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Femtosecond Laser Annealing of Multilayer Thin-Film Structures Based on Amorphous Germanium and Silicon. / Kolchin, A. V.; Shuleiko, D. V.; Pavlikov, A. V. et al.

In: Technical Physics Letters, Vol. 46, No. 6, 01.06.2020, p. 560-563.

Research output: Contribution to journal › Article › peer-review

Harvard

Kolchin, AV, Shuleiko, DV, Pavlikov, AV, Zabotnov, SV, Golovan, LA, Presnov, DE, Volodin, VA, Krivyakin, GK, Popov, AA & Kashkarov, PK 2020, 'Femtosecond Laser Annealing of Multilayer Thin-Film Structures Based on Amorphous Germanium and Silicon', Technical Physics Letters, vol. 46, no. 6, pp. 560-563. https://doi.org/10.1134/S1063785020060048

APA

Kolchin, A. V., Shuleiko, D. V., Pavlikov, A. V., Zabotnov, S. V., Golovan, L. A., Presnov, D. E., Volodin, V. A., Krivyakin, G. K., Popov, A. A., & Kashkarov, P. K. (2020). Femtosecond Laser Annealing of Multilayer Thin-Film Structures Based on Amorphous Germanium and Silicon. Technical Physics Letters, 46(6), 560-563. https://doi.org/10.1134/S1063785020060048

Vancouver

Kolchin AV, Shuleiko DV, Pavlikov AV, Zabotnov SV, Golovan LA, Presnov DE et al. Femtosecond Laser Annealing of Multilayer Thin-Film Structures Based on Amorphous Germanium and Silicon. Technical Physics Letters. 2020 Jun 1;46(6):560-563. doi: 10.1134/S1063785020060048

Author

Kolchin, A. V. ; Shuleiko, D. V. ; Pavlikov, A. V. et al. / Femtosecond Laser Annealing of Multilayer Thin-Film Structures Based on Amorphous Germanium and Silicon. In: Technical Physics Letters. 2020 ; Vol. 46, No. 6. pp. 560-563.

BibTeX

@article{47b8d15377d44fb395f43bd6929f29c4,
title = "Femtosecond Laser Annealing of Multilayer Thin-Film Structures Based on Amorphous Germanium and Silicon",
abstract = "The processes of femtosecond laser annealing of thin-film multilayer structures based on amorphous silicon and germanium produced by plasma-chemical deposition on a glass substrate have been studied. The formation of periodic structures on the surface of irradiated films has been detected by the scanning electron microscopy method. Analysis of Raman spectra has shown that amorphous germanium crystallizes and a mixing of germanium and silicon layers depending on the pulse energy density occurs in the absence of amorphous silicon layers crystallization as a result of exposure to femtosecond laser pulses.",
keywords = "pulsed laser annealing, Raman scattering, scanning electron microscopy, thin-film silicon and germanium structures",
author = "Kolchin, {A. V.} and Shuleiko, {D. V.} and Pavlikov, {A. V.} and Zabotnov, {S. V.} and Golovan, {L. A.} and Presnov, {D. E.} and Volodin, {V. A.} and Krivyakin, {G. K.} and Popov, {A. A.} and Kashkarov, {P. K.}",
note = "Funding Information: This work was supported by the fundamental research program of the Yaroslavl Branch of the Institute of Physics and Technology, Russian Academy of Sciences, no. 0066-2019-0003",
year = "2020",
month = jun,
day = "1",
doi = "10.1134/S1063785020060048",
language = "English",
volume = "46",
pages = "560--563",
journal = "Technical Physics Letters",
issn = "1063-7850",
publisher = "PLEIADES PUBLISHING INC",
number = "6",

}

RIS

TY - JOUR

T1 - Femtosecond Laser Annealing of Multilayer Thin-Film Structures Based on Amorphous Germanium and Silicon

AU - Kolchin, A. V.

AU - Shuleiko, D. V.

AU - Pavlikov, A. V.

AU - Zabotnov, S. V.

AU - Golovan, L. A.

AU - Presnov, D. E.

AU - Volodin, V. A.

AU - Krivyakin, G. K.

AU - Popov, A. A.

AU - Kashkarov, P. K.

N1 - Funding Information: This work was supported by the fundamental research program of the Yaroslavl Branch of the Institute of Physics and Technology, Russian Academy of Sciences, no. 0066-2019-0003

PY - 2020/6/1

Y1 - 2020/6/1

N2 - The processes of femtosecond laser annealing of thin-film multilayer structures based on amorphous silicon and germanium produced by plasma-chemical deposition on a glass substrate have been studied. The formation of periodic structures on the surface of irradiated films has been detected by the scanning electron microscopy method. Analysis of Raman spectra has shown that amorphous germanium crystallizes and a mixing of germanium and silicon layers depending on the pulse energy density occurs in the absence of amorphous silicon layers crystallization as a result of exposure to femtosecond laser pulses.

AB - The processes of femtosecond laser annealing of thin-film multilayer structures based on amorphous silicon and germanium produced by plasma-chemical deposition on a glass substrate have been studied. The formation of periodic structures on the surface of irradiated films has been detected by the scanning electron microscopy method. Analysis of Raman spectra has shown that amorphous germanium crystallizes and a mixing of germanium and silicon layers depending on the pulse energy density occurs in the absence of amorphous silicon layers crystallization as a result of exposure to femtosecond laser pulses.

KW - pulsed laser annealing

KW - Raman scattering

KW - scanning electron microscopy

KW - thin-film silicon and germanium structures

UR - http://www.scopus.com/inward/record.url?scp=85088585273&partnerID=8YFLogxK

U2 - 10.1134/S1063785020060048

DO - 10.1134/S1063785020060048

M3 - Article

AN - SCOPUS:85088585273

VL - 46

SP - 560

EP - 563

JO - Technical Physics Letters

JF - Technical Physics Letters

SN - 1063-7850

IS - 6

ER -

ID: 26145448