Enhanced InAs phase formation in the In+- and As+-implanted SiO2 films covered with Si3N4 layers › Research Explorer

DOI

https://doi.org/10.1016/j.matlet.2023.134041
Final published version

Ida Tyschenko
Zhongbin Si
Vladimir Volodin
Svetlana Cherkova
Vladimir Popov

Original language	English
Article number	134041
Journal	Materials Letters
Volume	338
DOIs	https://doi.org/10.1016/j.matlet.2023.134041
Publication status	Published - 1 May 2023

OECD FOS+WOS

2.05 MATERIALS ENGINEERING
1.03 PHYSICAL SCIENCES AND ASTRONOMY
2.03 MECHANICAL ENGINEERING

Research areas

InAs, Ion implantation, Nanocrystals, Optical phonons, Photoluminescence, SiO2

ID: 49083476