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Improved device distribution in high-performance sinx resistive random access memory via arsenic ion implantation. / Yen, Te Jui; Chin, Albert; Gritsenko, Vladimir.

In: Nanomaterials, Vol. 11, No. 6, 1401, 06.2021.

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Yen TJ, Chin A, Gritsenko V. Improved device distribution in high-performance sinx resistive random access memory via arsenic ion implantation. Nanomaterials. 2021 Jun;11(6):1401. doi: 10.3390/nano11061401

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Yen, Te Jui ; Chin, Albert ; Gritsenko, Vladimir. / Improved device distribution in high-performance sinx resistive random access memory via arsenic ion implantation. In: Nanomaterials. 2021 ; Vol. 11, No. 6.

BibTeX

@article{a984941fc3ec4455b9e09aa67023e06d,
title = "Improved device distribution in high-performance sinx resistive random access memory via arsenic ion implantation",
abstract = "Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiNx RRAM device is realized via arsenic ion (As+) implantation. Besides, the As+-implanted SiNx RRAM device exhibits much tighter cycle-to-cycle distribution than the nonimplanted device. The As+-im-planted SiNx device further exhibits excellent performance, which shows high stability and a large 1.73 × 103 resistance window at 85 °C retention for 104 s, and a large 103 resistance window after 105 cycles of the pulsed endurance test. The current–voltage characteristics of high-and low-resistance states were both analyzed as space-charge-limited conduction mechanism. From the simulated defect distribution in the SiNx layer, a microscopic model was established, and the formation and rup-ture of defect-conductive paths were proposed for the resistance switching behavior. Therefore, the reason for such high device performance can be attributed to the sufficient defects created by As+ implantation that leads to low forming and operation power.",
keywords = "Ion implantation, Neuron mimicking device, SiNx RRAM",
author = "Yen, {Te Jui} and Albert Chin and Vladimir Gritsenko",
note = "Funding Information: This research was funded by the Ministry of Science and Technology of Taiwan, project no. 107-2221-E-009-092-MY3. Publisher Copyright: {\textcopyright} 2021 by the authors. Licensee MDPI, Basel, Switzerland.",
year = "2021",
month = jun,
doi = "10.3390/nano11061401",
language = "English",
volume = "11",
journal = "Nanomaterials",
issn = "2079-4991",
publisher = "MDPI AG",
number = "6",

}

RIS

TY - JOUR

T1 - Improved device distribution in high-performance sinx resistive random access memory via arsenic ion implantation

AU - Yen, Te Jui

AU - Chin, Albert

AU - Gritsenko, Vladimir

N1 - Funding Information: This research was funded by the Ministry of Science and Technology of Taiwan, project no. 107-2221-E-009-092-MY3. Publisher Copyright: © 2021 by the authors. Licensee MDPI, Basel, Switzerland.

PY - 2021/6

Y1 - 2021/6

N2 - Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiNx RRAM device is realized via arsenic ion (As+) implantation. Besides, the As+-implanted SiNx RRAM device exhibits much tighter cycle-to-cycle distribution than the nonimplanted device. The As+-im-planted SiNx device further exhibits excellent performance, which shows high stability and a large 1.73 × 103 resistance window at 85 °C retention for 104 s, and a large 103 resistance window after 105 cycles of the pulsed endurance test. The current–voltage characteristics of high-and low-resistance states were both analyzed as space-charge-limited conduction mechanism. From the simulated defect distribution in the SiNx layer, a microscopic model was established, and the formation and rup-ture of defect-conductive paths were proposed for the resistance switching behavior. Therefore, the reason for such high device performance can be attributed to the sufficient defects created by As+ implantation that leads to low forming and operation power.

AB - Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiNx RRAM device is realized via arsenic ion (As+) implantation. Besides, the As+-implanted SiNx RRAM device exhibits much tighter cycle-to-cycle distribution than the nonimplanted device. The As+-im-planted SiNx device further exhibits excellent performance, which shows high stability and a large 1.73 × 103 resistance window at 85 °C retention for 104 s, and a large 103 resistance window after 105 cycles of the pulsed endurance test. The current–voltage characteristics of high-and low-resistance states were both analyzed as space-charge-limited conduction mechanism. From the simulated defect distribution in the SiNx layer, a microscopic model was established, and the formation and rup-ture of defect-conductive paths were proposed for the resistance switching behavior. Therefore, the reason for such high device performance can be attributed to the sufficient defects created by As+ implantation that leads to low forming and operation power.

KW - Ion implantation

KW - Neuron mimicking device

KW - SiNx RRAM

UR - http://www.scopus.com/inward/record.url?scp=85106410752&partnerID=8YFLogxK

U2 - 10.3390/nano11061401

DO - 10.3390/nano11061401

M3 - Article

C2 - 34070624

AN - SCOPUS:85106410752

VL - 11

JO - Nanomaterials

JF - Nanomaterials

SN - 2079-4991

IS - 6

M1 - 1401

ER -

ID: 34033966