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Influence of substrate nitridation conditions and buffer layer structures on the crack-free GaN layers on silicon substrate grown by ammonia-assisted molecular beam epitaxy. / Malin, Timur; Maidebura, Yan; Mansurov, Vladimir et al.

In: Thin Solid Films, Vol. 791, 140246, 29.02.2024.

Research output: Contribution to journal › Article › peer-review

Harvard

Malin, T, Maidebura, Y, Mansurov, V, Gavrilova, T, Gutakovsky, A, Vdovin, V, Ponomarev, S, Loshkarev, I, Osinnykh, I, Volodin, V, Milakhin, D & Zhuravlev, K 2024, 'Influence of substrate nitridation conditions and buffer layer structures on the crack-free GaN layers on silicon substrate grown by ammonia-assisted molecular beam epitaxy', Thin Solid Films, vol. 791, 140246. https://doi.org/10.1016/j.tsf.2024.140246

APA

Malin, T., Maidebura, Y., Mansurov, V., Gavrilova, T., Gutakovsky, A., Vdovin, V., Ponomarev, S., Loshkarev, I., Osinnykh, I., Volodin, V., Milakhin, D., & Zhuravlev, K. (2024). Influence of substrate nitridation conditions and buffer layer structures on the crack-free GaN layers on silicon substrate grown by ammonia-assisted molecular beam epitaxy. Thin Solid Films, 791, [140246]. https://doi.org/10.1016/j.tsf.2024.140246

Vancouver

Malin T, Maidebura Y, Mansurov V, Gavrilova T, Gutakovsky A, Vdovin V et al. Influence of substrate nitridation conditions and buffer layer structures on the crack-free GaN layers on silicon substrate grown by ammonia-assisted molecular beam epitaxy. Thin Solid Films. 2024 Feb 29;791:140246. doi: 10.1016/j.tsf.2024.140246

Author

Malin, Timur ; Maidebura, Yan ; Mansurov, Vladimir et al. / Influence of substrate nitridation conditions and buffer layer structures on the crack-free GaN layers on silicon substrate grown by ammonia-assisted molecular beam epitaxy. In: Thin Solid Films. 2024 ; Vol. 791.

BibTeX

@article{232186d152b441049987c32728653343,
title = "Influence of substrate nitridation conditions and buffer layer structures on the crack-free GaN layers on silicon substrate grown by ammonia-assisted molecular beam epitaxy",
abstract = "It is shown that the nitridation conditions of the silicon substrate are not less important than the structure of the buffer layer in influencing the crack formation in GaN-on-Si layers grown by ammonia-assisted molecular beam epitaxy (NH3-MBE). Furthermore, the morphology of the GaN layers is independent of the buffer layer structure, but is determined by the GaN growth conditions. Nevertheless, the use of step-graded AlGaN buffer layers instead of a buffer layer with an inserted AlN layer leads to a higher crystalline quality of the crack-free GaN layers and to lower residual tensile stresses in them.",
keywords = "Ammonia-assisted molecular beam epitaxy, Biaxial stress, Buffer structure, Gallium nitride on silicon, Silicon nitridation, Surface cracks",
author = "Timur Malin and Yan Maidebura and Vladimir Mansurov and Tatyana Gavrilova and Anton Gutakovsky and Vladimir Vdovin and Sergey Ponomarev and Ivan Loshkarev and Igor Osinnykh and Vladimir Volodin and Denis Milakhin and Konstantin Zhuravlev",
note = "This work was supported by the Ministry of Science and Higher Education of the Russian Federation within the state task FWGW-2022-0015 “Ammonia molecular beam epitaxy of GaN heterostructures on silicon substrates for power and microwave transistors”.",
year = "2024",
month = feb,
day = "29",
doi = "10.1016/j.tsf.2024.140246",
language = "English",
volume = "791",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Influence of substrate nitridation conditions and buffer layer structures on the crack-free GaN layers on silicon substrate grown by ammonia-assisted molecular beam epitaxy

AU - Malin, Timur

AU - Maidebura, Yan

AU - Mansurov, Vladimir

AU - Gavrilova, Tatyana

AU - Gutakovsky, Anton

AU - Vdovin, Vladimir

AU - Ponomarev, Sergey

AU - Loshkarev, Ivan

AU - Osinnykh, Igor

AU - Volodin, Vladimir

AU - Milakhin, Denis

AU - Zhuravlev, Konstantin

N1 - This work was supported by the Ministry of Science and Higher Education of the Russian Federation within the state task FWGW-2022-0015 “Ammonia molecular beam epitaxy of GaN heterostructures on silicon substrates for power and microwave transistors”.

PY - 2024/2/29

Y1 - 2024/2/29

N2 - It is shown that the nitridation conditions of the silicon substrate are not less important than the structure of the buffer layer in influencing the crack formation in GaN-on-Si layers grown by ammonia-assisted molecular beam epitaxy (NH3-MBE). Furthermore, the morphology of the GaN layers is independent of the buffer layer structure, but is determined by the GaN growth conditions. Nevertheless, the use of step-graded AlGaN buffer layers instead of a buffer layer with an inserted AlN layer leads to a higher crystalline quality of the crack-free GaN layers and to lower residual tensile stresses in them.

AB - It is shown that the nitridation conditions of the silicon substrate are not less important than the structure of the buffer layer in influencing the crack formation in GaN-on-Si layers grown by ammonia-assisted molecular beam epitaxy (NH3-MBE). Furthermore, the morphology of the GaN layers is independent of the buffer layer structure, but is determined by the GaN growth conditions. Nevertheless, the use of step-graded AlGaN buffer layers instead of a buffer layer with an inserted AlN layer leads to a higher crystalline quality of the crack-free GaN layers and to lower residual tensile stresses in them.

KW - Ammonia-assisted molecular beam epitaxy

KW - Biaxial stress

KW - Buffer structure

KW - Gallium nitride on silicon

KW - Silicon nitridation

KW - Surface cracks

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85183999499&origin=inward&txGid=768c800b4afa33ecff53365d319f5832

UR - https://www.mendeley.com/catalogue/3bd42071-1601-39af-9a6f-a0a2ab8138a6/

U2 - 10.1016/j.tsf.2024.140246

DO - 10.1016/j.tsf.2024.140246

M3 - Article

VL - 791

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

M1 - 140246

ER -

ID: 61149819