Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Influence of a Low-Temperature GaAs Dislocation Filter on the Perfection of GaAs/Si Layers. / Abramkin, D. S.; Petrushkov, M. O.; Emel’yanov, E. A. и др.
в: Optoelectronics, Instrumentation and Data Processing, Том 54, № 2, 01.03.2018, стр. 181-186.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Influence of a Low-Temperature GaAs Dislocation Filter on the Perfection of GaAs/Si Layers
AU - Abramkin, D. S.
AU - Petrushkov, M. O.
AU - Emel’yanov, E. A.
AU - Putyato, M. A.
AU - Semyagin, B. R.
AU - Vasev, A. V.
AU - Esin, M. Yu
AU - Loshkarev, I. D.
AU - Gutakovskii, A. K.
AU - Preobrazhenskii, V. V.
AU - Shamirzaev, T. S.
PY - 2018/3/1
Y1 - 2018/3/1
N2 - The influence of dislocation filters based on low-temperature layers (LT) of GaAs and postgrowth annealing on the perfection of GaAs/Si heterostructures is discussed. It is shown that LT-GaAs layers reduce the density of threading dislocations and surface roughness. Post-growth annealing at a temperature of 650 °C reduces the concentration of nonradiative recombination centers in GaAs/Si layers to a level close to the level in GaAs layers grown on a matched substrate.
AB - The influence of dislocation filters based on low-temperature layers (LT) of GaAs and postgrowth annealing on the perfection of GaAs/Si heterostructures is discussed. It is shown that LT-GaAs layers reduce the density of threading dislocations and surface roughness. Post-growth annealing at a temperature of 650 °C reduces the concentration of nonradiative recombination centers in GaAs/Si layers to a level close to the level in GaAs layers grown on a matched substrate.
KW - dislocation filter
KW - epitaxy
KW - low-temperature GaAs
KW - GROWN GAAS
KW - FILMS
KW - COEFFICIENT
KW - MOLECULAR-BEAM EPITAXY
KW - ON-SI
KW - DENSITY REDUCTION
KW - MISFIT
KW - MOCVD
KW - DEPENDENCE
UR - http://www.scopus.com/inward/record.url?scp=85048267429&partnerID=8YFLogxK
U2 - 10.3103/S8756699018020103
DO - 10.3103/S8756699018020103
M3 - Article
AN - SCOPUS:85048267429
VL - 54
SP - 181
EP - 186
JO - Optoelectronics, Instrumentation and Data Processing
JF - Optoelectronics, Instrumentation and Data Processing
SN - 8756-6990
IS - 2
ER -
ID: 13924771