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High-Power Microwave Photodiodes Based on MBE-Grown InAlAs/InGaAs Heterostructures. / Zhuravlev, K. S.; Gilinskii, A. M.; Chistokhin, I. B. et al.

In: Technical Physics, Vol. 66, No. 9, 34, 09.2021, p. 1072-1077.

Research output: Contribution to journal › Article › peer-review

Harvard

Zhuravlev, KS, Gilinskii, AM, Chistokhin, IB, Valisheva, NA, Dmitriev, DV, Toropov, AI, Aksenov, MS, Chizh, AL & Mikitchuk, KB 2021, 'High-Power Microwave Photodiodes Based on MBE-Grown InAlAs/InGaAs Heterostructures', Technical Physics, vol. 66, no. 9, 34, pp. 1072-1077. https://doi.org/10.1134/S1063784221070185

APA

Zhuravlev, K. S., Gilinskii, A. M., Chistokhin, I. B., Valisheva, N. A., Dmitriev, D. V., Toropov, A. I., Aksenov, M. S., Chizh, A. L., & Mikitchuk, K. B. (2021). High-Power Microwave Photodiodes Based on MBE-Grown InAlAs/InGaAs Heterostructures. Technical Physics, 66(9), 1072-1077. [34]. https://doi.org/10.1134/S1063784221070185

Vancouver

Zhuravlev KS, Gilinskii AM, Chistokhin IB, Valisheva NA, Dmitriev DV, Toropov AI et al. High-Power Microwave Photodiodes Based on MBE-Grown InAlAs/InGaAs Heterostructures. Technical Physics. 2021 Sept;66(9):1072-1077. 34. doi: 10.1134/S1063784221070185

Author

Zhuravlev, K. S. ; Gilinskii, A. M. ; Chistokhin, I. B. et al. / High-Power Microwave Photodiodes Based on MBE-Grown InAlAs/InGaAs Heterostructures. In: Technical Physics. 2021 ; Vol. 66, No. 9. pp. 1072-1077.

BibTeX

@article{a13ea30007134fa69f58fa08d14fe40f,
title = "High-Power Microwave Photodiodes Based on MBE-Grown InAlAs/InGaAs Heterostructures",
abstract = "The design and fabrication technology of high-power Schottky-barrier microwave mesa photodiodes from 10 to 40 μm in diameter back-illuminated through the substrate are described. The diodes were made on MBE-grown InAlAs/InGaAs/InP heterostructures. The operating frequency of photodiodes 10 μm in diameter has been found to be 40 GHz, and the maximal microwave output at 20 GHz for photodiodes 15 μm in diameter have been found to reach 58 mW. The coefficient of amplitude-to-phase conversion has been determined to be 1.5 rad/W. This value outperforms the available literature data and makes the given design of photodiodes promising for systems of analog microwave signal generation and transmission, which are very sensitive to phase noise.",
author = "Zhuravlev, {K. S.} and Gilinskii, {A. M.} and Chistokhin, {I. B.} and Valisheva, {N. A.} and Dmitriev, {D. V.} and Toropov, {A. I.} and Aksenov, {M. S.} and Chizh, {A. L.} and Mikitchuk, {K. B.}",
note = "Funding Information: This study was supported by the Russian Science Foundation (grant no. 19-72- 30023) and the Russian Foundation for Basic Research (grant no. 20-52-26013). The layout control of the structures and measurements of the low-frequency characteristics of photodiodes were performed in the Nanostructures Center for Collective Use at the Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences. Publisher Copyright: {\textcopyright} 2021, Pleiades Publishing, Ltd.",
year = "2021",
month = sep,
doi = "10.1134/S1063784221070185",
language = "English",
volume = "66",
pages = "1072--1077",
journal = "Technical Physics",
issn = "1063-7842",
publisher = "PLEIADES PUBLISHING INC",
number = "9",

}

RIS

TY - JOUR

T1 - High-Power Microwave Photodiodes Based on MBE-Grown InAlAs/InGaAs Heterostructures

AU - Zhuravlev, K. S.

AU - Gilinskii, A. M.

AU - Chistokhin, I. B.

AU - Valisheva, N. A.

AU - Dmitriev, D. V.

AU - Toropov, A. I.

AU - Aksenov, M. S.

AU - Chizh, A. L.

AU - Mikitchuk, K. B.

N1 - Funding Information: This study was supported by the Russian Science Foundation (grant no. 19-72- 30023) and the Russian Foundation for Basic Research (grant no. 20-52-26013). The layout control of the structures and measurements of the low-frequency characteristics of photodiodes were performed in the Nanostructures Center for Collective Use at the Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences. Publisher Copyright: © 2021, Pleiades Publishing, Ltd.

PY - 2021/9

Y1 - 2021/9

N2 - The design and fabrication technology of high-power Schottky-barrier microwave mesa photodiodes from 10 to 40 μm in diameter back-illuminated through the substrate are described. The diodes were made on MBE-grown InAlAs/InGaAs/InP heterostructures. The operating frequency of photodiodes 10 μm in diameter has been found to be 40 GHz, and the maximal microwave output at 20 GHz for photodiodes 15 μm in diameter have been found to reach 58 mW. The coefficient of amplitude-to-phase conversion has been determined to be 1.5 rad/W. This value outperforms the available literature data and makes the given design of photodiodes promising for systems of analog microwave signal generation and transmission, which are very sensitive to phase noise.

AB - The design and fabrication technology of high-power Schottky-barrier microwave mesa photodiodes from 10 to 40 μm in diameter back-illuminated through the substrate are described. The diodes were made on MBE-grown InAlAs/InGaAs/InP heterostructures. The operating frequency of photodiodes 10 μm in diameter has been found to be 40 GHz, and the maximal microwave output at 20 GHz for photodiodes 15 μm in diameter have been found to reach 58 mW. The coefficient of amplitude-to-phase conversion has been determined to be 1.5 rad/W. This value outperforms the available literature data and makes the given design of photodiodes promising for systems of analog microwave signal generation and transmission, which are very sensitive to phase noise.

UR - http://www.scopus.com/inward/record.url?scp=85124379939&partnerID=8YFLogxK

UR - https://elibrary.ru/item.asp?id=48149255

UR - https://www.mendeley.com/catalogue/80dfcd33-6687-3d25-9a22-d3828801d1db/

U2 - 10.1134/S1063784221070185

DO - 10.1134/S1063784221070185

M3 - Article

AN - SCOPUS:85124379939

VL - 66

SP - 1072

EP - 1077

JO - Technical Physics

JF - Technical Physics

SN - 1063-7842

IS - 9

M1 - 34

ER -

ID: 35541624