Standard

Evolution of Micropits on Large Terraces of the Si(111) Surface during High-Temperature Annealing. / Petrov, A. S.; Sitnikov, S. V.; Kosolobov, S. S. et al.

In: Semiconductors, Vol. 53, No. 4, 01.04.2019, p. 434-438.

Research output: Contribution to journal › Article › peer-review

Harvard

Petrov, AS, Sitnikov, SV, Kosolobov, SS & Latyshev, AV 2019, 'Evolution of Micropits on Large Terraces of the Si(111) Surface during High-Temperature Annealing', Semiconductors, vol. 53, no. 4, pp. 434-438. https://doi.org/10.1134/S1063782619040237

APA

Petrov, A. S., Sitnikov, S. V., Kosolobov, S. S., & Latyshev, A. V. (2019). Evolution of Micropits on Large Terraces of the Si(111) Surface during High-Temperature Annealing. Semiconductors, 53(4), 434-438. https://doi.org/10.1134/S1063782619040237

Vancouver

Petrov AS, Sitnikov SV, Kosolobov SS, Latyshev AV. Evolution of Micropits on Large Terraces of the Si(111) Surface during High-Temperature Annealing. Semiconductors. 2019 Apr 1;53(4):434-438. doi: 10.1134/S1063782619040237

Author

Petrov, A. S. ; Sitnikov, S. V. ; Kosolobov, S. S. et al. / Evolution of Micropits on Large Terraces of the Si(111) Surface during High-Temperature Annealing. In: Semiconductors. 2019 ; Vol. 53, No. 4. pp. 434-438.

BibTeX

@article{2befa7dfea8e42a186c269c330476759,
title = "Evolution of Micropits on Large Terraces of the Si(111) Surface during High-Temperature Annealing",
abstract = " Abstract: The transformation of micropits on large terraces of the Si(111) surface containing no vicinal atomic steps has been investigated by in situ ultrahigh-vacuum reflection electron microscopy upon thermal annealing of the substrate in the range of 1200–1400°C. A procedure for the formation of micropits on large terraces of the Si(111) surface with the application of focused-ion-beam (Ga + ) technology has been proposed. It has been found that the micropit decay kinetics varies upon reaching the critical radius R crit , which is caused by the activation of nucleation of two-dimensional vacancy islands on the micropit bottom. A theoretical model describing variations in the lateral sizes of the micropit both before and after reaching R crit has been proposed. Based on analysis of the found temperature dependence of the nucleation frequencies of two-dimensional vacancy pits on the micropit bottom, the effective energy of nucleation of a vacancy island has been determined to be 4.1 ± 0.1 eV. ",
keywords = "ATOMIC STEPS, KINETICS, NUCLEATION, MICROSCOPY, PHASE",
author = "Petrov, {A. S.} and Sitnikov, {S. V.} and Kosolobov, {S. S.} and Latyshev, {A. V.}",
year = "2019",
month = apr,
day = "1",
doi = "10.1134/S1063782619040237",
language = "English",
volume = "53",
pages = "434--438",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "PLEIADES PUBLISHING INC",
number = "4",

}

RIS

TY - JOUR

T1 - Evolution of Micropits on Large Terraces of the Si(111) Surface during High-Temperature Annealing

AU - Petrov, A. S.

AU - Sitnikov, S. V.

AU - Kosolobov, S. S.

AU - Latyshev, A. V.

PY - 2019/4/1

Y1 - 2019/4/1

N2 - Abstract: The transformation of micropits on large terraces of the Si(111) surface containing no vicinal atomic steps has been investigated by in situ ultrahigh-vacuum reflection electron microscopy upon thermal annealing of the substrate in the range of 1200–1400°C. A procedure for the formation of micropits on large terraces of the Si(111) surface with the application of focused-ion-beam (Ga + ) technology has been proposed. It has been found that the micropit decay kinetics varies upon reaching the critical radius R crit , which is caused by the activation of nucleation of two-dimensional vacancy islands on the micropit bottom. A theoretical model describing variations in the lateral sizes of the micropit both before and after reaching R crit has been proposed. Based on analysis of the found temperature dependence of the nucleation frequencies of two-dimensional vacancy pits on the micropit bottom, the effective energy of nucleation of a vacancy island has been determined to be 4.1 ± 0.1 eV.

AB - Abstract: The transformation of micropits on large terraces of the Si(111) surface containing no vicinal atomic steps has been investigated by in situ ultrahigh-vacuum reflection electron microscopy upon thermal annealing of the substrate in the range of 1200–1400°C. A procedure for the formation of micropits on large terraces of the Si(111) surface with the application of focused-ion-beam (Ga + ) technology has been proposed. It has been found that the micropit decay kinetics varies upon reaching the critical radius R crit , which is caused by the activation of nucleation of two-dimensional vacancy islands on the micropit bottom. A theoretical model describing variations in the lateral sizes of the micropit both before and after reaching R crit has been proposed. Based on analysis of the found temperature dependence of the nucleation frequencies of two-dimensional vacancy pits on the micropit bottom, the effective energy of nucleation of a vacancy island has been determined to be 4.1 ± 0.1 eV.

KW - ATOMIC STEPS

KW - KINETICS

KW - NUCLEATION

KW - MICROSCOPY

KW - PHASE

UR - http://www.scopus.com/inward/record.url?scp=85065433719&partnerID=8YFLogxK

U2 - 10.1134/S1063782619040237

DO - 10.1134/S1063782619040237

M3 - Article

AN - SCOPUS:85065433719

VL - 53

SP - 434

EP - 438

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 4

ER -

ID: 20163340