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Exceedingly high performance top-gate p-type sno thin film transistor with a nanometer scale channel layer

Research output: Contribution to journal › Article › peer-review

Лаборатория полупроводниковых и диэлектрических материалов ФФ

DOI

https://doi.org/10.3390/nano11010092
Final published version

Te Jui Yen
Albert Chin
Vladimir Gritsenko

Original language	English
Article number	92
Pages (from-to)	1-11
Number of pages	11
Journal	Nanomaterials
Volume	11
Issue number	1
DOIs	https://doi.org/10.3390/nano11010092
Publication status	Published - Jan 2021

Research areas

3D brain-mimicking IC, Monolithic 3D, SnO TFT, monolithic 3D

OECD FOS+WOS

ID: 27451555