TY - JOUR

T1 - Improved device distribution in high-performance sinx resistive random access memory via arsenic ion implantation

AU - Yen, Te Jui

AU - Chin, Albert

AU - Gritsenko, Vladimir

N1 - Funding Information: This research was funded by the Ministry of Science and Technology of Taiwan, project no. 107-2221-E-009-092-MY3. Publisher Copyright: © 2021 by the authors. Licensee MDPI, Basel, Switzerland.

PY - 2021/6

Y1 - 2021/6

N2 - Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiNx RRAM device is realized via arsenic ion (As+) implantation. Besides, the As+-implanted SiNx RRAM device exhibits much tighter cycle-to-cycle distribution than the nonimplanted device. The As+-im-planted SiNx device further exhibits excellent performance, which shows high stability and a large 1.73 × 103 resistance window at 85 °C retention for 104 s, and a large 103 resistance window after 105 cycles of the pulsed endurance test. The current–voltage characteristics of high-and low-resistance states were both analyzed as space-charge-limited conduction mechanism. From the simulated defect distribution in the SiNx layer, a microscopic model was established, and the formation and rup-ture of defect-conductive paths were proposed for the resistance switching behavior. Therefore, the reason for such high device performance can be attributed to the sufficient defects created by As+ implantation that leads to low forming and operation power.

AB - Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiNx RRAM device is realized via arsenic ion (As+) implantation. Besides, the As+-implanted SiNx RRAM device exhibits much tighter cycle-to-cycle distribution than the nonimplanted device. The As+-im-planted SiNx device further exhibits excellent performance, which shows high stability and a large 1.73 × 103 resistance window at 85 °C retention for 104 s, and a large 103 resistance window after 105 cycles of the pulsed endurance test. The current–voltage characteristics of high-and low-resistance states were both analyzed as space-charge-limited conduction mechanism. From the simulated defect distribution in the SiNx layer, a microscopic model was established, and the formation and rup-ture of defect-conductive paths were proposed for the resistance switching behavior. Therefore, the reason for such high device performance can be attributed to the sufficient defects created by As+ implantation that leads to low forming and operation power.

KW - Ion implantation

KW - Neuron mimicking device

KW - SiNx RRAM

UR - http://www.scopus.com/inward/record.url?scp=85106410752&partnerID=8YFLogxK

U2 - 10.3390/nano11061401

DO - 10.3390/nano11061401

M3 - Article

C2 - 34070624

AN - SCOPUS:85106410752

VL - 11

JO - Nanomaterials

JF - Nanomaterials

SN - 2079-4991

IS - 6

M1 - 1401

ER -