Formation of SnO and SnO2 phases during the annealing of SnO(x) films obtained by molecular beam epitaxy

Standard

Formation of SnO and SnO₂ phases during the annealing of SnO(x) films obtained by molecular beam epitaxy. / Nikiforov, Alexander; Timofeev, Vyacheslav; Mashanov, Vladimir et al.

In: Applied Surface Science, Vol. 512, 145735, 15.05.2020.

Research output: Contribution to journal › Article › peer-review

Harvard

Nikiforov, A, Timofeev, V, Mashanov, V, Azarov, I, Loshkarev, I, Volodin, V, Gulyaev, D, Chetyrin, I & Korolkov, I 2020, 'Formation of SnO and SnO₂ phases during the annealing of SnO(x) films obtained by molecular beam epitaxy', Applied Surface Science, vol. 512, 145735. https://doi.org/10.1016/j.apsusc.2020.145735

APA

Nikiforov, A., Timofeev, V., Mashanov, V., Azarov, I., Loshkarev, I., Volodin, V., Gulyaev, D., Chetyrin, I., & Korolkov, I. (2020). Formation of SnO and SnO₂ phases during the annealing of SnO(x) films obtained by molecular beam epitaxy. Applied Surface Science, 512, [145735]. https://doi.org/10.1016/j.apsusc.2020.145735

Vancouver

Nikiforov A, Timofeev V, Mashanov V, Azarov I, Loshkarev I, Volodin V et al. Formation of SnO and SnO₂ phases during the annealing of SnO(x) films obtained by molecular beam epitaxy. Applied Surface Science. 2020 May 15;512:145735. doi: 10.1016/j.apsusc.2020.145735

Author

Nikiforov, Alexander ; Timofeev, Vyacheslav ; Mashanov, Vladimir et al. / Formation of SnO and SnO₂ phases during the annealing of SnO(x) films obtained by molecular beam epitaxy. In: Applied Surface Science. 2020 ; Vol. 512.

BibTeX

@article{c5b7dd41e71c4c5ab6b33840de7b721c,

title = "Formation of SnO and SnO2 phases during the annealing of SnO(x) films obtained by molecular beam epitaxy",

abstract = "SnO and SnO2 films were obtained on the SiO2 surface by the molecular-beam epitaxy method. The initial films are in the polycrystalline phase. The annealing of SnO(x) films at a temperature of 300 °C resulted in the formation of the tetragonal SnO phase. Three vibration modes Eg, A1g, and B1g with the frequencies of Sn[sbnd]O bond vibrations of 113, 211 and ~360 cm−1, respectively, which correspond to the SnO phase, were first observed by the Raman spectroscopy method. The orthorhombic SnO2 films were obtained by increasing the annealing temperature to 500 °C. Based on the valence band XPS (X-ray photoelectron spectroscopy) spectrum, several features with the binding energy approximately 5 eV, 7.5 eV and 11 eV, which are the same with the valence band of SnO2, were identified. The refractive index and absorption coefficient were investigated by the spectral ellipsometry technique. The high absorption coefficients correspond to the high Sn content. The film dielectric properties were revealed at the temperature higher than 300 °C. The refractive index values lie in the range of 1.5–2.6 for the visible spectral region. The pronounced absorption edges at 2.85 eV and 3.6 eV corresponding to those of stannous oxide (SnO) and stannic oxide (SnO2) were observed. The photoluminescence (PL) from the SnO(x) films was observed at room temperature. The increase of the annealing temperature resulted in the increase of PL intensity. Such PL intensity behavior is likely due to the Sn nanoislands.",

keywords = "Absorption edge, Molecular-beam epitaxy, Morphology, Photoluminescence, Raman spectroscopy, Refractive index, Tin oxide, X-ray phase analysis, X-ray photoelectron spectroscopy, THIN-FILMS, OXIDATION, DEPOSITION, ELECTRICAL-PROPERTIES, RAMAN-SCATTERING, EVAPORATION, GROWTH, TIN, OXIDES, QUARTZ",

author = "Alexander Nikiforov and Vyacheslav Timofeev and Vladimir Mashanov and Ivan Azarov and Ivan Loshkarev and Vladimir Volodin and Dmitry Gulyaev and Igor Chetyrin and Ilya Korolkov",

year = "2020",

month = may,

day = "15",

doi = "10.1016/j.apsusc.2020.145735",

language = "English",

volume = "512",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Formation of SnO and SnO2 phases during the annealing of SnO(x) films obtained by molecular beam epitaxy

