TY - JOUR

T1 - Evolution of Micropits on Large Terraces of the Si(111) Surface during High-Temperature Annealing

AU - Petrov, A. S.

AU - Sitnikov, S. V.

AU - Kosolobov, S. S.

AU - Latyshev, A. V.

PY - 2019/4/1

Y1 - 2019/4/1

N2 - Abstract: The transformation of micropits on large terraces of the Si(111) surface containing no vicinal atomic steps has been investigated by in situ ultrahigh-vacuum reflection electron microscopy upon thermal annealing of the substrate in the range of 1200–1400°C. A procedure for the formation of micropits on large terraces of the Si(111) surface with the application of focused-ion-beam (Ga + ) technology has been proposed. It has been found that the micropit decay kinetics varies upon reaching the critical radius R crit , which is caused by the activation of nucleation of two-dimensional vacancy islands on the micropit bottom. A theoretical model describing variations in the lateral sizes of the micropit both before and after reaching R crit has been proposed. Based on analysis of the found temperature dependence of the nucleation frequencies of two-dimensional vacancy pits on the micropit bottom, the effective energy of nucleation of a vacancy island has been determined to be 4.1 ± 0.1 eV.

AB - Abstract: The transformation of micropits on large terraces of the Si(111) surface containing no vicinal atomic steps has been investigated by in situ ultrahigh-vacuum reflection electron microscopy upon thermal annealing of the substrate in the range of 1200–1400°C. A procedure for the formation of micropits on large terraces of the Si(111) surface with the application of focused-ion-beam (Ga + ) technology has been proposed. It has been found that the micropit decay kinetics varies upon reaching the critical radius R crit , which is caused by the activation of nucleation of two-dimensional vacancy islands on the micropit bottom. A theoretical model describing variations in the lateral sizes of the micropit both before and after reaching R crit has been proposed. Based on analysis of the found temperature dependence of the nucleation frequencies of two-dimensional vacancy pits on the micropit bottom, the effective energy of nucleation of a vacancy island has been determined to be 4.1 ± 0.1 eV.

KW - ATOMIC STEPS

KW - KINETICS

KW - NUCLEATION

KW - MICROSCOPY

KW - PHASE

UR - http://www.scopus.com/inward/record.url?scp=85065433719&partnerID=8YFLogxK

U2 - 10.1134/S1063782619040237

DO - 10.1134/S1063782619040237

M3 - Article

AN - SCOPUS:85065433719

VL - 53

SP - 434

EP - 438

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 4

ER -