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Formation of low-dimensional structures in the InSb/AlAs heterosystem. / Abramkin, D. S.; Bakarov, A. K.; Putyato, M. A. et al.

In: Semiconductors, Vol. 51, No. 9, 01.09.2017, p. 1233-1239.

Research output: Contribution to journal › Article › peer-review

Harvard

Abramkin, DS, Bakarov, AK, Putyato, MA, Emelyanov, EA, Kolotovkina, DA, Gutakovskii, AK & Shamirzaev, TS 2017, 'Formation of low-dimensional structures in the InSb/AlAs heterosystem', Semiconductors, vol. 51, no. 9, pp. 1233-1239. https://doi.org/10.1134/S1063782617090020

APA

Abramkin, D. S., Bakarov, A. K., Putyato, M. A., Emelyanov, E. A., Kolotovkina, D. A., Gutakovskii, A. K., & Shamirzaev, T. S. (2017). Formation of low-dimensional structures in the InSb/AlAs heterosystem. Semiconductors, 51(9), 1233-1239. https://doi.org/10.1134/S1063782617090020

Vancouver

Abramkin DS, Bakarov AK, Putyato MA, Emelyanov EA, Kolotovkina DA, Gutakovskii AK et al. Formation of low-dimensional structures in the InSb/AlAs heterosystem. Semiconductors. 2017 Sept 1;51(9):1233-1239. doi: 10.1134/S1063782617090020

Author

Abramkin, D. S. ; Bakarov, A. K. ; Putyato, M. A. et al. / Formation of low-dimensional structures in the InSb/AlAs heterosystem. In: Semiconductors. 2017 ; Vol. 51, No. 9. pp. 1233-1239.

BibTeX

@article{a9be4014ff5b4298aad1953f0215ce20,
title = "Formation of low-dimensional structures in the InSb/AlAs heterosystem",
abstract = "Low-dimensional quantum-well and nanoisland heterostructures formed in the InSb/AlAs system by molecular-beam epitaxy are studied by transmission electron microscopy and steady-state photoluminescence spectroscopy. The structures are grown under conditions of alternate In and Sb deposition (the socalled atomic-layer epitaxy mode) and the simultaneous deposition of materials (the traditional molecularbeam epitaxy mode). In both modes of growth, at a nominal amount of the deposited material in a single layer, large-sized (200 nm–1 μm) imperfect islands arranged on the InxAl1 – xSbyAs1–y quantum-well layer are formed. In the heterostructures grown under conditions of atomic layer epitaxy, the islands are surrounded by ring-shaped arrays of much smaller (~10 nm), coherently strained islands consisting of the InxAl1 – xSbyAs1 – y alloy as well. The composition of the alloy is defined by the intermixing of Group-V materials in the stage of InSb deposition and by the intermixing of materials because of the segregation of In and Sb atoms during overgrowth of the InSb layer by an AlAs layer.",
keywords = "MOLECULAR-BEAM EPITAXY, QUANTUM DOTS, HETEROSTRUCTURES, RELAXATION, GROWTH, NANOSTRUCTURES, TRANSITION, INXGA1-XAS, GAAS(001), STRAIN",
author = "Abramkin, {D. S.} and Bakarov, {A. K.} and Putyato, {M. A.} and Emelyanov, {E. A.} and Kolotovkina, {D. A.} and Gutakovskii, {A. K.} and Shamirzaev, {T. S.}",
note = "Publisher Copyright: {\textcopyright} 2017, Pleiades Publishing, Ltd.",
year = "2017",
month = sep,
day = "1",
doi = "10.1134/S1063782617090020",
language = "English",
volume = "51",
pages = "1233--1239",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "PLEIADES PUBLISHING INC",
number = "9",

}

RIS

TY - JOUR

T1 - Formation of low-dimensional structures in the InSb/AlAs heterosystem

AU - Abramkin, D. S.

AU - Bakarov, A. K.

AU - Putyato, M. A.

AU - Emelyanov, E. A.

AU - Kolotovkina, D. A.

AU - Gutakovskii, A. K.

AU - Shamirzaev, T. S.

N1 - Publisher Copyright: © 2017, Pleiades Publishing, Ltd.

PY - 2017/9/1

Y1 - 2017/9/1

N2 - Low-dimensional quantum-well and nanoisland heterostructures formed in the InSb/AlAs system by molecular-beam epitaxy are studied by transmission electron microscopy and steady-state photoluminescence spectroscopy. The structures are grown under conditions of alternate In and Sb deposition (the socalled atomic-layer epitaxy mode) and the simultaneous deposition of materials (the traditional molecularbeam epitaxy mode). In both modes of growth, at a nominal amount of the deposited material in a single layer, large-sized (200 nm–1 μm) imperfect islands arranged on the InxAl1 – xSbyAs1–y quantum-well layer are formed. In the heterostructures grown under conditions of atomic layer epitaxy, the islands are surrounded by ring-shaped arrays of much smaller (~10 nm), coherently strained islands consisting of the InxAl1 – xSbyAs1 – y alloy as well. The composition of the alloy is defined by the intermixing of Group-V materials in the stage of InSb deposition and by the intermixing of materials because of the segregation of In and Sb atoms during overgrowth of the InSb layer by an AlAs layer.

AB - Low-dimensional quantum-well and nanoisland heterostructures formed in the InSb/AlAs system by molecular-beam epitaxy are studied by transmission electron microscopy and steady-state photoluminescence spectroscopy. The structures are grown under conditions of alternate In and Sb deposition (the socalled atomic-layer epitaxy mode) and the simultaneous deposition of materials (the traditional molecularbeam epitaxy mode). In both modes of growth, at a nominal amount of the deposited material in a single layer, large-sized (200 nm–1 μm) imperfect islands arranged on the InxAl1 – xSbyAs1–y quantum-well layer are formed. In the heterostructures grown under conditions of atomic layer epitaxy, the islands are surrounded by ring-shaped arrays of much smaller (~10 nm), coherently strained islands consisting of the InxAl1 – xSbyAs1 – y alloy as well. The composition of the alloy is defined by the intermixing of Group-V materials in the stage of InSb deposition and by the intermixing of materials because of the segregation of In and Sb atoms during overgrowth of the InSb layer by an AlAs layer.

KW - MOLECULAR-BEAM EPITAXY

KW - QUANTUM DOTS

KW - HETEROSTRUCTURES

KW - RELAXATION

KW - GROWTH

KW - NANOSTRUCTURES

KW - TRANSITION

KW - INXGA1-XAS

KW - GAAS(001)

KW - STRAIN

UR - http://www.scopus.com/inward/record.url?scp=85028752573&partnerID=8YFLogxK

U2 - 10.1134/S1063782617090020

DO - 10.1134/S1063782617090020

M3 - Article

AN - SCOPUS:85028752573

VL - 51

SP - 1233

EP - 1239

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 9

ER -

ID: 9915449