Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Formation of low-dimensional structures in the InSb/AlAs heterosystem. / Abramkin, D. S.; Bakarov, A. K.; Putyato, M. A. и др.
в: Semiconductors, Том 51, № 9, 01.09.2017, стр. 1233-1239.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
}
TY - JOUR
T1 - Formation of low-dimensional structures in the InSb/AlAs heterosystem
AU - Abramkin, D. S.
AU - Bakarov, A. K.
AU - Putyato, M. A.
AU - Emelyanov, E. A.
AU - Kolotovkina, D. A.
AU - Gutakovskii, A. K.
AU - Shamirzaev, T. S.
N1 - Publisher Copyright: © 2017, Pleiades Publishing, Ltd.
PY - 2017/9/1
Y1 - 2017/9/1
N2 - Low-dimensional quantum-well and nanoisland heterostructures formed in the InSb/AlAs system by molecular-beam epitaxy are studied by transmission electron microscopy and steady-state photoluminescence spectroscopy. The structures are grown under conditions of alternate In and Sb deposition (the socalled atomic-layer epitaxy mode) and the simultaneous deposition of materials (the traditional molecularbeam epitaxy mode). In both modes of growth, at a nominal amount of the deposited material in a single layer, large-sized (200 nm–1 μm) imperfect islands arranged on the InxAl1 – xSbyAs1–y quantum-well layer are formed. In the heterostructures grown under conditions of atomic layer epitaxy, the islands are surrounded by ring-shaped arrays of much smaller (~10 nm), coherently strained islands consisting of the InxAl1 – xSbyAs1 – y alloy as well. The composition of the alloy is defined by the intermixing of Group-V materials in the stage of InSb deposition and by the intermixing of materials because of the segregation of In and Sb atoms during overgrowth of the InSb layer by an AlAs layer.
AB - Low-dimensional quantum-well and nanoisland heterostructures formed in the InSb/AlAs system by molecular-beam epitaxy are studied by transmission electron microscopy and steady-state photoluminescence spectroscopy. The structures are grown under conditions of alternate In and Sb deposition (the socalled atomic-layer epitaxy mode) and the simultaneous deposition of materials (the traditional molecularbeam epitaxy mode). In both modes of growth, at a nominal amount of the deposited material in a single layer, large-sized (200 nm–1 μm) imperfect islands arranged on the InxAl1 – xSbyAs1–y quantum-well layer are formed. In the heterostructures grown under conditions of atomic layer epitaxy, the islands are surrounded by ring-shaped arrays of much smaller (~10 nm), coherently strained islands consisting of the InxAl1 – xSbyAs1 – y alloy as well. The composition of the alloy is defined by the intermixing of Group-V materials in the stage of InSb deposition and by the intermixing of materials because of the segregation of In and Sb atoms during overgrowth of the InSb layer by an AlAs layer.
KW - MOLECULAR-BEAM EPITAXY
KW - QUANTUM DOTS
KW - HETEROSTRUCTURES
KW - RELAXATION
KW - GROWTH
KW - NANOSTRUCTURES
KW - TRANSITION
KW - INXGA1-XAS
KW - GAAS(001)
KW - STRAIN
UR - http://www.scopus.com/inward/record.url?scp=85028752573&partnerID=8YFLogxK
U2 - 10.1134/S1063782617090020
DO - 10.1134/S1063782617090020
M3 - Article
AN - SCOPUS:85028752573
VL - 51
SP - 1233
EP - 1239
JO - Semiconductors
JF - Semiconductors
SN - 1063-7826
IS - 9
ER -
ID: 9915449