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Kelvin force and Raman microscopies of flat SiGe structures with different compositions grown on Si(111) at high temperatures. / Shklyaev, A. A.; Bolotov, L.; Poborchii, V. et al.
In: Materials Science in Semiconductor Processing, Vol. 83, 15.08.2018, p. 107-114.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Kelvin force and Raman microscopies of flat SiGe structures with different compositions grown on Si(111) at high temperatures
AU - Shklyaev, A. A.
AU - Bolotov, L.
AU - Poborchii, V.
AU - Tada, T.
AU - Romanyuk, K. N.
N1 - Publisher Copyright: © 2018 Elsevier Ltd
PY - 2018/8/15
Y1 - 2018/8/15
N2 - The Ge deposition on Si(111) at the very high temperature of 900 °C is accompanied by an intense Si-Ge interdiffusion and leads to the formation of three-dimensional (3D) structures, such as flat islands and lateral nanowires located on wide atomically flat (111) terraces with high atomic steps at their edges. The use of Raman spectroscopy with high spatial resolution shows that the surface areas with different 3D structures have different Ge contents from about 0.04–0.10. The Si substrate under the SiGe surface layers is weakly strained, while the substrate areas around SiGe island edges display a relatively strong compression. The areas with different Ge contents form type II heterostructures in the surface plane. The Kelvin force microscopy (KFM) data reveal that the surface potential was maximal and, hence, the Ge content was minimal in the terrace areas located near 3D SiGe structures, indicating the presence of the solid-state dewetting effect. The spatial positions of maximal KFM potentials coincide with the heterojunction positions. The results demonstrate the correlation between the Ge concentration and the KFM potential that allows mapping the composition with a high KFM spatial resolution.
AB - The Ge deposition on Si(111) at the very high temperature of 900 °C is accompanied by an intense Si-Ge interdiffusion and leads to the formation of three-dimensional (3D) structures, such as flat islands and lateral nanowires located on wide atomically flat (111) terraces with high atomic steps at their edges. The use of Raman spectroscopy with high spatial resolution shows that the surface areas with different 3D structures have different Ge contents from about 0.04–0.10. The Si substrate under the SiGe surface layers is weakly strained, while the substrate areas around SiGe island edges display a relatively strong compression. The areas with different Ge contents form type II heterostructures in the surface plane. The Kelvin force microscopy (KFM) data reveal that the surface potential was maximal and, hence, the Ge content was minimal in the terrace areas located near 3D SiGe structures, indicating the presence of the solid-state dewetting effect. The spatial positions of maximal KFM potentials coincide with the heterojunction positions. The results demonstrate the correlation between the Ge concentration and the KFM potential that allows mapping the composition with a high KFM spatial resolution.
KW - High-temperature growth
KW - Kelvin force microscopy
KW - Lateral Si/Ge heterostructures
KW - Raman microscopy
KW - Surface potential distribution
KW - HETEROSTRUCTURES
KW - GRAPHENE
KW - SI(100)
KW - GERMANIUM
KW - SPECTROSCOPY
KW - GE DEPOSITION
KW - LATERAL NANOWIRES
KW - STRESS
KW - STRAIN
KW - ISLAND FORMATION
UR - http://www.scopus.com/inward/record.url?scp=85046080436&partnerID=8YFLogxK
U2 - 10.1016/j.mssp.2018.04.026
DO - 10.1016/j.mssp.2018.04.026
M3 - Article
AN - SCOPUS:85046080436
VL - 83
SP - 107
EP - 114
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
SN - 1369-8001
ER -
ID: 12916429