Gold-Induced Crystallization of Thin Films of Amorphous Silicon Suboxide

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Gold-Induced Crystallization of Thin Films of Amorphous Silicon Suboxide. / Lunev, N. A.; Zamchiy, A. O.; Baranov, E. A. et al.

In: Technical Physics Letters, Vol. 47, No. 10, 10.2021, p. 726-729.

Research output: Contribution to journal › Article › peer-review

Harvard

Lunev, NA, Zamchiy, AO, Baranov, EA, Merkulova, IE, Konstantinov, VO, Korolkov, IV, Maximovskiy, EA & Volodin, VA 2021, 'Gold-Induced Crystallization of Thin Films of Amorphous Silicon Suboxide', Technical Physics Letters, vol. 47, no. 10, pp. 726-729. https://doi.org/10.1134/S1063785021070257

APA

Lunev, N. A., Zamchiy, A. O., Baranov, E. A., Merkulova, I. E., Konstantinov, V. O., Korolkov, I. V., Maximovskiy, E. A., & Volodin, V. A. (2021). Gold-Induced Crystallization of Thin Films of Amorphous Silicon Suboxide. Technical Physics Letters, 47(10), 726-729. https://doi.org/10.1134/S1063785021070257

Vancouver

Lunev NA, Zamchiy AO, Baranov EA, Merkulova IE, Konstantinov VO, Korolkov IV et al. Gold-Induced Crystallization of Thin Films of Amorphous Silicon Suboxide. Technical Physics Letters. 2021 Oct;47(10):726-729. doi: 10.1134/S1063785021070257

Author

Lunev, N. A. ; Zamchiy, A. O. ; Baranov, E. A. et al. / Gold-Induced Crystallization of Thin Films of Amorphous Silicon Suboxide. In: Technical Physics Letters. 2021 ; Vol. 47, No. 10. pp. 726-729.

BibTeX

@article{0f43b7f6e03c48aab33b62d7b8343029,

title = "Gold-Induced Crystallization of Thin Films of Amorphous Silicon Suboxide",

abstract = "Gold-induced crystallization of amorphous silicon suboxide (a-SiOx) has been used for the first time to obtain polycrystalline silicon (poly-Si). It is established that the annealing of a substrate/thin gold film/thin a-SiO0.2 film structure at 335°C leads to the formation of poly-Si in the lower layer (on the substrate), while gold diffuses to the upper layer. As the annealing temperature is increased to 370°C, the mechanism of poly-Si formation remains the same, but the rate of crystallization increases. Evidently, poly-Si formation proceeds via synthesis of gold silicides followed by their nearly complete decomposition to crystalline gold and silicon phases during 10-h annealing at 370°C.",

keywords = "gold-induced crystallization, polycrystalline silicon, Raman scattering, silicon suboxide, thin films",

author = "Lunev, {N. A.} and Zamchiy, {A. O.} and Baranov, {E. A.} and Merkulova, {I. E.} and Konstantinov, {V. O.} and Korolkov, {I. V.} and Maximovskiy, {E. A.} and Volodin, {V. A.}",

note = "Funding Information: This work was supported by the Russian Science Foundation, project no. 19-79-10143. Publisher Copyright: {\textcopyright} 2021, Pleiades Publishing, Ltd.",

year = "2021",

month = oct,

doi = "10.1134/S1063785021070257",

language = "English",

volume = "47",

pages = "726--729",

journal = "Technical Physics Letters",

issn = "1063-7850",

publisher = "PLEIADES PUBLISHING INC",

number = "10",

}

RIS

TY - JOUR

T1 - Gold-Induced Crystallization of Thin Films of Amorphous Silicon Suboxide

AU - Lunev, N. A.

AU - Zamchiy, A. O.

AU - Baranov, E. A.

AU - Merkulova, I. E.

AU - Konstantinov, V. O.

AU - Korolkov, I. V.

AU - Maximovskiy, E. A.

AU - Volodin, V. A.

PY - 2021/10

Y1 - 2021/10

N2 - Gold-induced crystallization of amorphous silicon suboxide (a-SiOx) has been used for the first time to obtain polycrystalline silicon (poly-Si). It is established that the annealing of a substrate/thin gold film/thin a-SiO0.2 film structure at 335°C leads to the formation of poly-Si in the lower layer (on the substrate), while gold diffuses to the upper layer. As the annealing temperature is increased to 370°C, the mechanism of poly-Si formation remains the same, but the rate of crystallization increases. Evidently, poly-Si formation proceeds via synthesis of gold silicides followed by their nearly complete decomposition to crystalline gold and silicon phases during 10-h annealing at 370°C.

AB - Gold-induced crystallization of amorphous silicon suboxide (a-SiOx) has been used for the first time to obtain polycrystalline silicon (poly-Si). It is established that the annealing of a substrate/thin gold film/thin a-SiO0.2 film structure at 335°C leads to the formation of poly-Si in the lower layer (on the substrate), while gold diffuses to the upper layer. As the annealing temperature is increased to 370°C, the mechanism of poly-Si formation remains the same, but the rate of crystallization increases. Evidently, poly-Si formation proceeds via synthesis of gold silicides followed by their nearly complete decomposition to crystalline gold and silicon phases during 10-h annealing at 370°C.

KW - gold-induced crystallization

KW - polycrystalline silicon

KW - Raman scattering

KW - silicon suboxide

KW - thin films

UR - http://www.scopus.com/inward/record.url?scp=85121450394&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/ebc0de02-38ab-3685-aad5-3193b14b9661/

U2 - 10.1134/S1063785021070257

DO - 10.1134/S1063785021070257

M3 - Article

AN - SCOPUS:85121450394

VL - 47

SP - 726

EP - 729

JO - Technical Physics Letters

JF - Technical Physics Letters

SN - 1063-7850

IS - 10

ER -

ID: 35029148