Standard

Energy spectrum of charge carriers in elastically strained assemblies of Ge/Si quantum dots. / Bloshkin, A. A.; Yakimov, A. I.; Zinovieva, A. F. et al.

In: Journal of Surface Investigation, Vol. 12, No. 2, 03.2018, p. 306-316.

Research output: Contribution to journal › Article › peer-review

Harvard

Bloshkin, AA, Yakimov, AI, Zinovieva, AF, Zinoviev, VA & Dvurechenskii, AV 2018, 'Energy spectrum of charge carriers in elastically strained assemblies of Ge/Si quantum dots', Journal of Surface Investigation, vol. 12, no. 2, pp. 306-316. https://doi.org/10.1134/S1027451018020210

APA

Bloshkin, A. A., Yakimov, A. I., Zinovieva, A. F., Zinoviev, V. A., & Dvurechenskii, A. V. (2018). Energy spectrum of charge carriers in elastically strained assemblies of Ge/Si quantum dots. Journal of Surface Investigation, 12(2), 306-316. https://doi.org/10.1134/S1027451018020210

Vancouver

Bloshkin AA, Yakimov AI, Zinovieva AF, Zinoviev VA, Dvurechenskii AV. Energy spectrum of charge carriers in elastically strained assemblies of Ge/Si quantum dots. Journal of Surface Investigation. 2018 Mar;12(2):306-316. doi: 10.1134/S1027451018020210

Author

Bloshkin, A. A. ; Yakimov, A. I. ; Zinovieva, A. F. et al. / Energy spectrum of charge carriers in elastically strained assemblies of Ge/Si quantum dots. In: Journal of Surface Investigation. 2018 ; Vol. 12, No. 2. pp. 306-316.

BibTeX

@article{058ee88a60aa401ea09dc47b4428189a,
title = "Energy spectrum of charge carriers in elastically strained assemblies of Ge/Si quantum dots",
abstract = "The results of studying the energy spectrum of electrons and holes localized in second-type Ge/Si heterostructures with Ge quantum dots are presented. In such structures, holes are localized at Ge quantum dots, and electrons, in three-dimensional quantum wells, which form in Si at the Ge-Si interface because of inhomogeneous deformations that appear as a result of the difference between the Ge and Si lattice constants. It is shown that changes in the deformations in the assembly of quantum dots as a result of a variation in their spatial arrangement significantly changes the binding energy of electrons, the position of their localization at quantum dots, the binding energy and wave-function symmetry of holes at double quantum dots (artificial molecules), and the exchange interaction of electrons and holes in the exciton composition. A practically important result of the presented data is the development of approaches to increase the luminescence quantum efficiency and the absorption coefficient in assemblies of quantum dots.",
keywords = "Elastic strain, Ge/Si heterostructure, Nanocrystal, Quantum dot, TRANSISTOR, SINGLE, PHOTOLUMINESCENCE, SIMULATION, FLASH MEMORY, DEPENDENCE, nanocrystal, BAND LINEUPS, TEMPERATURE, quantum dot, CRYSTALS, elastic strain, ELECTRONIC-STRUCTURE",
author = "Bloshkin, {A. A.} and Yakimov, {A. I.} and Zinovieva, {A. F.} and Zinoviev, {V. A.} and Dvurechenskii, {A. V.}",
year = "2018",
month = mar,
doi = "10.1134/S1027451018020210",
language = "English",
volume = "12",
pages = "306--316",
journal = "Journal of Surface Investigation",
issn = "1027-4510",
publisher = "Maik Nauka Publishing / Springer SBM",
number = "2",

}

RIS

TY - JOUR

T1 - Energy spectrum of charge carriers in elastically strained assemblies of Ge/Si quantum dots

AU - Bloshkin, A. A.

AU - Yakimov, A. I.

AU - Zinovieva, A. F.

AU - Zinoviev, V. A.

AU - Dvurechenskii, A. V.

PY - 2018/3

Y1 - 2018/3

N2 - The results of studying the energy spectrum of electrons and holes localized in second-type Ge/Si heterostructures with Ge quantum dots are presented. In such structures, holes are localized at Ge quantum dots, and electrons, in three-dimensional quantum wells, which form in Si at the Ge-Si interface because of inhomogeneous deformations that appear as a result of the difference between the Ge and Si lattice constants. It is shown that changes in the deformations in the assembly of quantum dots as a result of a variation in their spatial arrangement significantly changes the binding energy of electrons, the position of their localization at quantum dots, the binding energy and wave-function symmetry of holes at double quantum dots (artificial molecules), and the exchange interaction of electrons and holes in the exciton composition. A practically important result of the presented data is the development of approaches to increase the luminescence quantum efficiency and the absorption coefficient in assemblies of quantum dots.

AB - The results of studying the energy spectrum of electrons and holes localized in second-type Ge/Si heterostructures with Ge quantum dots are presented. In such structures, holes are localized at Ge quantum dots, and electrons, in three-dimensional quantum wells, which form in Si at the Ge-Si interface because of inhomogeneous deformations that appear as a result of the difference between the Ge and Si lattice constants. It is shown that changes in the deformations in the assembly of quantum dots as a result of a variation in their spatial arrangement significantly changes the binding energy of electrons, the position of their localization at quantum dots, the binding energy and wave-function symmetry of holes at double quantum dots (artificial molecules), and the exchange interaction of electrons and holes in the exciton composition. A practically important result of the presented data is the development of approaches to increase the luminescence quantum efficiency and the absorption coefficient in assemblies of quantum dots.

KW - Elastic strain

KW - Ge/Si heterostructure

KW - Nanocrystal

KW - Quantum dot

KW - TRANSISTOR

KW - SINGLE

KW - PHOTOLUMINESCENCE

KW - SIMULATION

KW - FLASH MEMORY

KW - DEPENDENCE

KW - nanocrystal

KW - BAND LINEUPS

KW - TEMPERATURE

KW - quantum dot

KW - CRYSTALS

KW - elastic strain

KW - ELECTRONIC-STRUCTURE

UR - http://www.scopus.com/inward/record.url?scp=85063620915&partnerID=8YFLogxK

U2 - 10.1134/S1027451018020210

DO - 10.1134/S1027451018020210

M3 - Article

AN - SCOPUS:85063620915

VL - 12

SP - 306

EP - 316

JO - Journal of Surface Investigation

JF - Journal of Surface Investigation

SN - 1027-4510

IS - 2

ER -

ID: 19072462