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Influence of quantizing magnetic field and Rashba effect on indium arsenide metal-oxide-semiconductor structure accumulation capacitance. / Kovchavtsev, A. P.; Aksenov, M. S.; Tsarenko, A. V. et al.

In: Journal of Applied Physics, Vol. 123, No. 17, 173901, 07.05.2018.

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Kovchavtsev AP, Aksenov MS, Tsarenko AV, Nastovjak AE, Pogosov AG, Pokhabov DA et al. Influence of quantizing magnetic field and Rashba effect on indium arsenide metal-oxide-semiconductor structure accumulation capacitance. Journal of Applied Physics. 2018 May 7;123(17):173901. doi: 10.1063/1.5018670

Author

Kovchavtsev, A. P. ; Aksenov, M. S. ; Tsarenko, A. V. et al. / Influence of quantizing magnetic field and Rashba effect on indium arsenide metal-oxide-semiconductor structure accumulation capacitance. In: Journal of Applied Physics. 2018 ; Vol. 123, No. 17.

BibTeX

@article{d8abb81229ef43eabb8a2345e0025e10,
title = "Influence of quantizing magnetic field and Rashba effect on indium arsenide metal-oxide-semiconductor structure accumulation capacitance",
abstract = "The accumulation capacitance oscillations behavior in the n-InAs metal-oxide-semiconductor structures with different densities of the built-in charge (Dbc) and the interface traps (Dit) at temperature 4.2 K in the magnetic field (B) 2-10 T, directed perpendicular to the semiconductor-dielectric interface, is studied. A decrease in the oscillation frequency and an increase in the capacitance oscillation amplitude are observed with the increase in B. At the same time, for a certain surface accumulation band bending, the influence of the Rashba effect, which is expressed in the oscillations decay and breakdown, is traced. The experimental capacitance-voltage curves are in a good agreement with the numeric simulation results of the self-consistent solution of Schr{\"o}dinger and Poisson equations in the magnetic field, taking into account the quantization, nonparabolicity of dispersion law, and Fermi-Dirac electron statistics, with the allowance for the Rashba effect. The Landau quantum level broadening in a two-dimensional electron gas (Lorentzian-shaped density of states), due to the electron scattering mechanism, linearly depends on the magnetic field. The correlation between the interface electronic properties and the characteristic scattering times was established.",
keywords = "SURFACE, PASSIVATION",
author = "Kovchavtsev, {A. P.} and Aksenov, {M. S.} and Tsarenko, {A. V.} and Nastovjak, {A. E.} and Pogosov, {A. G.} and Pokhabov, {D. A.} and Tereshchenko, {O. E.} and Valisheva, {N. A.}",
year = "2018",
month = may,
day = "7",
doi = "10.1063/1.5018670",
language = "English",
volume = "123",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "AMER INST PHYSICS",
number = "17",

}

RIS

TY - JOUR

T1 - Influence of quantizing magnetic field and Rashba effect on indium arsenide metal-oxide-semiconductor structure accumulation capacitance

AU - Kovchavtsev, A. P.

AU - Aksenov, M. S.

AU - Tsarenko, A. V.

AU - Nastovjak, A. E.

AU - Pogosov, A. G.

AU - Pokhabov, D. A.

AU - Tereshchenko, O. E.

AU - Valisheva, N. A.

PY - 2018/5/7

Y1 - 2018/5/7

N2 - The accumulation capacitance oscillations behavior in the n-InAs metal-oxide-semiconductor structures with different densities of the built-in charge (Dbc) and the interface traps (Dit) at temperature 4.2 K in the magnetic field (B) 2-10 T, directed perpendicular to the semiconductor-dielectric interface, is studied. A decrease in the oscillation frequency and an increase in the capacitance oscillation amplitude are observed with the increase in B. At the same time, for a certain surface accumulation band bending, the influence of the Rashba effect, which is expressed in the oscillations decay and breakdown, is traced. The experimental capacitance-voltage curves are in a good agreement with the numeric simulation results of the self-consistent solution of Schrödinger and Poisson equations in the magnetic field, taking into account the quantization, nonparabolicity of dispersion law, and Fermi-Dirac electron statistics, with the allowance for the Rashba effect. The Landau quantum level broadening in a two-dimensional electron gas (Lorentzian-shaped density of states), due to the electron scattering mechanism, linearly depends on the magnetic field. The correlation between the interface electronic properties and the characteristic scattering times was established.

AB - The accumulation capacitance oscillations behavior in the n-InAs metal-oxide-semiconductor structures with different densities of the built-in charge (Dbc) and the interface traps (Dit) at temperature 4.2 K in the magnetic field (B) 2-10 T, directed perpendicular to the semiconductor-dielectric interface, is studied. A decrease in the oscillation frequency and an increase in the capacitance oscillation amplitude are observed with the increase in B. At the same time, for a certain surface accumulation band bending, the influence of the Rashba effect, which is expressed in the oscillations decay and breakdown, is traced. The experimental capacitance-voltage curves are in a good agreement with the numeric simulation results of the self-consistent solution of Schrödinger and Poisson equations in the magnetic field, taking into account the quantization, nonparabolicity of dispersion law, and Fermi-Dirac electron statistics, with the allowance for the Rashba effect. The Landau quantum level broadening in a two-dimensional electron gas (Lorentzian-shaped density of states), due to the electron scattering mechanism, linearly depends on the magnetic field. The correlation between the interface electronic properties and the characteristic scattering times was established.

KW - SURFACE

KW - PASSIVATION

UR - http://www.scopus.com/inward/record.url?scp=85046667792&partnerID=8YFLogxK

U2 - 10.1063/1.5018670

DO - 10.1063/1.5018670

M3 - Article

AN - SCOPUS:85046667792

VL - 123

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 17

M1 - 173901

ER -

ID: 13333020