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Influence of a silicon impurity on growth of diamond crystals in the Mg-C system. / Khokhryakov, Alexander F.; Palyanov, Yuri N.; Borzdov, Yuri M. et al.

In: Diamond and Related Materials, Vol. 87, 01.08.2018, p. 27-34.

Research output: Contribution to journal › Article › peer-review

Harvard

Khokhryakov, AF, Palyanov, YN, Borzdov, YM, Kozhukhov, AS & Sheglov, DV 2018, 'Influence of a silicon impurity on growth of diamond crystals in the Mg-C system', Diamond and Related Materials, vol. 87, pp. 27-34. https://doi.org/10.1016/j.diamond.2018.05.006

APA

Khokhryakov, A. F., Palyanov, Y. N., Borzdov, Y. M., Kozhukhov, A. S., & Sheglov, D. V. (2018). Influence of a silicon impurity on growth of diamond crystals in the Mg-C system. Diamond and Related Materials, 87, 27-34. https://doi.org/10.1016/j.diamond.2018.05.006

Vancouver

Khokhryakov AF, Palyanov YN, Borzdov YM, Kozhukhov AS, Sheglov DV. Influence of a silicon impurity on growth of diamond crystals in the Mg-C system. Diamond and Related Materials. 2018 Aug 1;87:27-34. doi: 10.1016/j.diamond.2018.05.006

Author

Khokhryakov, Alexander F. ; Palyanov, Yuri N. ; Borzdov, Yuri M. et al. / Influence of a silicon impurity on growth of diamond crystals in the Mg-C system. In: Diamond and Related Materials. 2018 ; Vol. 87. pp. 27-34.

BibTeX

@article{f6d72c1c52264ba5939302bb063b9ae0,
title = "Influence of a silicon impurity on growth of diamond crystals in the Mg-C system",
abstract = "This article reports a study of the morphology of diamond crystals grown at 7.0 GPa and 1800 °C in the Mg-C system with the addition of silicon in an amount of 0.5 wt%. Step patterns on {111} and {100} faces were studied in a wide range of magnifications using optical microscopy (DIC), scanning electron microscopy (SEM), and atomic force microscopy (AFM). Morphological studies revealed that a reduction in the growth rate and a change in the morphological significance of the {100} and {111} faces were associated with adsorption of a mobile impurity (silicon) leading to poisoning of kinks and (or) steps. This leads to roughing of the faces and formation of macrosteps as well as 2D and 3D nucleation islands. At a silicon concentration of 1.0 wt% or more, immobile impurity particles are apparently formed on macrostep terraces, and growth inhibition occurs according to the Cabrera-Vermilyea model.",
keywords = "High pressure high temperature (HTHP), Impurity adsorption, Morphology, Surface microscopy, Synthetic diamond, HIGH-PRESSURE, 100 FACES, AQUEOUS-SOLUTION, SURFACES",
author = "Khokhryakov, {Alexander F.} and Palyanov, {Yuri N.} and Borzdov, {Yuri M.} and Kozhukhov, {Anton S.} and Sheglov, {Dmitriy V.}",
year = "2018",
month = aug,
day = "1",
doi = "10.1016/j.diamond.2018.05.006",
language = "English",
volume = "87",
pages = "27--34",
journal = "Diamond and Related Materials",
issn = "0925-9635",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Influence of a silicon impurity on growth of diamond crystals in the Mg-C system

AU - Khokhryakov, Alexander F.

AU - Palyanov, Yuri N.

AU - Borzdov, Yuri M.

AU - Kozhukhov, Anton S.

AU - Sheglov, Dmitriy V.

PY - 2018/8/1

Y1 - 2018/8/1

N2 - This article reports a study of the morphology of diamond crystals grown at 7.0 GPa and 1800 °C in the Mg-C system with the addition of silicon in an amount of 0.5 wt%. Step patterns on {111} and {100} faces were studied in a wide range of magnifications using optical microscopy (DIC), scanning electron microscopy (SEM), and atomic force microscopy (AFM). Morphological studies revealed that a reduction in the growth rate and a change in the morphological significance of the {100} and {111} faces were associated with adsorption of a mobile impurity (silicon) leading to poisoning of kinks and (or) steps. This leads to roughing of the faces and formation of macrosteps as well as 2D and 3D nucleation islands. At a silicon concentration of 1.0 wt% or more, immobile impurity particles are apparently formed on macrostep terraces, and growth inhibition occurs according to the Cabrera-Vermilyea model.

AB - This article reports a study of the morphology of diamond crystals grown at 7.0 GPa and 1800 °C in the Mg-C system with the addition of silicon in an amount of 0.5 wt%. Step patterns on {111} and {100} faces were studied in a wide range of magnifications using optical microscopy (DIC), scanning electron microscopy (SEM), and atomic force microscopy (AFM). Morphological studies revealed that a reduction in the growth rate and a change in the morphological significance of the {100} and {111} faces were associated with adsorption of a mobile impurity (silicon) leading to poisoning of kinks and (or) steps. This leads to roughing of the faces and formation of macrosteps as well as 2D and 3D nucleation islands. At a silicon concentration of 1.0 wt% or more, immobile impurity particles are apparently formed on macrostep terraces, and growth inhibition occurs according to the Cabrera-Vermilyea model.

KW - High pressure high temperature (HTHP)

KW - Impurity adsorption

KW - Morphology

KW - Surface microscopy

KW - Synthetic diamond

KW - HIGH-PRESSURE

KW - 100 FACES

KW - AQUEOUS-SOLUTION

KW - SURFACES

UR - http://www.scopus.com/inward/record.url?scp=85046992959&partnerID=8YFLogxK

U2 - 10.1016/j.diamond.2018.05.006

DO - 10.1016/j.diamond.2018.05.006

M3 - Article

AN - SCOPUS:85046992959

VL - 87

SP - 27

EP - 34

JO - Diamond and Related Materials

JF - Diamond and Related Materials

SN - 0925-9635

ER -

ID: 13468870