TY - JOUR

T1 - Influence of Ge nanolayers on the resistive switching effect in amorphous hydrogenated silicon based structures

AU - Y. Cheng, null

AU - Камаев, Геннадий Николаевич

AU - Попов, А. В.

AU - Володин, Владимир Алексеевич

N1 - This study was funded by Ministry of Science and Higher Education of the Russia Federation, projects FSUS-2024-0020, FWGW-2025-0023 and FFNN-2022-0018. Supported by Program of China Scholarship Council, Grant No. 202310100100. Influence of Ge nanolayers on the resistive switching effect in amorphous hydrogenated silicon based structures / Y. Cheng, G. N. Kamaev, A. A. Popov, V. A. Volodin // St. Petersburg State Polytechnical University Journal. Physics and Mathematics. – 2025. – Vol. 18, No. S1.1. – P. 134-139. – DOI 10.18721/JPM.181.123.

PY - 2025/5

Y1 - 2025/5

N2 - Resistive switchings in p-i-n structures based on amorphous hydrogenated silicon both with and without inclusions of Ge nanolayers in the i-layer were studied. The structure of the samples was studied using Raman spectroscopy. It was shown that all layers were amorphous and contained up to 35 atomic % of hydrogen. In the structures with five 6 nm thick Ge nanolayers embedded in the i-layer, separated by layers of undoped 15 nm thick amorphous silicon, the resistive switching effects are stable and reproducible in the bipolar mode from a high-resistance state to a low-resistance state and backwards. In this case, the resistive switchings occur through several intermediate stages. This type of switching is typical for multi-bit or analog memristors. It was shown that the intermediate states have high stability. The memory window observed in the experiments grows linearly with increasing limiting current with good current stability in the OFF state. Thus, the studied p-i-n structures can be used in memristors.

AB - Resistive switchings in p-i-n structures based on amorphous hydrogenated silicon both with and without inclusions of Ge nanolayers in the i-layer were studied. The structure of the samples was studied using Raman spectroscopy. It was shown that all layers were amorphous and contained up to 35 atomic % of hydrogen. In the structures with five 6 nm thick Ge nanolayers embedded in the i-layer, separated by layers of undoped 15 nm thick amorphous silicon, the resistive switching effects are stable and reproducible in the bipolar mode from a high-resistance state to a low-resistance state and backwards. In this case, the resistive switchings occur through several intermediate stages. This type of switching is typical for multi-bit or analog memristors. It was shown that the intermediate states have high stability. The memory window observed in the experiments grows linearly with increasing limiting current with good current stability in the OFF state. Thus, the studied p-i-n structures can be used in memristors.

KW - AMORPHOUS SILICON

KW - GERMANIUM NANOLAYERS

KW - MEMRISTOR

KW - MULTILAYER STRUCTURE

KW - P-I-N STRUCTURE

UR - https://physmath.spbstu.ru/en/article/2025.79.23/

UR - https://elibrary.ru/item.asp?id=82544508

U2 - 10.18721/JPM.181.123

DO - 10.18721/JPM.181.123

M3 - Article

VL - 18

SP - 159

JO - Научно-технические ведомости СПбГПУ. Физико-математические науки Cанкт-Петербургский политехнический университет Петра Великого ru

JF - Научно-технические ведомости СПбГПУ. Физико-математические науки Cанкт-Петербургский политехнический университет Петра Великого ru

SN - 2304-9782

IS - 1.1

ER -