AU - Nikiforov, Alexander

AU - Timofeev, Vyacheslav

AU - Mashanov, Vladimir

AU - Azarov, Ivan

AU - Loshkarev, Ivan

AU - Volodin, Vladimir

AU - Gulyaev, Dmitry

AU - Chetyrin, Igor

AU - Korolkov, Ilya

PY - 2020/5/15

Y1 - 2020/5/15

N2 - SnO and SnO2 films were obtained on the SiO2 surface by the molecular-beam epitaxy method. The initial films are in the polycrystalline phase. The annealing of SnO(x) films at a temperature of 300 °C resulted in the formation of the tetragonal SnO phase. Three vibration modes Eg, A1g, and B1g with the frequencies of Sn[sbnd]O bond vibrations of 113, 211 and ~360 cm−1, respectively, which correspond to the SnO phase, were first observed by the Raman spectroscopy method. The orthorhombic SnO2 films were obtained by increasing the annealing temperature to 500 °C. Based on the valence band XPS (X-ray photoelectron spectroscopy) spectrum, several features with the binding energy approximately 5 eV, 7.5 eV and 11 eV, which are the same with the valence band of SnO2, were identified. The refractive index and absorption coefficient were investigated by the spectral ellipsometry technique. The high absorption coefficients correspond to the high Sn content. The film dielectric properties were revealed at the temperature higher than 300 °C. The refractive index values lie in the range of 1.5–2.6 for the visible spectral region. The pronounced absorption edges at 2.85 eV and 3.6 eV corresponding to those of stannous oxide (SnO) and stannic oxide (SnO2) were observed. The photoluminescence (PL) from the SnO(x) films was observed at room temperature. The increase of the annealing temperature resulted in the increase of PL intensity. Such PL intensity behavior is likely due to the Sn nanoislands.

AB - SnO and SnO2 films were obtained on the SiO2 surface by the molecular-beam epitaxy method. The initial films are in the polycrystalline phase. The annealing of SnO(x) films at a temperature of 300 °C resulted in the formation of the tetragonal SnO phase. Three vibration modes Eg, A1g, and B1g with the frequencies of Sn[sbnd]O bond vibrations of 113, 211 and ~360 cm−1, respectively, which correspond to the SnO phase, were first observed by the Raman spectroscopy method. The orthorhombic SnO2 films were obtained by increasing the annealing temperature to 500 °C. Based on the valence band XPS (X-ray photoelectron spectroscopy) spectrum, several features with the binding energy approximately 5 eV, 7.5 eV and 11 eV, which are the same with the valence band of SnO2, were identified. The refractive index and absorption coefficient were investigated by the spectral ellipsometry technique. The high absorption coefficients correspond to the high Sn content. The film dielectric properties were revealed at the temperature higher than 300 °C. The refractive index values lie in the range of 1.5–2.6 for the visible spectral region. The pronounced absorption edges at 2.85 eV and 3.6 eV corresponding to those of stannous oxide (SnO) and stannic oxide (SnO2) were observed. The photoluminescence (PL) from the SnO(x) films was observed at room temperature. The increase of the annealing temperature resulted in the increase of PL intensity. Such PL intensity behavior is likely due to the Sn nanoislands.

KW - Absorption edge

KW - Molecular-beam epitaxy

KW - Morphology

KW - Photoluminescence

KW - Raman spectroscopy

KW - Refractive index

KW - Tin oxide

KW - X-ray phase analysis

KW - X-ray photoelectron spectroscopy

KW - THIN-FILMS

KW - OXIDATION

KW - DEPOSITION

KW - ELECTRICAL-PROPERTIES

KW - RAMAN-SCATTERING

KW - EVAPORATION

KW - GROWTH

KW - TIN

KW - OXIDES

KW - QUARTZ

UR - http://www.scopus.com/inward/record.url?scp=85079325375&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2020.145735

DO - 10.1016/j.apsusc.2020.145735

M3 - Article

AN - SCOPUS:85079325375

VL - 512

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

M1 - 145735

ER -

ID: 23523109