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Etching Kinetics of Si(111) Surface by Selenium Molecular Beam. / Ponomarev, S. A.; Rogilo, D. I.; Petrov, A. S. и др.

в: Optoelectronics, Instrumentation and Data Processing, Том 56, № 5, 09.2020, стр. 449-455.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Ponomarev, SA, Rogilo, DI, Petrov, AS, Sheglov, DV & Latyshev, AV 2020, 'Etching Kinetics of Si(111) Surface by Selenium Molecular Beam', Optoelectronics, Instrumentation and Data Processing, Том. 56, № 5, стр. 449-455. https://doi.org/10.3103/S8756699020050088

APA

Ponomarev, S. A., Rogilo, D. I., Petrov, A. S., Sheglov, D. V., & Latyshev, A. V. (2020). Etching Kinetics of Si(111) Surface by Selenium Molecular Beam. Optoelectronics, Instrumentation and Data Processing, 56(5), 449-455. https://doi.org/10.3103/S8756699020050088

Vancouver

Ponomarev SA, Rogilo DI, Petrov AS, Sheglov DV, Latyshev AV. Etching Kinetics of Si(111) Surface by Selenium Molecular Beam. Optoelectronics, Instrumentation and Data Processing. 2020 сент.;56(5):449-455. doi: 10.3103/S8756699020050088

Author

Ponomarev, S. A. ; Rogilo, D. I. ; Petrov, A. S. и др. / Etching Kinetics of Si(111) Surface by Selenium Molecular Beam. в: Optoelectronics, Instrumentation and Data Processing. 2020 ; Том 56, № 5. стр. 449-455.

BibTeX

@article{dfb627eebdfc46e08c8761c388d0b649,
title = "Etching Kinetics of Si(111) Surface by Selenium Molecular Beam",
abstract = "Using in situ ultrahigh vacuum reflection electron microscopy, three modes of the etching kinetics of the Si(111) surface with a selenium molecular beam are revealed. In the low temperature region ((Formula presented.) depending on the Se deposition rate), the etching kinetics is limited by the energy of formation and desorption of SiSe2 molecules and the surface is completely covered by an impurity-induced silicon selenide phase {\textquoteleft}{\textquoteleft}1×1{\textquoteright}{\textquoteright}-Se. In the temperature range ~700-1100°C the etching rate is limited by the amount of Se deposition flow and does not depend on the temperature, surface structure, and etching mechanism (step-layer or two dimensional-island). At high temperatures ((Formula presented.), the sublimation of Si atoms begins to make the main contribution to the silicon flux from the surface. A theoretical model describing the temperature and kinetics of transitions between etching modes is formulated.",
keywords = "etching, reflection electron microscopy, selenium, silicon, sublimation, surface",
author = "Ponomarev, {S. A.} and Rogilo, {D. I.} and Petrov, {A. S.} and Sheglov, {D. V.} and Latyshev, {A. V.}",
note = "Funding Information: This work was supported by the Russian Science Foundation, project no. 18-72-10063. Publisher Copyright: {\textcopyright} 2020, Allerton Press, Inc. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.",
year = "2020",
month = sep,
doi = "10.3103/S8756699020050088",
language = "English",
volume = "56",
pages = "449--455",
journal = "Optoelectronics, Instrumentation and Data Processing",
issn = "8756-6990",
publisher = "Allerton Press Inc.",
number = "5",

}

RIS

TY - JOUR

T1 - Etching Kinetics of Si(111) Surface by Selenium Molecular Beam

AU - Ponomarev, S. A.

AU - Rogilo, D. I.

AU - Petrov, A. S.

AU - Sheglov, D. V.

AU - Latyshev, A. V.

N1 - Funding Information: This work was supported by the Russian Science Foundation, project no. 18-72-10063. Publisher Copyright: © 2020, Allerton Press, Inc. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.

PY - 2020/9

Y1 - 2020/9

N2 - Using in situ ultrahigh vacuum reflection electron microscopy, three modes of the etching kinetics of the Si(111) surface with a selenium molecular beam are revealed. In the low temperature region ((Formula presented.) depending on the Se deposition rate), the etching kinetics is limited by the energy of formation and desorption of SiSe2 molecules and the surface is completely covered by an impurity-induced silicon selenide phase ‘‘1×1’’-Se. In the temperature range ~700-1100°C the etching rate is limited by the amount of Se deposition flow and does not depend on the temperature, surface structure, and etching mechanism (step-layer or two dimensional-island). At high temperatures ((Formula presented.), the sublimation of Si atoms begins to make the main contribution to the silicon flux from the surface. A theoretical model describing the temperature and kinetics of transitions between etching modes is formulated.

AB - Using in situ ultrahigh vacuum reflection electron microscopy, three modes of the etching kinetics of the Si(111) surface with a selenium molecular beam are revealed. In the low temperature region ((Formula presented.) depending on the Se deposition rate), the etching kinetics is limited by the energy of formation and desorption of SiSe2 molecules and the surface is completely covered by an impurity-induced silicon selenide phase ‘‘1×1’’-Se. In the temperature range ~700-1100°C the etching rate is limited by the amount of Se deposition flow and does not depend on the temperature, surface structure, and etching mechanism (step-layer or two dimensional-island). At high temperatures ((Formula presented.), the sublimation of Si atoms begins to make the main contribution to the silicon flux from the surface. A theoretical model describing the temperature and kinetics of transitions between etching modes is formulated.

KW - etching

KW - reflection electron microscopy

KW - selenium

KW - silicon

KW - sublimation

KW - surface

UR - http://www.scopus.com/inward/record.url?scp=85102740746&partnerID=8YFLogxK

U2 - 10.3103/S8756699020050088

DO - 10.3103/S8756699020050088

M3 - Article

AN - SCOPUS:85102740746

VL - 56

SP - 449

EP - 455

JO - Optoelectronics, Instrumentation and Data Processing

JF - Optoelectronics, Instrumentation and Data Processing

SN - 8756-6990

IS - 5

ER -

ID: 28133620