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Ellipsometric Method of Substrate Temperature Measurement in Low-Temperature Processes of Epitaxy of InSb Layers. / Shvets, V. A.; Azarov, I. A.; Rykhlitskii, S. V. et al.

In: Optoelectronics, Instrumentation and Data Processing, Vol. 55, No. 1, 01.01.2019, p. 8-15.

Research output: Contribution to journal › Article › peer-review

Harvard

Shvets, VA, Azarov, IA, Rykhlitskii, SV & Toropov, AI 2019, 'Ellipsometric Method of Substrate Temperature Measurement in Low-Temperature Processes of Epitaxy of InSb Layers', Optoelectronics, Instrumentation and Data Processing, vol. 55, no. 1, pp. 8-15. https://doi.org/10.3103/S8756699019010023

APA

Shvets, V. A., Azarov, I. A., Rykhlitskii, S. V., & Toropov, A. I. (2019). Ellipsometric Method of Substrate Temperature Measurement in Low-Temperature Processes of Epitaxy of InSb Layers. Optoelectronics, Instrumentation and Data Processing, 55(1), 8-15. https://doi.org/10.3103/S8756699019010023

Vancouver

Shvets VA, Azarov IA, Rykhlitskii SV, Toropov AI. Ellipsometric Method of Substrate Temperature Measurement in Low-Temperature Processes of Epitaxy of InSb Layers. Optoelectronics, Instrumentation and Data Processing. 2019 Jan 1;55(1):8-15. doi: 10.3103/S8756699019010023

Author

Shvets, V. A. ; Azarov, I. A. ; Rykhlitskii, S. V. et al. / Ellipsometric Method of Substrate Temperature Measurement in Low-Temperature Processes of Epitaxy of InSb Layers. In: Optoelectronics, Instrumentation and Data Processing. 2019 ; Vol. 55, No. 1. pp. 8-15.

BibTeX

@article{c4844fc241cf434a826fc6e318ee1e6c,
title = "Ellipsometric Method of Substrate Temperature Measurement in Low-Temperature Processes of Epitaxy of InSb Layers",
abstract = " The present study is aimed at solving the problem of in situ thermometry of lowtemperature processes of molecular beam epitaxy of indium antimonide. A spectral ellipsometric method for measuring the temperature of InSb epitaxial layers is proposed. The method is based on the temperature dependence of the energy positions of the critical points. The spectra of ellipsometric parameters of the material in the temperature range from 25 to 270 °C are measured. The analysis of these spectra shows that the most temperature-sensitive parameters are the spectral positions of the peaks of the ellipsometric parameter, which are manifested near the critical points E 1 and E 1 + Δ 1 . It is found that the dependences of the peak positions on temperature in the above-mentioned temperature range are linear functions with the slope factors of 0.21 and 0.10 nm/°C, respectively. These factors determine the sensitivity of the method and ensure the temperature measurement accuracy within 2–3 °C. ",
keywords = "critical points, ellipsometry, in situ thermometry, indium antimonide, surface temperature, SURFACE, GASB, MODEL DIELECTRIC-CONSTANTS",
author = "Shvets, {V. A.} and Azarov, {I. A.} and Rykhlitskii, {S. V.} and Toropov, {A. I.}",
year = "2019",
month = jan,
day = "1",
doi = "10.3103/S8756699019010023",
language = "English",
volume = "55",
pages = "8--15",
journal = "Optoelectronics, Instrumentation and Data Processing",
issn = "8756-6990",
publisher = "Allerton Press Inc.",
number = "1",

}

RIS

TY - JOUR

T1 - Ellipsometric Method of Substrate Temperature Measurement in Low-Temperature Processes of Epitaxy of InSb Layers

AU - Shvets, V. A.

AU - Azarov, I. A.

AU - Rykhlitskii, S. V.

AU - Toropov, A. I.

PY - 2019/1/1

Y1 - 2019/1/1

N2 - The present study is aimed at solving the problem of in situ thermometry of lowtemperature processes of molecular beam epitaxy of indium antimonide. A spectral ellipsometric method for measuring the temperature of InSb epitaxial layers is proposed. The method is based on the temperature dependence of the energy positions of the critical points. The spectra of ellipsometric parameters of the material in the temperature range from 25 to 270 °C are measured. The analysis of these spectra shows that the most temperature-sensitive parameters are the spectral positions of the peaks of the ellipsometric parameter, which are manifested near the critical points E 1 and E 1 + Δ 1 . It is found that the dependences of the peak positions on temperature in the above-mentioned temperature range are linear functions with the slope factors of 0.21 and 0.10 nm/°C, respectively. These factors determine the sensitivity of the method and ensure the temperature measurement accuracy within 2–3 °C.

AB - The present study is aimed at solving the problem of in situ thermometry of lowtemperature processes of molecular beam epitaxy of indium antimonide. A spectral ellipsometric method for measuring the temperature of InSb epitaxial layers is proposed. The method is based on the temperature dependence of the energy positions of the critical points. The spectra of ellipsometric parameters of the material in the temperature range from 25 to 270 °C are measured. The analysis of these spectra shows that the most temperature-sensitive parameters are the spectral positions of the peaks of the ellipsometric parameter, which are manifested near the critical points E 1 and E 1 + Δ 1 . It is found that the dependences of the peak positions on temperature in the above-mentioned temperature range are linear functions with the slope factors of 0.21 and 0.10 nm/°C, respectively. These factors determine the sensitivity of the method and ensure the temperature measurement accuracy within 2–3 °C.

KW - critical points

KW - ellipsometry

KW - in situ thermometry

KW - indium antimonide

KW - surface temperature

KW - SURFACE

KW - GASB

KW - MODEL DIELECTRIC-CONSTANTS

UR - http://www.scopus.com/inward/record.url?scp=85064045825&partnerID=8YFLogxK

U2 - 10.3103/S8756699019010023

DO - 10.3103/S8756699019010023

M3 - Article

AN - SCOPUS:85064045825

VL - 55

SP - 8

EP - 15

JO - Optoelectronics, Instrumentation and Data Processing

JF - Optoelectronics, Instrumentation and Data Processing

SN - 8756-6990

IS - 1

ER -

ID: 19356586