Influence of a silicon impurity on growth of diamond crystals in the Mg-C system

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	27-34
Number of pages	8
Journal	Diamond and Related Materials
Volume	87
DOIs	https://doi.org/10.1016/j.diamond.2018.05.006
Publication status	Published - 1 Aug 2018

High pressure high temperature (HTHP), Impurity adsorption, Morphology, Surface microscopy, Synthetic diamond, HIGH-PRESSURE, 100 FACES, AQUEOUS-SOLUTION, SURFACES

ID: 13468870