In situ Ellipsometric Control of Growth Processes of ZnTe and CdTe Buffer Layers in Technology of Molecular Beam Epitaxy of Mercury Cadmium Telluride › Research Explorer

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In situ Ellipsometric Control of Growth Processes of ZnTe and CdTe Buffer Layers in Technology of Molecular Beam Epitaxy of Mercury Cadmium Telluride

Research output: Contribution to journal › Article › peer-review

DOI

https://doi.org/10.1134/S1063782624010147
Final published version

V. A. Shvets
D. V. Marin
M. V. Yakushev
S. V. Rykhlitskii

Original language	English
Pages (from-to)	67-72
Number of pages	6
Journal	Semiconductors
Volume	58
Issue number	1
DOIs	https://doi.org/10.1134/S1063782624010147
Publication status	Published - Jan 2024

OECD FOS+WOS

1.03.UK PHYSICS, CONDENSED MATTER

ID: 61182935