TY - JOUR

T1 - Exact statistical solution for the hopping transport of trapped charge via finite Markov jump processes

AU - Pil’nik, Andrey A.

AU - Chernov, Andrey A.

AU - Islamov, Damir R.

N1 - Funding Information: This work was supported by the Russian Science Foundation (grant No. 16-19-00002). The numeric calculations were performed using the computing clusters of the Novosibirsk State University and ISP SB RAS. Publisher Copyright: © 2021, The Author(s). Copyright: Copyright 2021 Elsevier B.V., All rights reserved.

PY - 2021/5/13

Y1 - 2021/5/13

N2 - In this study, we developed a discrete theory of the charge transport in thin dielectric films by trapped electrons or holes, that is applicable both for the case of countable and a large number of traps. It was shown that Shockley–Read–Hall-like transport equations, which describe the 1D transport through dielectric layers, might incorrectly describe the charge flow through ultra-thin layers with a countable number of traps, taking into account the injection from and extraction to electrodes (contacts). A comparison with other theoretical models shows a good agreement. The developed model can be applied to one-, two- and three-dimensional systems. The model, formulated in a system of linear algebraic equations, can be implemented in the computational code using different optimized libraries. We demonstrated that analytical solutions can be found for stationary cases for any trap distribution and for the dynamics of system evolution for special cases. These solutions can be used to test the code and for studying the charge transport properties of thin dielectric films.

AB - In this study, we developed a discrete theory of the charge transport in thin dielectric films by trapped electrons or holes, that is applicable both for the case of countable and a large number of traps. It was shown that Shockley–Read–Hall-like transport equations, which describe the 1D transport through dielectric layers, might incorrectly describe the charge flow through ultra-thin layers with a countable number of traps, taking into account the injection from and extraction to electrodes (contacts). A comparison with other theoretical models shows a good agreement. The developed model can be applied to one-, two- and three-dimensional systems. The model, formulated in a system of linear algebraic equations, can be implemented in the computational code using different optimized libraries. We demonstrated that analytical solutions can be found for stationary cases for any trap distribution and for the dynamics of system evolution for special cases. These solutions can be used to test the code and for studying the charge transport properties of thin dielectric films.

UR - http://www.scopus.com/inward/record.url?scp=85105821845&partnerID=8YFLogxK

U2 - 10.1038/s41598-021-89280-7

DO - 10.1038/s41598-021-89280-7

M3 - Article

C2 - 33986313

AN - SCOPUS:85105821845

VL - 11

SP - 10163

JO - Scientific Reports

JF - Scientific Reports

SN - 2045-2322

IS - 1

M1 - 10163

ER -