Research output: Contribution to journal › Article › peer-review
Etching Kinetics of Si(111) Surface by Selenium Molecular Beam. / Ponomarev, S. A.; Rogilo, D. I.; Petrov, A. S. et al.
In: Optoelectronics, Instrumentation and Data Processing, Vol. 56, No. 5, 09.2020, p. 449-455.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Etching Kinetics of Si(111) Surface by Selenium Molecular Beam
AU - Ponomarev, S. A.
AU - Rogilo, D. I.
AU - Petrov, A. S.
AU - Sheglov, D. V.
AU - Latyshev, A. V.
N1 - Funding Information: This work was supported by the Russian Science Foundation, project no. 18-72-10063. Publisher Copyright: © 2020, Allerton Press, Inc. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.
PY - 2020/9
Y1 - 2020/9
N2 - Using in situ ultrahigh vacuum reflection electron microscopy, three modes of the etching kinetics of the Si(111) surface with a selenium molecular beam are revealed. In the low temperature region ((Formula presented.) depending on the Se deposition rate), the etching kinetics is limited by the energy of formation and desorption of SiSe2 molecules and the surface is completely covered by an impurity-induced silicon selenide phase ‘‘1×1’’-Se. In the temperature range ~700-1100°C the etching rate is limited by the amount of Se deposition flow and does not depend on the temperature, surface structure, and etching mechanism (step-layer or two dimensional-island). At high temperatures ((Formula presented.), the sublimation of Si atoms begins to make the main contribution to the silicon flux from the surface. A theoretical model describing the temperature and kinetics of transitions between etching modes is formulated.
AB - Using in situ ultrahigh vacuum reflection electron microscopy, three modes of the etching kinetics of the Si(111) surface with a selenium molecular beam are revealed. In the low temperature region ((Formula presented.) depending on the Se deposition rate), the etching kinetics is limited by the energy of formation and desorption of SiSe2 molecules and the surface is completely covered by an impurity-induced silicon selenide phase ‘‘1×1’’-Se. In the temperature range ~700-1100°C the etching rate is limited by the amount of Se deposition flow and does not depend on the temperature, surface structure, and etching mechanism (step-layer or two dimensional-island). At high temperatures ((Formula presented.), the sublimation of Si atoms begins to make the main contribution to the silicon flux from the surface. A theoretical model describing the temperature and kinetics of transitions between etching modes is formulated.
KW - etching
KW - reflection electron microscopy
KW - selenium
KW - silicon
KW - sublimation
KW - surface
UR - http://www.scopus.com/inward/record.url?scp=85102740746&partnerID=8YFLogxK
U2 - 10.3103/S8756699020050088
DO - 10.3103/S8756699020050088
M3 - Article
AN - SCOPUS:85102740746
VL - 56
SP - 449
EP - 455
JO - Optoelectronics, Instrumentation and Data Processing
JF - Optoelectronics, Instrumentation and Data Processing
SN - 8756-6990
IS - 5
ER -
ID: 28133620