TY - JOUR

T1 - Kelvin force and Raman microscopies of flat SiGe structures with different compositions grown on Si(111) at high temperatures

AU - Shklyaev, A. A.

AU - Bolotov, L.

AU - Poborchii, V.

AU - Tada, T.

AU - Romanyuk, K. N.

N1 - Publisher Copyright: © 2018 Elsevier Ltd

PY - 2018/8/15

Y1 - 2018/8/15

N2 - The Ge deposition on Si(111) at the very high temperature of 900 °C is accompanied by an intense Si-Ge interdiffusion and leads to the formation of three-dimensional (3D) structures, such as flat islands and lateral nanowires located on wide atomically flat (111) terraces with high atomic steps at their edges. The use of Raman spectroscopy with high spatial resolution shows that the surface areas with different 3D structures have different Ge contents from about 0.04–0.10. The Si substrate under the SiGe surface layers is weakly strained, while the substrate areas around SiGe island edges display a relatively strong compression. The areas with different Ge contents form type II heterostructures in the surface plane. The Kelvin force microscopy (KFM) data reveal that the surface potential was maximal and, hence, the Ge content was minimal in the terrace areas located near 3D SiGe structures, indicating the presence of the solid-state dewetting effect. The spatial positions of maximal KFM potentials coincide with the heterojunction positions. The results demonstrate the correlation between the Ge concentration and the KFM potential that allows mapping the composition with a high KFM spatial resolution.

AB - The Ge deposition on Si(111) at the very high temperature of 900 °C is accompanied by an intense Si-Ge interdiffusion and leads to the formation of three-dimensional (3D) structures, such as flat islands and lateral nanowires located on wide atomically flat (111) terraces with high atomic steps at their edges. The use of Raman spectroscopy with high spatial resolution shows that the surface areas with different 3D structures have different Ge contents from about 0.04–0.10. The Si substrate under the SiGe surface layers is weakly strained, while the substrate areas around SiGe island edges display a relatively strong compression. The areas with different Ge contents form type II heterostructures in the surface plane. The Kelvin force microscopy (KFM) data reveal that the surface potential was maximal and, hence, the Ge content was minimal in the terrace areas located near 3D SiGe structures, indicating the presence of the solid-state dewetting effect. The spatial positions of maximal KFM potentials coincide with the heterojunction positions. The results demonstrate the correlation between the Ge concentration and the KFM potential that allows mapping the composition with a high KFM spatial resolution.

KW - High-temperature growth

KW - Kelvin force microscopy

KW - Lateral Si/Ge heterostructures

KW - Raman microscopy

KW - Surface potential distribution

KW - HETEROSTRUCTURES

KW - GRAPHENE

KW - SI(100)

KW - GERMANIUM

KW - SPECTROSCOPY

KW - GE DEPOSITION

KW - LATERAL NANOWIRES

KW - STRESS

KW - STRAIN

KW - ISLAND FORMATION

UR - http://www.scopus.com/inward/record.url?scp=85046080436&partnerID=8YFLogxK

U2 - 10.1016/j.mssp.2018.04.026

DO - 10.1016/j.mssp.2018.04.026

M3 - Article

AN - SCOPUS:85046080436

VL - 83

SP - 107

EP - 114

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

SN - 1369-8001

ER -