Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Energy spectrum of charge carriers in elastically strained assemblies of Ge/Si quantum dots. / Bloshkin, A. A.; Yakimov, A. I.; Zinovieva, A. F. и др.
в: Journal of Surface Investigation, Том 12, № 2, 03.2018, стр. 306-316.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Energy spectrum of charge carriers in elastically strained assemblies of Ge/Si quantum dots
AU - Bloshkin, A. A.
AU - Yakimov, A. I.
AU - Zinovieva, A. F.
AU - Zinoviev, V. A.
AU - Dvurechenskii, A. V.
PY - 2018/3
Y1 - 2018/3
N2 - The results of studying the energy spectrum of electrons and holes localized in second-type Ge/Si heterostructures with Ge quantum dots are presented. In such structures, holes are localized at Ge quantum dots, and electrons, in three-dimensional quantum wells, which form in Si at the Ge-Si interface because of inhomogeneous deformations that appear as a result of the difference between the Ge and Si lattice constants. It is shown that changes in the deformations in the assembly of quantum dots as a result of a variation in their spatial arrangement significantly changes the binding energy of electrons, the position of their localization at quantum dots, the binding energy and wave-function symmetry of holes at double quantum dots (artificial molecules), and the exchange interaction of electrons and holes in the exciton composition. A practically important result of the presented data is the development of approaches to increase the luminescence quantum efficiency and the absorption coefficient in assemblies of quantum dots.
AB - The results of studying the energy spectrum of electrons and holes localized in second-type Ge/Si heterostructures with Ge quantum dots are presented. In such structures, holes are localized at Ge quantum dots, and electrons, in three-dimensional quantum wells, which form in Si at the Ge-Si interface because of inhomogeneous deformations that appear as a result of the difference between the Ge and Si lattice constants. It is shown that changes in the deformations in the assembly of quantum dots as a result of a variation in their spatial arrangement significantly changes the binding energy of electrons, the position of their localization at quantum dots, the binding energy and wave-function symmetry of holes at double quantum dots (artificial molecules), and the exchange interaction of electrons and holes in the exciton composition. A practically important result of the presented data is the development of approaches to increase the luminescence quantum efficiency and the absorption coefficient in assemblies of quantum dots.
KW - Elastic strain
KW - Ge/Si heterostructure
KW - Nanocrystal
KW - Quantum dot
KW - TRANSISTOR
KW - SINGLE
KW - PHOTOLUMINESCENCE
KW - SIMULATION
KW - FLASH MEMORY
KW - DEPENDENCE
KW - nanocrystal
KW - BAND LINEUPS
KW - TEMPERATURE
KW - quantum dot
KW - CRYSTALS
KW - elastic strain
KW - ELECTRONIC-STRUCTURE
UR - http://www.scopus.com/inward/record.url?scp=85063620915&partnerID=8YFLogxK
U2 - 10.1134/S1027451018020210
DO - 10.1134/S1027451018020210
M3 - Article
AN - SCOPUS:85063620915
VL - 12
SP - 306
EP - 316
JO - Journal of Surface Investigation
JF - Journal of Surface Investigation
SN - 1027-4510
IS - 2
ER -
ID: 19072462