed in GeO/SiO2 heterostructures with assistance of swift heavy ions. In: Journal of Luminescence. 2019 ; Vol. 207. pp. 209-212.

BibTeX

@article{79b22fe6746f47fc9459bb1af7e2f637,
title = "Light-emitting defects formed in GeO/SiO2 heterostructures with assistance of swift heavy ions",
abstract = "Germanium suboxide films and GeO/SiO2 multilayer heterostructures deposited onto Si(001) substrates using evaporation in high vacuum were modified using irradiation of 167 MeV Xe+26 ions with fluences varying from 1011 to 1013 cm−2. According to Raman spectroscopy data, the swift heavy ion irradiation does not lead to the expected decomposition of germanium suboxide in germanium nanoclusters and GeO2. Infrared absorption spectroscopy measurements show that under irradiation the GeO/SiO2 layers were intermixed with formation of Ge-O-Si bonds. We report strong photoluminescence in the visible range at room temperature, which is most probably due to Ge-related defect-induced radiative transitions. Moreover, a new infrared luminescence band (~0.8 eV) was observed in irradiated structures, which can be related to defects or defects complexes in GexSiyO2 glass.",
keywords = "Defects, Ge oxides, GeSiO glasses, Luminescence, Swift heavy ions, OPTICAL-PROPERTIES, VISIBLE PHOTOLUMINESCENCE, GE NANOCRYSTALS, RADIATION, IRRADIATION, QUANTUM-CONFINEMENT, Ge(x)Si(y)O(2 )glasses, GERMANIUM OXIDES",
author = "Cherkova, {S. G.} and Volodin, {V. A.} and Skuratov, {V. A.} and M. Stoffel and H. Rinnert and M. Vergnat",
year = "2019",
month = mar,
day = "1",
doi = "10.1016/j.jlumin.2018.11.028",
language = "English",
volume = "207",
pages = "209--212",
journal = "Journal of Luminescence",
issn = "0022-2313",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Light-emitting defects formed in GeO/SiO2 heterostructures with assistance of swift heavy ions

AU - Cherkova, S. G.

AU - Volodin, V. A.

AU - Skuratov, V. A.

AU - Stoffel, M.

AU - Rinnert, H.

AU - Vergnat, M.

PY - 2019/3/1

Y1 - 2019/3/1

N2 - Germanium suboxide films and GeO/SiO2 multilayer heterostructures deposited onto Si(001) substrates using evaporation in high vacuum were modified using irradiation of 167 MeV Xe+26 ions with fluences varying from 1011 to 1013 cm−2. According to Raman spectroscopy data, the swift heavy ion irradiation does not lead to the expected decomposition of germanium suboxide in germanium nanoclusters and GeO2. Infrared absorption spectroscopy measurements show that under irradiation the GeO/SiO2 layers were intermixed with formation of Ge-O-Si bonds. We report strong photoluminescence in the visible range at room temperature, which is most probably due to Ge-related defect-induced radiative transitions. Moreover, a new infrared luminescence band (~0.8 eV) was observed in irradiated structures, which can be related to defects or defects complexes in GexSiyO2 glass.

AB - Germanium suboxide films and GeO/SiO2 multilayer heterostructures deposited onto Si(001) substrates using evaporation in high vacuum were modified using irradiation of 167 MeV Xe+26 ions with fluences varying from 1011 to 1013 cm−2. According to Raman spectroscopy data, the swift heavy ion irradiation does not lead to the expected decomposition of germanium suboxide in germanium nanoclusters and GeO2. Infrared absorption spectroscopy measurements show that under irradiation the GeO/SiO2 layers were intermixed with formation of Ge-O-Si bonds. We report strong photoluminescence in the visible range at room temperature, which is most probably due to Ge-related defect-induced radiative transitions. Moreover, a new infrared luminescence band (~0.8 eV) was observed in irradiated structures, which can be related to defects or defects complexes in GexSiyO2 glass.

KW - Defects

KW - Ge oxides

KW - GeSiO glasses

KW - Luminescence

KW - Swift heavy ions

KW - OPTICAL-PROPERTIES

KW - VISIBLE PHOTOLUMINESCENCE

KW - GE NANOCRYSTALS

KW - RADIATION

KW - IRRADIATION

KW - QUANTUM-CONFINEMENT

KW - Ge(x)Si(y)O(2 )glasses

KW - GERMANIUM OXIDES

UR - http://www.scopus.com/inward/record.url?scp=85056908683&partnerID=8YFLogxK

U2 - 10.1016/j.jlumin.2018.11.028

DO - 10.1016/j.jlumin.2018.11.028

M3 - Article

AN - SCOPUS:85056908683

VL - 207

SP - 209

EP - 212

JO - Journal of Luminescence

JF - Journal of Luminescence

SN - 0022-2313

ER -

ID: 18069187