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Etching of step-bunched Si(1 1 1) surface by Se molecular beam observed by in situ REM. / Rogilo, D. I.; Fedina, L. I.; Ponomarev, S. A. et al.

In: Journal of Crystal Growth, Vol. 529, 125273, 01.01.2020.

Research output: Contribution to journal › Article › peer-review

Harvard

Rogilo, DI, Fedina, LI, Ponomarev, SA, Sheglov, DV & Latyshev, AV 2020, 'Etching of step-bunched Si(1 1 1) surface by Se molecular beam observed by in situ REM', Journal of Crystal Growth, vol. 529, 125273. https://doi.org/10.1016/j.jcrysgro.2019.125273

APA

Rogilo, D. I., Fedina, L. I., Ponomarev, S. A., Sheglov, D. V., & Latyshev, A. V. (2020). Etching of step-bunched Si(1 1 1) surface by Se molecular beam observed by in situ REM. Journal of Crystal Growth, 529, [125273]. https://doi.org/10.1016/j.jcrysgro.2019.125273

Vancouver

Rogilo DI, Fedina LI, Ponomarev SA, Sheglov DV, Latyshev AV. Etching of step-bunched Si(1 1 1) surface by Se molecular beam observed by in situ REM. Journal of Crystal Growth. 2020 Jan 1;529:125273. doi: 10.1016/j.jcrysgro.2019.125273

Author

Rogilo, D. I. ; Fedina, L. I. ; Ponomarev, S. A. et al. / Etching of step-bunched Si(1 1 1) surface by Se molecular beam observed by in situ REM. In: Journal of Crystal Growth. 2020 ; Vol. 529.

BibTeX

@article{63cfca76e5404e7289f78b41695f2d23,
title = "Etching of step-bunched Si(1 1 1) surface by Se molecular beam observed by in situ REM",
abstract = "Using in situ ultrahigh vacuum reflection electron microscopy, we have first visualized the evolution of step-bunched Si(1 1 1) surface during Se beam etching depending on substrate temperature T and terrace size required for survival of etching-induced vacancies. Below T ~ 630 °C, the etching proceeds in layer-by-layer mode via periodic nucleation of small 2D vacancy islands without noticeable motion of steps. However, in 630–830 °C interval, the etching of the 7 × 7 reconstructed Si(1 1 1) step-bunched surface is realized by both step flow and continuous nucleation and growth of 2D vacancy islands on wide terraces, which leads to the excavation of initially flat surface between step bunches. At T > 830 °C, the etching proceeds by step flow with preservation of initial surface morphology. We have found that the Si(1 1 1) surface etching by Se beam is characterized by 2.65 eV activation energy that limits etching kinetics in low-temperature range when the whole Si(1 1 1) surface is converted to disordered impurity-induced Si(1 1 1)“1 × 1”-Se phase.",
keywords = "A1. Etching, A1. Surface processes, A1. Surface structure, B1. Chalcogenes, B2. Semiconducting silicon, GROWTH, Chalcogenes, Semiconducting silicon, Etching, Surface processes, Surface structure",
author = "Rogilo, {D. I.} and Fedina, {L. I.} and Ponomarev, {S. A.} and Sheglov, {D. V.} and Latyshev, {A. V.}",
year = "2020",
month = jan,
day = "1",
doi = "10.1016/j.jcrysgro.2019.125273",
language = "English",
volume = "529",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Etching of step-bunched Si(1 1 1) surface by Se molecular beam observed by in situ REM

AU - Rogilo, D. I.

AU - Fedina, L. I.

AU - Ponomarev, S. A.

AU - Sheglov, D. V.

AU - Latyshev, A. V.

PY - 2020/1/1

Y1 - 2020/1/1

N2 - Using in situ ultrahigh vacuum reflection electron microscopy, we have first visualized the evolution of step-bunched Si(1 1 1) surface during Se beam etching depending on substrate temperature T and terrace size required for survival of etching-induced vacancies. Below T ~ 630 °C, the etching proceeds in layer-by-layer mode via periodic nucleation of small 2D vacancy islands without noticeable motion of steps. However, in 630–830 °C interval, the etching of the 7 × 7 reconstructed Si(1 1 1) step-bunched surface is realized by both step flow and continuous nucleation and growth of 2D vacancy islands on wide terraces, which leads to the excavation of initially flat surface between step bunches. At T > 830 °C, the etching proceeds by step flow with preservation of initial surface morphology. We have found that the Si(1 1 1) surface etching by Se beam is characterized by 2.65 eV activation energy that limits etching kinetics in low-temperature range when the whole Si(1 1 1) surface is converted to disordered impurity-induced Si(1 1 1)“1 × 1”-Se phase.

AB - Using in situ ultrahigh vacuum reflection electron microscopy, we have first visualized the evolution of step-bunched Si(1 1 1) surface during Se beam etching depending on substrate temperature T and terrace size required for survival of etching-induced vacancies. Below T ~ 630 °C, the etching proceeds in layer-by-layer mode via periodic nucleation of small 2D vacancy islands without noticeable motion of steps. However, in 630–830 °C interval, the etching of the 7 × 7 reconstructed Si(1 1 1) step-bunched surface is realized by both step flow and continuous nucleation and growth of 2D vacancy islands on wide terraces, which leads to the excavation of initially flat surface between step bunches. At T > 830 °C, the etching proceeds by step flow with preservation of initial surface morphology. We have found that the Si(1 1 1) surface etching by Se beam is characterized by 2.65 eV activation energy that limits etching kinetics in low-temperature range when the whole Si(1 1 1) surface is converted to disordered impurity-induced Si(1 1 1)“1 × 1”-Se phase.

KW - A1. Etching

KW - A1. Surface processes

KW - A1. Surface structure

KW - B1. Chalcogenes

KW - B2. Semiconducting silicon

KW - GROWTH

KW - Chalcogenes

KW - Semiconducting silicon

KW - Etching

KW - Surface processes

KW - Surface structure

UR - http://www.scopus.com/inward/record.url?scp=85073551397&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2019.125273

DO - 10.1016/j.jcrysgro.2019.125273

M3 - Article

AN - SCOPUS:85073551397

VL - 529

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

M1 - 125273

ER -

ID: 21936058