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Influence of a Low-Temperature GaAs Dislocation Filter on the Perfection of GaAs/Si Layers. / Abramkin, D. S.; Petrushkov, M. O.; Emel’yanov, E. A. et al.

In: Optoelectronics, Instrumentation and Data Processing, Vol. 54, No. 2, 01.03.2018, p. 181-186.

Research output: Contribution to journal › Article › peer-review

Harvard

Abramkin, DS, Petrushkov, MO, Emel’yanov, EA, Putyato, MA, Semyagin, BR, Vasev, AV, Esin, MY, Loshkarev, ID, Gutakovskii, AK, Preobrazhenskii, VV & Shamirzaev, TS 2018, 'Influence of a Low-Temperature GaAs Dislocation Filter on the Perfection of GaAs/Si Layers', Optoelectronics, Instrumentation and Data Processing, vol. 54, no. 2, pp. 181-186. https://doi.org/10.3103/S8756699018020103

APA

Abramkin, D. S., Petrushkov, M. O., Emel’yanov, E. A., Putyato, M. A., Semyagin, B. R., Vasev, A. V., Esin, M. Y., Loshkarev, I. D., Gutakovskii, A. K., Preobrazhenskii, V. V., & Shamirzaev, T. S. (2018). Influence of a Low-Temperature GaAs Dislocation Filter on the Perfection of GaAs/Si Layers. Optoelectronics, Instrumentation and Data Processing, 54(2), 181-186. https://doi.org/10.3103/S8756699018020103

Vancouver

Abramkin DS, Petrushkov MO, Emel’yanov EA, Putyato MA, Semyagin BR, Vasev AV et al. Influence of a Low-Temperature GaAs Dislocation Filter on the Perfection of GaAs/Si Layers. Optoelectronics, Instrumentation and Data Processing. 2018 Mar 1;54(2):181-186. doi: 10.3103/S8756699018020103

Author

Abramkin, D. S. ; Petrushkov, M. O. ; Emel’yanov, E. A. et al. / Influence of a Low-Temperature GaAs Dislocation Filter on the Perfection of GaAs/Si Layers. In: Optoelectronics, Instrumentation and Data Processing. 2018 ; Vol. 54, No. 2. pp. 181-186.

BibTeX

@article{b5148a72e813420bb9aa5a51c7acb859,
title = "Influence of a Low-Temperature GaAs Dislocation Filter on the Perfection of GaAs/Si Layers",
abstract = "The influence of dislocation filters based on low-temperature layers (LT) of GaAs and postgrowth annealing on the perfection of GaAs/Si heterostructures is discussed. It is shown that LT-GaAs layers reduce the density of threading dislocations and surface roughness. Post-growth annealing at a temperature of 650 °C reduces the concentration of nonradiative recombination centers in GaAs/Si layers to a level close to the level in GaAs layers grown on a matched substrate.",
keywords = "dislocation filter, epitaxy, low-temperature GaAs, GROWN GAAS, FILMS, COEFFICIENT, MOLECULAR-BEAM EPITAXY, ON-SI, DENSITY REDUCTION, MISFIT, MOCVD, DEPENDENCE",
author = "Abramkin, {D. S.} and Petrushkov, {M. O.} and Emel{\textquoteright}yanov, {E. A.} and Putyato, {M. A.} and Semyagin, {B. R.} and Vasev, {A. V.} and Esin, {M. Yu} and Loshkarev, {I. D.} and Gutakovskii, {A. K.} and Preobrazhenskii, {V. V.} and Shamirzaev, {T. S.}",
year = "2018",
month = mar,
day = "1",
doi = "10.3103/S8756699018020103",
language = "English",
volume = "54",
pages = "181--186",
journal = "Optoelectronics, Instrumentation and Data Processing",
issn = "8756-6990",
publisher = "Allerton Press Inc.",
number = "2",

}

RIS

TY - JOUR

T1 - Influence of a Low-Temperature GaAs Dislocation Filter on the Perfection of GaAs/Si Layers

AU - Abramkin, D. S.

AU - Petrushkov, M. O.

AU - Emel’yanov, E. A.

AU - Putyato, M. A.

AU - Semyagin, B. R.

AU - Vasev, A. V.

AU - Esin, M. Yu

AU - Loshkarev, I. D.

AU - Gutakovskii, A. K.

AU - Preobrazhenskii, V. V.

AU - Shamirzaev, T. S.

PY - 2018/3/1

Y1 - 2018/3/1

N2 - The influence of dislocation filters based on low-temperature layers (LT) of GaAs and postgrowth annealing on the perfection of GaAs/Si heterostructures is discussed. It is shown that LT-GaAs layers reduce the density of threading dislocations and surface roughness. Post-growth annealing at a temperature of 650 °C reduces the concentration of nonradiative recombination centers in GaAs/Si layers to a level close to the level in GaAs layers grown on a matched substrate.

AB - The influence of dislocation filters based on low-temperature layers (LT) of GaAs and postgrowth annealing on the perfection of GaAs/Si heterostructures is discussed. It is shown that LT-GaAs layers reduce the density of threading dislocations and surface roughness. Post-growth annealing at a temperature of 650 °C reduces the concentration of nonradiative recombination centers in GaAs/Si layers to a level close to the level in GaAs layers grown on a matched substrate.

KW - dislocation filter

KW - epitaxy

KW - low-temperature GaAs

KW - GROWN GAAS

KW - FILMS

KW - COEFFICIENT

KW - MOLECULAR-BEAM EPITAXY

KW - ON-SI

KW - DENSITY REDUCTION

KW - MISFIT

KW - MOCVD

KW - DEPENDENCE

UR - http://www.scopus.com/inward/record.url?scp=85048267429&partnerID=8YFLogxK

U2 - 10.3103/S8756699018020103

DO - 10.3103/S8756699018020103

M3 - Article

AN - SCOPUS:85048267429

VL - 54

SP - 181

EP - 186

JO - Optoelectronics, Instrumentation and Data Processing

JF - Optoelectronics, Instrumentation and Data Processing

SN - 8756-6990

IS - 2

ER -

ID: 13924771